• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.170-173
• /
• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• Journal of the Optical Society of Korea
• /
• v.19 no.1
• /
• pp.88-94
• /
• 2015

This paper reports the fabrication of a lenticular liquid crystal (LC) lens array with thermally tunable focus and with the function of a convertible lens type, using the surface structure of a UV-curable polymer and a twisted-nematic (TN) LC cell. The TN LC cell makes the LC lenticular lens function as a converging or diverging lens by controlling electrically the polarization of input light. Therefore, the focal lengths for both the converging and diverging lenses, which can be switched from the TN cell, can be tuned by changing the effective refractive index of the LC by Joule heating of the transparent electrode. As a result, the focal length of the lens with the E7 LC was changed continuously from 8.7 to 31.2 mm for the converging lens type and from -9.8 to -14.2 mm for the diverging lens when the temperature was increased from 25 to $56^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
• /
• v.8 no.1
• /
• pp.31-41
• /
• 1997

In order to investigate the mechanism of electrochemical hydrogenation reaction on Zr-based Laves phase hydrogen storage alloy electrodes, electrochemical charge/discharge characteristics, potentiostatic/dynamic polarizations and electrocehmical impedance spectroscopy(EIS) of Zr-Ti-Mn-Ni and Zr-Ti-Mn-Ni-M(M=Fe, Co, Al) alloys were examined. Electrochemical discharge capacities of the alloys were quite different with gas charge capacities. Therefore, it was considered that discharge capacities of the alloys depend on electrochemical kinetic factors rather then thermodynamic ones. Discharge efficiencies were increased linearly with exchange current densities. The results of potentiostatic/dynamic polarization measurements showed that electrochemical charge and discharge reaction of Zr-based Laves phase hydrogen storage alloys is controlled by charge transfer process at the electrode surface. The EIS measurements also confirmed this result.

• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.1-6
• /
• 1989

The phenomena that the electrical conductivity of rutile single crystal changes with time were investigated along the a and c crystallographic axes, at 85$0^{\circ}C$ and Po2 in the range of 1~10-18.5atm. The D.C. conductivity decreased with and saturated some value after ca. 100 hours. But the A.C. conductivity showed no time dependence in the whole Po2 range. These experimental results suggest that the time dependence of D.C. conductivity of rutile single crystal is due to space charge polarization effect; the electrode was Pt which is complete electronic conductor, while the sample was TiO2 which is mixed conductor.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.191-194
• /
• 1999

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

• ETRI Journal
• /
• v.20 no.2
• /
• pp.241-249
• /
• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.3
• /
• pp.161-164
• /
• 2002

Polycrystalline and epitaxial heterostructure films of $La_{0.5}Sr_{0.5}CoO_{3}/Pb(Nb_{0.04}Zr_{0.28}Ti_{0.68})O_{3}/La_{0.5}Sr_{0.5}CoO_{3}$ (LSCO/PNZT/LSCO) capacitors were evaluated in terms of low voltage and high speed operation in high density memory, using TiN/Pt conducting barrier combination. Structural studies for a high density ferroelectric memory process flow, which requires the integration of conducting barrier layers to connect the drain of the pass-gate transistor to the bottom electrode of the ferroelectric stack, indicate complete phase purity (i.e. fully perovskite) in both epitaxial and polycrystalline materials. The polycrystalline capacitors show lower remnant polarization and coercive voltages. However, the retention, and high-speed characteristics are similar, indicating minimal influence of crystalline quality on the ferroelectric properties.

• Journal of Power System Engineering
• /
• v.9 no.4
• /
• pp.110-117
• /
• 2005

Underwater wet arc welds were experimentally performed on 11mm thick KR-RA steel plate using six different types of flux coated electrodes of 4.0mm diameter, KSKR, KSKT, USBL, JPUW, UWEA and UWEB. From analysis of bead appearance, detachability of weld slag, spatter occurrence and arc stability, JPUW gives the best result, and UWEB is superior to KSKR and KSKT. By experimental result of hardness distribution on the weld bonds, UWEB weld has the narrowest bond structure which is probable condition to get the best mechanical properties of weld. UWEB and JPUW welds have more even hardness distribution across weld deposit and base metal. Upon polarization test to measure the respondency of corrosion, the electrode of UWEB shows the most excellent degree due to the low open circuit potential difference.

• Journal of Welding and Joining
• /
• v.19 no.3
• /
• pp.334-341
• /
• 2001

The chemical and geometric effects of weld on flow-accelerated corrosion (FAC) of SA106 Gr.C low alloy steel pipe in 3.5wt% NaCl and simulated feedwater of nuclear power plant have been investigated by using rotating cylinder electrode. Polarization test and weight loss test were conducted and compared at rotating speed of 2000rpm (3.14m/s) with the variables of chemical and geometric parameters. The results showed that the chemical effects were relatively larger than the geometric effects, and the welded parts were the local anode and preferentially corroded, which could be explained by the differences between microstructural and compositional parameters. On the other hand, under active corrosion conditions, the heat affected zone were severely corroded and microstructural effects became the important role in the whole process.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
• /
• 2005.04a
• /
• pp.249-252
• /
• 2005

저주파수에서 유전상수 측정시 100kHz 이하의 주파수 영역에서는 전극분극효과가 발생하므로 100kHz이상의 주파수에서 유전상수가 평가되어야 한다. 유전상수는 쌍극자모멘트의 수에 비례하기 때문에 흙의 유전상수는 체적함수비에 따른 선형적인 증가경향을 나타내었다. 용액에 이온성분이 존재하는 경우에는 수화작용에 의한 물분자의 배향분극 발현의 감소로 인하여 유전상수가 감소한다. 흙과 중금속 혼합시료의 경우 함수비가 큰 시료에서는 용액의 유전특성이 발현되지만, 함수비가 작은 경우에는 공간전하분극의 영향으로 유전상수가 10-20%정도 증가하는 경향을 나타내었다. 현장에서의 정확한 오염도 평가를 위해서는 토양의 함수비에 대한 평가가 반드시 수행되어야 한다.