• Korean Journal of Materials Research
• /
• v.21 no.1
• /
• pp.21-27
• /
• 2011

A nano-porous structure of tin oxide was prepared using an anodic oxidation process and the sample's electrochemical properties were evaluated for application as an anode in a rechargeable lithium battery. Microscopic images of the as-anodized sample indicated that it has a nano-porous structure with an average pore size of several tens of nanometers and a pore wall size of about 10 nanometers; the structural/compositional analyses proved that it is amorphous stannous oxide (SnO). The powder form of the as-anodized specimen was satisfactorily lithiated and delithiated as the anode in a lithium battery. Furthermore, it showed high initial reversible capacity and superior rate performance when compared to previous fabrication attempts. Its excellent electrode performance is probably due to the effective alleviation of strain arising from a cycling-induced large volume change and the short diffusion length of lithium through the nano-structured sample. To further enhance the rate performance, the attempt was made to create porous tin oxide film on copper substrate by anodizing the electrodeposited tin. Nevertheless, the full anodization of tin film on a copper substrate led to the mechanical disintegration of the anodic tin oxide, due most likely to the vigorous gas evolution and the surface oxidation of copper substrate. The adhesion of anodic tin oxide to the substrate, together with the initial reversibility and cycling stability, needs to be further improved for its application to high-power electrode materials in lithium batteries.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.191-192
• /
• 2003

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

• Korean Journal of Optics and Photonics
• /
• v.14 no.1
• /
• pp.38-43
• /
• 2003

Fabrication process of strain-induced channel waveguides in $LiNbO_3$ was developed using strain-optic effect and compressional strain due to ~1.4 $\mu\textrm{m}$ surface Mo/Pt metal film. Characterization of the channel waveguides revealed a single transverse and depth mode in both TE and TM polarizations. Measurements showed total insertion loss of 6.2 and 7.7 ㏈/cm for TM and TE polarizations. respectively. Electro-optic intensity modulators with 11 mm long electrode length and 21 $\mu\textrm{m}$ electrode gap at $\lambda$ = 1.15 ${\mu}{\textrm}{m}$have been produced in $LiNbO_3$ substrates using strain-induced channel waveguides. Modulation depth of 100% at $\pi$-radian voltage of 16.1V has been demonstrated. Also, 1$\times$2 on/off power splitters at $\lambda$ = 0.63 $\mu\textrm{m}$ have been produced using strain-induced channel waveguides. On/off voltage of $\pm$ 25V has been demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.476-480
• /
• 2003

Polyethylene used as insulating material of power cable is nonpolar and low dielectric loss polymer. But it has defects of tree generation and accumulation of space charge by an applied voltage resulting in the decreased life and performance. To solve these problems, mixed films with LLDPE and EVA that is similar to LLDPE at physical properties in case of low VA contents were made and tested due to the blend ratios of 80:20, 70:30, 60:40 and 50:50[wt%] respectively. We investigated AC electrical treeing characteristics to acquire the best mixture ratio and effect of the tip radius of needle electrode to develop excellent treeproof materials. The degree of crystallity calculated with XRD pattern is higher for pure LLDPE, 50:50 and 70:30. For DSC analysis, it is confirmed that the melting points of mixed specimens are lower than that of pure LLDPE and higher than pure EVA's. The shape of tree propagation showed that pure EVA was electrical tree shape of the branch type, pure LLDPE and blended specimens was able to confirm tree shape of the bush type. As the tip radius go up in the blend ratio 70:30 specimen, the tree inception voltage rise. Probably the reason is the relaxation of electric field in the specimen with bigger tip ratio. As the 6 specimens were applied AC 5[KV],7.5[KV],10[KV] respectively, tree growth length is far shorter in the specimen with blend ratio 70:30, 50:50 than in pure EVA and pure LLDPE specimen. Conclusively, it is confirmed that specimens of which blend ratio are 70:30 and 50:50 are good in electrical tree retardant characteristics, especially, 70:30 has lower dielectric loss than 50:50 and its mixture ratio is the best.

• Journal of Powder Materials
• /
• v.22 no.4
• /
• pp.240-246
• /
• 2015

Anodic aluminum oxide (AAO) has been widely used for the development and fabrication of nano-powder with various morphologies such as particle, wire, rod, and tube. So far, many researchers have reported about shape control and fabrication of AAO films. However, they have reported on the shape control with different diameter and length of anodic aluminum oxide mainly. We present a combined mild-hard (or hard-mild) anodization to prepare shape-controlled AAO films. Two main parameters which are combination mild-hard (or hard-mild) anodization and run-time of voltage control are applied in this work. The voltages of mild and hard anodization are respectively 40 and 80 V. Anodization was conducted on the aluminum sheet in 0.3 mole oxalic acid at $4^{\circ}C$. AAO films with morphologies of varying interpore distance, branch-shaped pore, diameter-modulated pore and long funnel-shaped pore were fabricated. Those shapes will be able to apply to fabricate novel nano-materials with potential application which is especially a support to prevent volume expansion of inserted active materials, such as metal silicon or tin powder, in lithium ion battery. The silicon powder electrode using an AAO as a support shows outstanding cycle performance as 1003 mAh/g up to 200 cycles.

• Journal of the Korean Chemical Society
• /
• v.36 no.3
• /
• pp.393-404
• /
• 1992

The response properties of continuous automated system using an enzyme reactor for determination of urea were investigated. The enzyme reactor was constructed to packed-bed form which filled with nylon-6 beads (42∼48 mesh), which immobilized urease with glutaraldehyde, in teflon tube (2 mm I.D., 20 cm length). The system was composed of the enzyme reactor, gas dialyzer, and tublar PVC-nonactin membrane ammonium ion-selective electrode as an indicator electrode in serial order. The response characteristics of this system were as follows. That is, the concentration range of linear response, slope of linear response, detection limit, and conversion percentage were $5.5{\times}10^{-6}$∼$2.4{\times}10^{-3}M$, 57.8 mV/decade, $1.5{\times}10^{-6}$, and 80.8%, respectively. The optimum buffer and life time of urease reactor were 0.01M Tris-HCl buffer solution (pH 7.0∼7.8) and 0.01M phosphate buffer solution (pH 6.9∼7.5) and about 150 days, respectively. And the urease reactor had no interferences of the other physiological materials.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.1
• /
• pp.18-26
• /
• 2001

In this paper, the resonant characteristics and modes of the film bulk acoustic wave resonator (FBAR) used in 1~2 GHz frequency region are analyzed by it's input impedance which was calculated by three dimensional finite element method formulated as eigenvalue problem using electro-mechanical wave equation and boundary condition. It was extracted that the resonant and the spurious characteristics considering the effects of electrode area and shape variation and unsymmetry of upper and lower electrode. Those effects couldn't be analyzed by on dimensional analysis, e.g. Mason equivalent model. The simulation result was confirmed by comparing with the simulation data from Mason model analysis and the measured data of the ZnO FBAR fabricated using micro-machining technique. Also, through the simulation of the area variations of FBAR, it was obtained that the optimum ratio of length and thickness is 20:1 and the minimum ratio is 5:1 to operate thickness vibration mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.450-450
• /
• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.506-508
• /
• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• ETRI Journal
• /
• v.45 no.1
• /
• pp.171-179
• /
• 2023

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.