• Title/Summary/Keyword: electro-co-deposition

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Formation and Control of Calcium Carbonate Films having Aragonite Crystal Structure by Electro-Chemical Process (전기화학적 프로세스에 의한 아라고나이트 결정구조 탄산칼슘 막의 형성 및 제어)

  • Lee, Seung-Hyo;Lee, Myeong-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.51 no.5
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    • pp.325-331
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    • 2018
  • Calcium carbonate($CaCO_3$) films were formed by an eco-friendly electro-chemical technique on steel substrates in synthesized distilled water solutions containing $NaHCO_3$, $CaCl_2$ and $MgCl_2$ with different ratio respectively. It was investigated to confirm the effect of $Mg^{2+}$ concentration by Scanning Electron Microscopy(SEM), Energy Dispersive x-ray Spectroscopy(EDS) and X-Ray Diffraction(XRD) respectively. From an experimental result, only calcite crystals were found in solution containing no $Mg^{2+}$. By increasing concentration of $Mg^{2+}$, deposition rate decreased and crystal structure was transformed form calcite to aragonite. In case of including $MgCl_2$ 300mM in synthesized solutions containing $NaHCO_3$, $CaCl_2$ 60mM, it was showed over the 90% of aragonite contents which have quite high deposition rate of aragonite. Also, it was confirmed that $Mg^{2+}$ acted as inhibitor on the films which made transforming from calcite to aragonite.

Development of Spray Thin Film Coating Method using an Air Pressure and Electrostatic Force (공압과 정전기력을 이용한 스프레이 박막 코팅 기술 개발)

  • Kim, Jung Su;Kim, Dong Soo
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.6
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    • pp.567-572
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    • 2013
  • In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

Development and Application of Anti-Corrosive Steel Using Electro-Deposition of Sea Water (2)- Evaluation of Application Rebar with Electro-Deposition Using Sea Water (해수전착 코팅을 이용한 내부식성 철근의 개발 및 적용성에 대한 연구 (2) -해수전착된 구조용 철근의 적용성 평가)

  • Kwon, Seung Jun;Lee, Sang Min;Park, Sang Soon
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.16 no.6
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    • pp.155-162
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    • 2012
  • When RC (Reinforced Concrete) structures are exposed to sea water, steel corrosion can occur and this leads a degradation of structural performance. Referring the electro-deposition system with sea water from the 1st step research, durability and structural performance are evaluated in coated steel and RC members containing it in the 2nd research. In the durability performance test, Half Cell Potential test is performed and the coated steel is evaluated to have the high resistance to corrosion, which shows only 35% of corrosion velocity in normal (bare) steel. In the structural performance test, tensile strength, adhesive strength, and flexural/shear in RC member are performed. For the electro-deposit coated steel, increasing ratios of 3.2% and 8.8% are evaluated in the test of tensile strength and adhesive strength, respectively. For the structural test in RC member, there is no big difference between RC members with coated and non-coated steel in ultimate load and failure pattern It is evaluated that the chemical compound with $CaCO_3$ and $Mg(OH)_2$ from electro-deposition causes slightly increased structural performance. The electro-deposit coated steel can be more widely applied after performance verification from several tests like fatigue, resistance to impact, and long term-submerging test.

Development and Characterization of High Temperature Superconducting Wire for Superconducting Cable System (초전도 케이블용 고온초전도 선재의 개발 및 특성평가)

  • Mean, Byoungjean;Lee, Jae-Hun;Kim, Young-Soon;Lee, Hunju;Moon, Seung-Hyun
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.151-156
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    • 2015
  • In order to improve the properties of high-temperature superconducting wire for superconducting cable system, we optimized the electro-polishing (EP), ion-beam assisted deposition (IBAD), superconducting (SC) layer, and baking (heat) treatment. The buffer layer was deposited on electro-polished substrate with RMS roughness ($R_{RMS}$) less than 5 nm. The IBAD process was carried out at $V_{beam}$: 1100 V and $V_{accel}$: 850 V that resulted in highly crystalline film of $LaMnO_3$. Chemical composition of SC layer is key to higher critical current, and we found that composition can be determined by surface color of SC layer. We adopt a proprietary contorl system based on RGB analysis of the surface and achieved critical current of 150 A/4 mm-width. The proposed baking treatment resulted in decreasing of about 10% of fraction defects.

An analysis on the impurities generated by discharge in AC plasma display panel (교류 플라즈마 표시기 방전 시 발생하는 불순물 종의 분석)

  • 김광남;김중균;양진호;황기웅;이석현
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.482-489
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    • 1999
  • AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

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Effect of the Substrate Temperature on the Characteristics of CIGS Thin Films by RF Magnetron Sputtering Using a $Cu(In_{1-x}Ga_x)Se_2$ Single Target

  • Jung, Sung-Hee;Kong, Seon-Mi;Fan, Rong;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.382-382
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    • 2012
  • CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

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The Synthesis of Diamond/WC-Co Thin Film by HE-CVD (HE-CVD법에 의한 Diamond/WC-Co 박막합성)

  • Lee, Kee-Sun;Seo, Sung-Man;Shin, Dong-Uk;Kim, Dong-Sun
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 2003.10a
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    • pp.185-189
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    • 2003
  • The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

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Effect of Sulfurization on CIGS Thin Films by RF Magnetron Sputtering Using a Cu(In1-xGax)Se2 Single Target

  • Jung, Sung Hee;Chung, Chee Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.675-675
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    • 2013
  • CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.

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Investigation of Structural and Optical Properties of III-Nitride LED grown on Patterned Substrate by MOCVD (Patterned substrate을 이용하여 MOCVD법으로 성장된 고효율 질화물 반도체의 광특성 및 구조 분석)

  • Kim, Sun-Woon;Kim, Je-Won
    • Korean Journal of Materials Research
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    • v.15 no.10
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    • pp.626-631
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    • 2005
  • GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

The Investigation of Electro-Oxidation of Methanol on Pt-Ru Electrode Surfaces by in-situ Raman Spectroscopy

  • She, Chun-Xing;Xiang, Juann;Ren, Bin;Zhong, Qi-Ling;Wang, Xiao-Cong;Tian, Zhong-Qun
    • Journal of the Korean Electrochemical Society
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    • v.5 no.4
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    • pp.221-225
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    • 2002
  • Assisted by the highly sensitive confocal microprobe Raman spectrometer and proper surface roughening procedure, the Raman investigation on the adsorption and reaction of methanol was performed on Pt-Ru electrodes with different coverages. A detailed description of the roughening process of the Pt electrodes and the underpotential deposition of the Ru was given. Reasonably good Raman signal reflecting the metal-carbon vibration and CO vibration was detected. The appearance of vibrations of the Ru oxides, together with the existence of Ru-C, Pt-C and CO bands, clearly demonstrates the participation of the bi-functional mechanism during the oxidation process of methanol on Pt-Ru electrodes. The Pt-Ru electrode was found to have a higher catalytic activity over Pt electrodes. This preliminary study shows that electrochemical Raman spectroscopy can be applied to the study of rough electrode surface.