• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.91-97
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• 2008

Polymers submitted to thermo/electrical stress suffer from ageing that can drastically affect their functional behaviour. Understanding the physico/chemical processes at play during ageing and defining transport regimes in which these mechanisms start to be critical is therefore a prime goal to prevent degradation and to develop new formulation or new materials with improved properties. It is thought that a way to define these critical regimes is to investigate under which conditions (in terms of stress parameters) light is generated in the material by electroluminescence (EL). This can happen through impact excitation/ionization involving hot carriers or upon bi-polar charge recombination (a definition that excludes light from partial discharges, which would sign an advanced stage in the degradation process). After a brief review of the EL phenomenology under DC, we introduce a numerical model of charge transport postulating a recombination controlled electroluminescence. The model output is critically evaluated with special emphasize on the comparison between simulated and experimental light emission. Finally, we comment some open questions and perspectives.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.351-352
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• 2007

Polymers submitted to thermo/electrical stress suffer from ageing that can drastically affect their functional behaviour. Understanding the physico/chemical processes at play during ageing and defining transport regimes in which these mechanisms start to be critical is therefore a prime goal to prevent degradation and to develop new formulation or new materials with improved properties. It is thought that a way to define these critical regimes is to investigate under which conditions (in terms of stress parameters) light is generated in the material by electroluminescence (EL). This can happen through impact excitation/ionization involving hot carriers or upon bi-polar charge recombination (a definition that excludes light from partial discharges, which would sign an advanced stage in the degradation process). After a brief review of the EL phenomenology under DC, we introduce a numerical model of charge transport postulating a recombination controlled electroluminescence. The model output is critically evaluated with special emphasize on the comparison between simulated and experimental light emission. Finally, we comment some open questions and perspectives.

• Advances in nano research
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• v.17 no.2
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• pp.137-147
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• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2761-2764
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• 2011

A new Ruddlesden-Popper phase $NdSr_2MnCrO_7$ has been prepared by the standard ceramic method. The powder X-ray diffraction studies suggest that the phase crystallizes with tetragonal unit cell in the space group I4/mmm. The electrical transport properties show that the phase is an electrical insulator and the electrical conduction in the phase occurs by a 3D variable range hopping mechanism. The magnetic studies suggest that the ferromagnetic interactions are dominant.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.3
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• pp.129-134
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• 2017

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

• Journal of Broadcast Engineering
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• v.21 no.3
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• pp.436-449
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• 2016

This paper compares the transport overhead of MMT (MPEG Media Transport) with that of MPEG-2 TS (Transport Stream). MPEG-2 TS is globally used in multiplexing compressed audio and video data in digital broadcast industry, including areas of DTV (Digital Television), IPTV (Internet Protocol Television), and DMB (Digital Multimedia Broadcasting). It was the early 1990s when MPEG-2 TS standard was established. After more than two decades of years since its first establishment, many parts of MPEG-2 TS turned out to be inappropriate to today's broadcast and communication environment. Given the situations, in 2014 MPEG (ISO/IEC JTC 1 SC 29/WG 11) standardized MMT as the next-generation multimedia transport standard hopefully that can replace MPEG-2 TS. In this paper, with assumptions of broadcast service scenarios we applied both MMT and MPEG-2 TS to each scenario and we calculated their transport overheads. We used a software program that counts the transport overhead, which was developed in our laboratory for this paper. And we conducted a comparative analysis based on the calculated result of transport overhead.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1018-1021
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• 2003

We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.91-95
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• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.473-477
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• 2005

A Bi-2223 tape has been developed for power applications such as a fault current limiter, a power cable and a superconducting magnetic energy storage system. In such applications, the Bi-2223 tape carries time varying transport current and in addition experiences time varying external magnetic field. It is well known that the external magnetic field not only causes magnetization loss in the Bi-2223 tape, but also drastically increases transport loss due to a so-called 'dynamic resistance' We developed an evaluation setup, which can measure transport loss in external at magnetic fields. Using this equipment, we measured the dynamic resistances for various amplitudes and frequencies of an external at magnetic field perpendicular to the face in the tape. Simultaneously we investigated the effect of an external ac field on transport loss with different experimental conditions. This paper describes test results ana discussions on correlation between the dynamic resistance and the transport loss for the Bi-2223 tape.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1855-1862
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• 2018

A reliable set of low-energy electron collision cross sections for the triethoxysilane (TRIES) molecule was derived based on the measured electron transport coefficients for a pure TRIES molecule by using an electron swarm method and a two-term approximation of the Boltzmann equation. The electron transport coefficients calculated using the derived set are in good agreement with experimental value over a wide range of E/N values (ratio of the electric field E to the neutral number density N). The present electron collision cross section set for the TRIES molecule, therefore, is the most reliable so far for plasma discharges and for materials processing using the TRIES molecule. Moreover, the electron transport coefficients for the TRIES-Ar and the $TRIES-O_2$ mixtures were also calculated and analyzed over a wide range of E/N for the first time.