• Title/Summary/Keyword: electrical transport

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Charge Transport and Electroluminescence in Insulating Polymers (절연층 폴리머의 전하 전송 및 EL 특성)

  • Choi, Yong-Sung;Ahn, Seong-Soo;Kim, Byung-Chul;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.91-97
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    • 2008
  • Polymers submitted to thermo/electrical stress suffer from ageing that can drastically affect their functional behaviour. Understanding the physico/chemical processes at play during ageing and defining transport regimes in which these mechanisms start to be critical is therefore a prime goal to prevent degradation and to develop new formulation or new materials with improved properties. It is thought that a way to define these critical regimes is to investigate under which conditions (in terms of stress parameters) light is generated in the material by electroluminescence (EL). This can happen through impact excitation/ionization involving hot carriers or upon bi-polar charge recombination (a definition that excludes light from partial discharges, which would sign an advanced stage in the degradation process). After a brief review of the EL phenomenology under DC, we introduce a numerical model of charge transport postulating a recombination controlled electroluminescence. The model output is critically evaluated with special emphasize on the comparison between simulated and experimental light emission. Finally, we comment some open questions and perspectives.

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Charge transport and electroluminescence in insulating polymers (절연물 폴리머의 전하이동과 전계발광)

  • Yun, Ju-Ho;Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.351-352
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    • 2007
  • Polymers submitted to thermo/electrical stress suffer from ageing that can drastically affect their functional behaviour. Understanding the physico/chemical processes at play during ageing and defining transport regimes in which these mechanisms start to be critical is therefore a prime goal to prevent degradation and to develop new formulation or new materials with improved properties. It is thought that a way to define these critical regimes is to investigate under which conditions (in terms of stress parameters) light is generated in the material by electroluminescence (EL). This can happen through impact excitation/ionization involving hot carriers or upon bi-polar charge recombination (a definition that excludes light from partial discharges, which would sign an advanced stage in the degradation process). After a brief review of the EL phenomenology under DC, we introduce a numerical model of charge transport postulating a recombination controlled electroluminescence. The model output is critically evaluated with special emphasize on the comparison between simulated and experimental light emission. Finally, we comment some open questions and perspectives.

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Synthesis and Characterization of Intergrowth Type Perovskite Oxide NdSr2MnCrO7

  • Singh, Devinder
    • Bulletin of the Korean Chemical Society
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    • v.32 no.8
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    • pp.2761-2764
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    • 2011
  • A new Ruddlesden-Popper phase $NdSr_2MnCrO_7$ has been prepared by the standard ceramic method. The powder X-ray diffraction studies suggest that the phase crystallizes with tetragonal unit cell in the space group I4/mmm. The electrical transport properties show that the phase is an electrical insulator and the electrical conduction in the phase occurs by a 3D variable range hopping mechanism. The magnetic studies suggest that the ferromagnetic interactions are dominant.

Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting (전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석)

  • Lee, Su-Ho;Kim, Young-Mun;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.66 no.3
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    • pp.129-134
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    • 2017
  • We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

An Overhead Comparison of MMT and MPEG-2 TS in Broadcast Services (방송 서비스에서 MMT와 MPEG-2 TS의 오버헤드 비교)

  • Park, MinKyu;Kim, Yong Han
    • Journal of Broadcast Engineering
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    • v.21 no.3
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    • pp.436-449
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    • 2016
  • This paper compares the transport overhead of MMT (MPEG Media Transport) with that of MPEG-2 TS (Transport Stream). MPEG-2 TS is globally used in multiplexing compressed audio and video data in digital broadcast industry, including areas of DTV (Digital Television), IPTV (Internet Protocol Television), and DMB (Digital Multimedia Broadcasting). It was the early 1990s when MPEG-2 TS standard was established. After more than two decades of years since its first establishment, many parts of MPEG-2 TS turned out to be inappropriate to today's broadcast and communication environment. Given the situations, in 2014 MPEG (ISO/IEC JTC 1 SC 29/WG 11) standardized MMT as the next-generation multimedia transport standard hopefully that can replace MPEG-2 TS. In this paper, with assumptions of broadcast service scenarios we applied both MMT and MPEG-2 TS to each scenario and we calculated their transport overheads. We used a software program that counts the transport overhead, which was developed in our laboratory for this paper. And we conducted a comparative analysis based on the calculated result of transport overhead.

The Electro-optical Properties of Multilayer EL Devices with P3HT as Emitting layer (P3HT를 이용한 다층막 전계발광 소자의 전기-광학적 특성)

  • Kim, Dae-Jung;Kim, Ju-Seung;Kim, Jeong-Ho;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1018-1021
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    • 2003
  • We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

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Development of Blue Fluorescent Light Hole Transport Layer of Thiophene Base (싸이오펜 기반 청색 인광용 정공수송층 개발)

  • Ki, Hyun-Chul;Shin, Hyeon Oh;Hwang, Eun Hye;Kwon, Tae-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.2
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    • pp.91-95
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    • 2017
  • We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

Effect of an External AC Magnetic field on Dynamic Resistance and Loss Characteristic in a Bi-2223 Tape (외부 교류자장이 Bi-2223테이프의 동저항 및 손실특성에 미치는 영향)

  • Ryu, Kyung-Woo;Choi, Byoung-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.473-477
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    • 2005
  • A Bi-2223 tape has been developed for power applications such as a fault current limiter, a power cable and a superconducting magnetic energy storage system. In such applications, the Bi-2223 tape carries time varying transport current and in addition experiences time varying external magnetic field. It is well known that the external magnetic field not only causes magnetization loss in the Bi-2223 tape, but also drastically increases transport loss due to a so-called 'dynamic resistance' We developed an evaluation setup, which can measure transport loss in external at magnetic fields. Using this equipment, we measured the dynamic resistances for various amplitudes and frequencies of an external at magnetic field perpendicular to the face in the tape. Simultaneously we investigated the effect of an external ac field on transport loss with different experimental conditions. This paper describes test results ana discussions on correlation between the dynamic resistance and the transport loss for the Bi-2223 tape.

Electron Collision Cross Sections for the TRIES Molecule and Electron Transport Coefficients in TRIES-Ar and TRIES-O2 Mixtures

  • Tuoi, Phan Thi;Tuan, Do Anh;Hien, Pham Xuan
    • Journal of the Korean Physical Society
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    • v.73 no.12
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    • pp.1855-1862
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    • 2018
  • A reliable set of low-energy electron collision cross sections for the triethoxysilane (TRIES) molecule was derived based on the measured electron transport coefficients for a pure TRIES molecule by using an electron swarm method and a two-term approximation of the Boltzmann equation. The electron transport coefficients calculated using the derived set are in good agreement with experimental value over a wide range of E/N values (ratio of the electric field E to the neutral number density N). The present electron collision cross section set for the TRIES molecule, therefore, is the most reliable so far for plasma discharges and for materials processing using the TRIES molecule. Moreover, the electron transport coefficients for the TRIES-Ar and the $TRIES-O_2$ mixtures were also calculated and analyzed over a wide range of E/N for the first time.

The measurement of electron drift velocity and analysis of transport coefficients in SF$_6$+$N_2$ gas (SF$_6$+$N_2$혼합기체의 전자 이동속도 측정 및 수송계수 해석)

  • 하성철;하영선
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.462-472
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    • 1994
  • In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

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