• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• Journal of Powder Materials
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• v.23 no.1
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• pp.21-25
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• 2016

The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.258-263
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• 2012

Fe-diluted Si alloys grown on p-type Si (100) substrates by pulsed-laser deposition method were studied for structural, electrical, and magnetic properties. The X-ray diffraction patterns for these alloy samples showed a few of peaks with cubic structures such as FeSi, $Fe_3Si$, and $Fe_4Si$. The Fe-composition in alloys are confirmed as Fe atomic percent about 1.25~6.49 % from energy dispersive spectroscopy measurement. The resistivity as a function of the reciprocal temperature was indicated an exponential increase with two activation energies of 5.21 and 7.79 meV. The maximum value of the magnetization at 10 K was about 100 emu/cc, and the ferromagnetism was also observed until 350 K from total magnetization as a function of temperature with applied magnetic field of 3,000 Oe.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• Carbon letters
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• v.6 no.1
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• pp.41-46
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• 2005

Plasma carbon blacks of 20~30 nm diameter were synthesized by direct decomposition of natural gas using a hybrid plasma torch system with 50 kW direct current and 4 MHz of radio frequency. The insulating rector which inside diameter of 400 mm and length of 1500 mm, respectively was kept at 300~$400^{\circ}C$ during the preparation. The ultimate analysis of plasma carbon blacks reveals that the raw plasma carbon blacks contains a large quantity of volatile which is mainly consist of hydrogen. Therefore devolatilization of raw plasma carbon blacks were carried out at $900^{\circ}C$ for one hour under nitrogen atmosphere. The devolatilization leads to the decrease in electrical resistivity and surface oxygen functional groups of plasma carbon black significantly. In order to investigate the plasma carbon as a catalyst support, devolatilized plasma black at $900^{\circ}C$ (DPB) supported PtAu catalyst was synthesized by sodium boronhydride reduction method. Electrochemical measurements and direct formic acid fuel cell test indicated that catalytic activity of DPB supported PtAu catalyst for formic acid oxidation was similar to that of Vulcan XC-72 of commercial carbon black supported one.

• Journal of the Korean earth science society
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• v.26 no.5
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• pp.429-435
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• 2005

3D RMR (Rock Mass Rating) analysis has been performed by applying the Geostatistical integration technique for geophysical and borehole data. Of the various geostatistical techniques for the integrated data analysis, in this study, we applied the SKlvm (Simple Kriging with local varying means) method that substitutes the values of the interpreted geophysical result with the mean values of the RMR at the location to be inferred. The substitution is performed by the indicator transform between the result of geophysical interpretation and the observed RMR values at borehole sites. The used geophysical data are the electrical resistivity and MT result, and 10 borehole sites are investigated to obtain the RMR values. This integrated analysis makes the interpretation to be more practical for identifying the realistic RMR distribution that supports the regional geological situation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.543-547
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• 2016

Bubble properties such as size (chord length) and rising velocity were investigated in a bubble column with electrolyte solutions, of which diameter was 0.152m and 2.5m in height, respectively. The size and rising velocity of bubbles were measured by using the dual electrical resistivity probe method. Effects of gas and liquid velocities and ionic strength of liquid phase on the size and rising velocity of bubbles were determined. The bubble size increased with increasing gas velocity but decreased with increasing liquid velocity or ionic strength of liquid phase. The rising velocity of bubbles increased with increasing gas velocity and decreased with increasing ionic strength of liquid phase, however, it showed a slight maximum value with varying liquid velocity. The size and rising velocity of bubbles were well correlated with operating variables.

• The Journal of Engineering Geology
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• v.16 no.3 s.49
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• pp.255-263
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• 2006

In an electrical tomographic survey using an inclined borehole with a pole-dipole array, we must consider several factors: a singular point associated with zero potential difference, a spatial discrepancy between electrode and nodal point in a model due to a inclined borehole, and a variation of geometric factors in connection with a irregular topography. Singular points which are represented by the normal distance from current source to the ground surface can be represented by serveral regions due to a irregular topography of ground surface. The method of element division can be applied to the region in which the borehole is curved, inclined or the distance between the electrodes is shorter than that of nodal points, because the coordinate of each electrode cannot be assigned directly to the nodal point if several electrodes are in an element. Test on a three-dimensional (3-D) synthetic model produces good images of conductive target and shoves stable convergence.