• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.901-905
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• 2010

PV module has many power loss factors, and series resistance is the most important elements of them. It is therefore easy to expect the partial shading decrease the lifetime of the semiconductor depletion layer in thin film PV module. Different shading losses could be related with the hot spot which is critical in expecting the reliability issue. In this paper we have modelled the series resistance of the PV module with both different direction of the cell line and shading area of the panel. From the results, thin film a-Si PV module has shown different properties by shading direction.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.59-65
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• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1069-1071
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• 1995

The electrical properties of Al/TiN/Ti contact are investigated at submicron contacts. The contact resistance and contact leakage current are dependent on metallization, surface dopant concentration, semiconductor surface treatment and contact plug ion implantation. In this paper, the contact resistance and contact leakage current are studied according to surface dopant concentration, semiconductor surface treatment and contact plug ion implantation at 0.8 micron contact. The contact resistance and contact leakage current increases with increasing substrate ion concentration. HF cleaning represents high contact resistance but low contact leakage current while CDE cleaning represents low contact resistance but high contact leakage current. Contact plug ion implantation decreases contact resistance but increases contact leakage current. Specially, RTA represents good electrical properties.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.5-10
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• 2004

Electric contacts serve the purpose of transmitting electric signals across two conducting components. In this paper, the effects of contact conditions such as surface roughness, oxidation, and contamination were investigated with respect to electrical resistance variation of a connector in a direct current circuit. Such change in the electrical resistance is particularly important for low power circuits. The experimental results showed that compared with the effects of contact surface scratch or oxidation, the effect of contamination on the resistance variation was the most significant. In order to minimize failure due to electrical resistance change at the contact region, proper sealing to prevent contamination from entering the interface is needed.

• Carbon letters
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• v.14 no.3
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• pp.171-174
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• 2013

The high quality contact between graphene and the metal electrode is a crucial factor in achieving the high performance of graphene transistors. However, there is not sufficient research about contact resistance reduction methods to improve the junction of metal-graphene. In this paper, we propose a new method to decrease the contact resistance between graphene and metal using directly grown graphene over a metal surface. The study found that the grown graphene over copper, as an intermediate layer between the copper and the transferred graphene, reduces contact resistance, and that the adhesion strength between graphene and metal becomes stronger. The results confirmed the contact resistance of the metal-graphene of the proposed structure is nearly half that of the conventional contact structure.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.114.1-114.1
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• 2011

Electrical sintering of the front electrode for crystalline silicon solar cells was performed applying a constant DC current to the printed lines. Conducting lines were printed on glass substrate by a drop-on-demand (DOD) inkjet printer and silver nanoparticle ink. Specific resistance and microstructure of sintered silver lines and were measured with varying DC current. To find the relation between temperature increase with changing applied current and specific resistance, temperature elevation was also calculated. Sintering process finished within a few milliseconds. Increasing applied DC current, specific resistance decreased and grain size increased after sintering. Achieved minimum specific resistance is approximately 1.7 times higher than specific resistance of the bulk silver.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.135-139
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• 2002

Carbon powders (CP) and carbon fiber (CF) were introduced info glass fiber reinforced plastics (FRP) composites to obtain fracture detection function. The composites were evaluated through the relation between a load-displacement curve and an electrical resistance change curve in three point bending test. CP containing FRP (CP-FRP) has a sensitivity of electrical resistance change at much lower load level than CF containing FRP (CF-FRP). In loading-unloading tests, CP-FRP showed a large amount of residual electrical resistance which enables the estimation of loading hysteresis.

• Journal of the Korean Solar Energy Society
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• v.29 no.4
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• pp.1-6
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• 2009

This paper estimates numerically cells the electrical characteristics of the PV module with environmental changes such as shunt resistance, series resistance, temperature, irradiance. Series resistance $R_s$ including diode characteristic resistance $r_d$ is derived from the p-n junction diode model. I-V characteristics of this model with series resistance $R_s$ are simulated on Matlab. Finally, theoretical I-V characteristics are compared with those of solar simulator. Those results agreed well within the manufacturer's maximum error range 3%

• Korean Journal of Acupuncture
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• v.17 no.1
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• pp.173-177
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• 2000

We have observed the electrical resistance of every point in a $16{\times}64$ matrix that is projected to the medial side of human forearm. The electrical resistance against the 1.25V directing current was rated in discrete scale and illustrated in contour maps. The characteristics of distribution of electrical resistance and it's relations to so called Meridians were also discussed.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1663-1664
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• 2006

Carbon films was grown on Si substrates using the method of electrolysis for methanol liquid. Deposition parameters for the growth of the carbon films were current density for the electrolysis, methanol liquid temperature and electrode spacing between anode and cathode. We examined electrical resistance and the surface morphology of carbon films formed under various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes was relatively wider. We found that the electrical resistance in the films was independent of both current density and methanol liquid temperature for electrolysis. The temperature dependence of the electrical resistance in the low resistance carbon films was different from one obtained in graphite.