• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.341-350
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• 2023

The templated grain growth (TGG) method has gained significant attention for its ability to produce highly textured piezoelectric ceramics with significantly enhanced performance, making it a promising method for transducer and actuator applications. However, the texturing process using the TGG method requires the optimization of multiple steps, which can be challenging for beginners in this field. Therefore, in this tutorial, we provide an overview of the TGG method mainly based on our previous published works, including its various processing steps such as synthesizing anisotropic-shaped templates with size and size distribution control using the molten salt synthesis technique, tape casting, and identifying key factors for proper alignment of the templates in the target matrix system. Our goal is to provide a resource that can serve as a basic reference for researchers and engineers looking to improve their understanding and utilization of the TGG method for producing textured piezoelectric ceramics.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.30 no.1C
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• pp.37-44
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• 2010

Recently, urban retrofit and extension, development of new buildings and facilities, and construction of underground structures like subway tunnels in urban areas give rise to significance of site investigation at urban areas. However, ambient electric noises, traffic vibrations, embedded objects work as obstacles to high-quality and accuracy in site investigation at urban areas. In this paper, a new technique called the pseudo-DC resistivity survey (in brief, PDC-R) was proposed to minimize the adverse effect of ambient electrical noises in resistivity survey. PDC-R technique utilizes an AC current with frequency range of 0.1 to 1.0 Hz rather than DC current, which is used for conventional resistivity survey. The motivation of using low-frequency AC current is to avoid 60-Hz components or its multiples in the resistivity survey which ambient noises are mostly composed of. The implementation of PDC-R technique also included the parametric study on skin effect, frequency effect and current-level effect, which led to the determination of optimal values of frequency and current level for PDC-R survey. The reliability and feasibility of PDC-R technique was verified through field tests, accompanied by the comparison with DC resistivity survey and CapSASW tests.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.412-419
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• 2024

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.457-463
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• 2024

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNT-based piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperature-dependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest S_max/E_max value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.

• Investigative Magnetic Resonance Imaging
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• v.18 no.4
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• pp.303-313
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• 2014

Purpose : In-vivo conductivity reconstruction using transmit field ($B_1{^+}$) information of MRI was proposed. We assessed the accuracy of conductivity reconstruction in the presence of statistical noise in complex $B_1{^+}$ map and provided a parametric model of the conductivity-to-noise ratio value. Materials and Methods: The $B_1{^+}$ distribution was simulated for a cylindrical phantom model. By adding complex Gaussian noise to the simulated $B_1{^+}$ map, quantitative conductivity estimation error was evaluated. The quantitative evaluation process was repeated over several different parameters such as Larmor frequency, object radius and SNR of $B_1{^+}$ map. A parametric model for the conductivity-to-noise ratio was developed according to these various parameters. Results: According to the simulation results, conductivity estimation is more sensitive to statistical noise in $B_1{^+}$ phase than to noise in $B_1{^+}$ magnitude. The conductivity estimate of the object of interest does not depend on the external object surrounding it. The conductivity-to-noise ratio is proportional to the signal-to-noise ratio of the $B_1{^+}$ map, Larmor frequency, the conductivity value itself and the number of averaged pixels. To estimate accurate conductivity value of the targeted tissue, SNR of $B_1{^+}$ map and adequate filtering size have to be taken into account for conductivity reconstruction process. In addition, the simulation result was verified at 3T conventional MRI scanner. Conclusion: Through all these relationships, quantitative conductivity estimation error due to statistical noise in $B_1{^+}$ map is modeled. By using this model, further issues regarding filtering and reconstruction algorithms can be investigated for MREPT.

• Journal of the Korean Society for Railway
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• v.17 no.3
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• pp.157-164
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• 2014

The contact force between the pantograph and the catenary is a key factor determining the current collection quality, as they can ensure stable electrical power to the train. In this study, we analyzed the dynamic contact force for HEMU-430X depending on the train speed. It was confirmed through the results that the standard deviation of the contact force increases with an increase in the train speed. It was also verified that the span of the catenary system is a very important factor with regard to the contact force when analyzed with frequency analysis. To secure stable power in speed that exceeds 400km/h, the statistical variation of the contact force should be minimized. To realize this, the catenary tension was increased and the mass of the pan-head was decreased. The ensuing effects were then quantitatively analyzed in terms of the contact force. In addition, the differences in the contact force between a tunnel and an open field were analyzed based on a frequency analysis.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.275-280
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• 2005

The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of $175-350^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors. A self-limiting growth of $0.6\AA/cycle$ was achieved at the substrate temperature of $240-280^{\circ}C$. The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at $300^{\circ}C$ was almost stoichiometric. Electrical measurements performed on $MoW/HfO_2$(20 nm)/Si MOS structures exhibited high dielectric constant$(\~17)$ and a remarkably low leakage current density of at an applied field of $1.5-6.2\times10^{-7}A/cm^2$ MV/cm, probably due to the stoichiometry of the films.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.5
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• pp.460-470
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• 2009

In this paper, we described the implementation of the X-Band continuous-wave doppler radar for muzzle velocity measurement. The radar is consisted of microwave transceiver, signal processor, power board, and the measuring program was developed for the operating and field test. The operating frequency of doppler radar is able to set ${\pm}3\;MHz$ with 5 channel from the center frequency, and the output power is 25 dBm. The minimum receiving power is -117 dBm. The radar would obtain the doppler frequency from the artillery, and calculate accurate velocity point and then estimate muzzle velocity. The performance test for this radar was done with 155 mm at barrel and tripod mounted, and also compared the performance with the reference radar. As a result, the performance of the our new radar is equal with the reference one.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.1
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• pp.79-84
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• 2013

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor field effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. Also, the output waveform for the given input in the DC/DC converter is observed by the simulation program with integrated circuit emphasis (SPICE). TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the PWM operation is studied at SEL testing after implementation of the controller board.