• Title/Summary/Keyword: electrical double layer capacitor

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The Effect of CNT Electrode on the Charging and Discharging Characteristics of Supercapacitor (CNT를 이용한 Supercapacitor의 충.방전 특성)

  • Hur, Geun;Myoung, Seong-Jae;Lee, Yong-Hyun;Chun, Myoung-Pyo;Cho, Jeong-Ho;Kim, Byung-Ik;Shim, Kwang-Bo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.275-275
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    • 2007
  • Two sorts of electrode composed of Sulpur/CNT/PVDF and Silver/CNT/PVDF were prepared by in situ chemical method and their electrochemical performance were evaluated by using cyclic voltammetry, impedance measurement and constant-current charge/discharge cycling technique. Also, composite electrodes were characterized by FE-SEM and BET. Raw materials such as CNT/Silver and CNT/Sulfur were mixed in ethanol, dried. These mixed materials were heated at 900 and $320^{\circ}C$ for 2hr, respectively in order to enhance contact among CNT electrodes. Electric double layer capacitor cells were fabricated using these mixed powder with polymer of PVDF. For the charging and discharging characteristics measured at scan rate of 1 mA/s, Supercapacitor of Sulphur-CNT-PVDF electrode showed a better performance than that of Ag-CNT-PVDF, which seems to be related with lower contact resistance of Sulphur-CNT-PVDF electrode.

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Electrical Properties of Al2O3/SiO2 and HfAlO/SiO2 Double Layer with Various Heat Treatment Temperatures for Tunnel Barrier Engineered Memory Applications

  • Son, Jeong-U;Jeong, Hong-Bae;Lee, Yeong-Hui;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.127-127
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    • 2011
  • 전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널 산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 SiO2/Al2O3 (2/3 nm)와 SiO2/HfAlO (2/3 nm)의 이중 터널 산화막을 증착 시킨 MIS capacitor를 제작한 후 터널 산화막에 전하가 트랩되는 것을 피하기 위하여 다양한 열처리 온도에 따른 current-voltage (I-V), capacitance-voltage (C-V), constant current stress (CCS) 특성을 평가하였다. 급속열처리 공정온도는 600, 700, 800, 900 ${^{\circ}C}$에서 진행하였으며, 낮은 누설전류, 터널링 전류의 증가, 전하의 트랩현상이 최소화되는 열처리 공정의 최적화 실험을 진행하였다.

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Bottom electrode optimization for the applications of ferroelectric memory device (강유전체 기억소자 응용을 위한 하부전극 최적화 연구)

  • Jung, S.M.;Choi, Y.S.;Lim, D.G.;Park, Y.;Song, J.T.;Yi, J.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.599-604
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    • 1998
  • We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

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Intrinsic Porous Polymer-derived 3D Porous Carbon Electrodes for Electrical Double Layer Capacitor Applications (전기이중층 커패시터용 내재적 미세 다공성 고분자 기반 3차원 다공성 탄소 전극)

  • Han, Jae Hee;Suh, Dong Hack;Kim, Tae-Ho
    • Applied Chemistry for Engineering
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    • v.29 no.6
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    • pp.759-764
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    • 2018
  • 3D porous carbon electrodes (cNPIM), prepared by solution casting of a polymer of intrinsic microporosity (PIM-1) followed by nonsolvent-induced phase separation (NIPS) and carbonization are presented. In order to effectively control the pore size of 3D porous carbon structures, cNPIM was prepared by varying the THF ratio of mixed solvents. The SEM analysis revealed that cNPIMs have a unique 3D macroporous structure having a gradient pore structure, which is expected to grant a smooth and easy ion transfer capability as an electrode material. In addition, the cNPIMs presented a very large specific surface area ($2,101.1m^2/g$) with a narrow micropore size distribution (0.75 nm). Consequently, the cNPIM exhibits a high specific capacitance (304.8 F/g) and superior rate capability of 77% in an aqueous electrolyte. We believe that our approach can provide a variety of new 3D porous carbon materials for the application to an electrochemical energy storage.

The Study on Control Algorithm of Elevator EDLC Emergency Power Converter (승강기 EDLC 비상전원 전력변환장치 제어 알고리즘 연구)

  • Lee, Sang-min;Kim, IL-Song;Kim, Nam
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.7 no.6
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    • pp.709-718
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    • 2017
  • The installation of the elevator ARD(Automatic Rescue Device) system has been forced into law in these days in order to safely rescue passengers during power failure. The configuration of the ARD system consists of energy storage device, power converter and control systems. The EDLC(Electric Double Layer Capacitor) are used as energy storage device for rapid charge/discharge purposes. The power conditioning system (PCS) consists of bi-directional converter, 3-phase converter and control system. The dead-beat control system is adopted for most systems however it requires complex mathematical calculations, the high performance microprocessors are mandatory and thus it can be a cause of high manufacturing cost. In this paper the new control method for average current mode control is presented for simple structure. The control algorithm is applied to the single phase system and then expands to three phase system to meet the sysem requirements. The mathematical modeling using average modeling method is presented and analysed by PSIM computer simulation to verifie the validity of the proposed control methods.