• 대한전자공학회논문지SD
• /
• 제45권7호
• /
• pp.1-8
• /
• 2008

본 논문에서는 플라스틱 기판에 OTFT를 스위칭 소자로 사용하여 유연한 EPD 패널을 제작하였다. OTFT의 채널 폭과 길이의 비(W/L)는 EPD의 응답속도를 고려하여 15이상으로 설계를 하였다. 게이트전극은 Al, 절연층은 cross-linked PVP, 반도체층은 펜타센, 중간층은 PVA/Acryl를 사용하였다. 플라스틱 기판은 보호층 처리를 통하여 열처리 공정 시 발생하는 입자를 제거하였고, 거친 표면을 평탄화하였다. 반도체층의 크기는 게이트 전극 보다 작도록 제한하여 누설전류를 줄일 수 있었다. EPD-상판과 OTFT-하판 사이에 픽셀전극을 삽입하고 또한 OTFT-하판을 보호하기 위하여 PVA/Acryl로 구성된 중간층을 상빙하였다. 완성된 OTFT-하판에서 OTFT의 이동도는 $0.21cm^2/V.s$, 전류점멸비(Ion/Ioff)는 $10^5$ 이상의 성능을 보였다.

• 한국재료학회지
• /
• 제14권4호
• /
• pp.235-238
• /
• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

• 펄프종이기술
• /
• 제30권3호
• /
• pp.74-83
• /
• 1998

The phenomenon of decrease in sizing efficiency when the stock temperature is increased is well recognized as summer sizing, and this is believed to be caused by uneven distribution of sizing agents on paper surface most often incurred by coagulation of sizing agents. When unevenly sized paper is used as coating base stock, nonuniform consolidation of the coating layer may result, which, in turn, causes uneven distribution of binder on coating surface. This causes nonuniform ink absorption to produce print mottle. In this study the effects of simple or polymeric electrolytes, storage temperature and time on the coagulation of cationic dispersed rosin size were investigated using a turbidity measurement method which was verified to correlate well with the particle size of rosin emulsion or its coagulates. Handsheets sized with rosin dispersions coagulated under various conditions were prepared and their sizing degree and coated paper properties including gloss and ink density were examined. The relationship between the sizing nonuniformity of coated papers and its ink absorption property was evaluated. Turbidity of rosin emulsion increased as the storage temperature and time were increased. Addition of simple or polymeric electrolytes caused reduction in $zeta$ -potential of the rosin dispersion and accelerated the coagulation tendency substantially. Reversion of the $zeta$ -potential of rosin dispersion, however, did not occur when coagulation was induced with simple electrolytes. On the other hand, addition of an anionic polyelectrolyte reversed the $zeta$ -potential of the flocculated rosin dispersion. This indicated that electrical double layer compaction and bridging flocculation were coagulation mechanisms for simple and polymeric electrolytes, respectively. Sizing degree decreased as coagulation of rosin was increased. Paper gloss, ink gloss and ink density were increased when sizing degree of base stock was increased most probably due to prevention of base paper swelling and increased binder migration to coating surface. This suggested that uneven printing ink density occurred when uneven sizing development was induced by coagulation of rosin particles.

• 한국세라믹학회지
• /
• 제34권1호
• /
• pp.79-87
• /
• 1997

졸-겔 스핀코팅법을 이용하여 VDT 기판에 반사방지 및 정전기방지 복층막을 코팅하고 코팅졸과 겔분말의 특성 및 코팅막의 전기적, 광학적, 기계적 특성을 조사하였다. 1층막은 복층막의 간섭조건을 만족시키는 굴절율을 얻기위해 투명 전도성 재료인 ATO(Antimony doped Tin Oxide) 졸과 SiO2 졸을 몰비 68:32로 혼합한 ATO-SiO2 복합졸을, 2층막에는 저굴절율의 SiO2 졸을 사용하였다. 각 코팅막을 45$0^{\circ}C$에서 30분간 열처리하였을 때 잔류 유기물은 완전히 제거되었다. ATO막의 표면저항은 3mol%의 Sb 첨가시 약 6$\times$107$\Omega$/$\square$로 최소를 나타내었고 SiO2 졸과의 혼합시 약 30mol% 까지는 표면저항이 완만히 증가하다가 그 이후에는 급격히 증가하는 경향을 나타내었으며, 간섭조건을 만족시키는 조성인 32mol%에서는 약 3$\times$108$\Omega$/$\square$를 나타내었다. 복층막의 반사율은 550nm의 기준파장에서 약 0.64%를 나타내었으며 광투과율은 약 3.20% 증가하였다. 복층막의 미소경도는 약 471.4kg.f/mm2로 코팅하지 않은 VDT기판의 경도와 유사한 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.683-686
• /
• 2004

In recent years, the supercapacitor and hybrid capacitor have related with substitutional energy source focused of many scientists because of their usage in power sources for electric vehicles, computers and other electric devices. The storage energy of electrical charge is based on electrostatic interactions in the electric double layer at the electrode/electrolyte interface, resulting in high rate capability and long cycle performance compared with batteries based on Faradaic electrode reactions. So we have been considered to carbon nanofibers as the ideal material for supercapacitors due to their high utilization of specific surface area, good conductivity, chemical stability and other advantages. In this work, we aimed to find out that the capacitance have increased because of electrochemical capacitance to provide by carbon nanofibers. Also carbon nanofibers based on chemical method and water treatment have been resulted larger capacitances and also exhibit better electrochemical behaviors about 15% than before of nontreated state. And also optical observations with treated and nontrteated carbon nanofibers discussed by the TEM, SEM, EDX, BET works and specific surface area analyzer. Their results also focused on the surface area of electrode and electrical capacitance was also improved by the effect of surface treatments.

• 한국지하수토양환경학회지:지하수토양환경
• /
• 제25권2_spc호
• /
• pp.86-100
• /
• 2020

Analyzing and monitoring environmental contaminants based on geophysical exploration techniques have become important and it is now widely applied to delineate spatial distribution geophysical characteristics in wide area. Among the techniques, induced polarization (IP) method, which measures polarization effects on electrical potential distribution, has drawn much attention as an effective tool for environmental monitoring since IP is sensitive to changes in biochemical reactions. However, various reactions stemming from the presence of multiple contaminants have greatly enhanced heterogeneity of polluted sites to result in highly variable electrical characteristics of the site. Those contaminants influence chemical and physical state of soil and groundwater to alter electrical double layer, which in turn influences polarization of the media. Since biochemical reactions between microbes and contaminants result in various IP effects, IP laboratory experiments were conducted to investigate IP responses of the contaminated soil samples under various conditions. Field IP surveys can delineate the spatial distribution of contamination, while providing additional information about electrical properties of a target medium, together with DC resistivity. Reviewing IP effects of contaminants as well as IP surveys can serve as a good starting point for the application of IP survey in site assessment for environmental remediation.

• 한국재료학회지
• /
• 제30권10호
• /
• pp.566-572
• /
• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• 한국결정성장학회지
• /
• 제8권4호
• /
• pp.599-604
• /
• 1998

본 논문은 PZT 박막의 기억소자 응용을 위한 Pt 그리고 RuO2 박막을 조사하였다. 초고주파 마그네트론 스퍼터링 방법을 이용하여 하부전극을 성장하였으며, 조사된 실험변수는 기판온도, 가스 부분압, RF 전력 그리고 후열처리 등이다. 기판온도는 Pt, $RuO_2$박막의 결정구조 뿐만 아니라 표면구조 및 비저항 성분에 크게 영향을 주었다. Pt 박막의 XRD 분석으로 기판온도가 상온에서 $200^{\circ}C$까지는 (111) 그리고 (200) 면이 혼재하는 결과를 보였으나 $300^{\circ}C$에서는 (111) 면으로 우선 방위 성장 특성을 보였다. XRD와 AFM 해석으로부터 Pt 박막 성장시 기판온도 $300^{\circ}C$, RF 전력 80W가 추천된다. 산소 분압비를 0~50%까지 가변하여 조사한 결과 산소가 5% 미만으로 공급되면 Ru 금속이 성장되고, 산소 분압비가 10 ~40%까지는 Ru와 $RuO_2$ 상이 공존하였으며 산소 분압비가 50%에서는 순수한 $RuO_2$상만이 검축되었다. 이 결과로부터 RuO2/Ru 이층 구조의 하부전극 형성이 산소 가스 부분압을 조절하여 한번의 공정으로 성장 가능하며, 이런 구조를 이용하면 금속의 낮은 비저항을 유지하면서도 PZT 박막의 산소 결핍에 의한 기억소자의 피로도 문제를 완화할 것으로 사료된다. 후 열처리 온도를 상온에서부터 $700^{\circ}C$까지 증가할 때 Pt와 $RuO_2$의 비저항 성분은 선형적 감소 추세를 보였다. 본 논문은 강유전체 기억소자 응용을 위한 최적화된 하부전극 제적조건을 제시한다.

• 센서학회지
• /
• 제9권2호
• /
• pp.106-112
• /
• 2000

REFET(reference electrode field-effect transistor)의 사용은 기준전각의 집적화 및 FET형 전해질 센서가 가지고 있는 온도와 빛의 의존성, 드리프트와 같은 전형적인 문제점들을 해결할 수 있는 효과적인 방법이다. 그러나 언급한 문제를 해결하기 위한 신뢰성 높은 REFET의 제작은 매우 어렵고 까다롭다. 본 논문에서는 고분자 이중층을 이용한 이온 방해막을 형성하여 고신뢰성의 REFET를 제작하여 FET형 전해질 센서에 적용하였다. 제작된 REFET를 pH, pNa-ISFET에 적용하여 측정한 결과, 정상적인 감도(55.4mV/pH, 53.5mV/decade)와 안정도를 보였으며, 드리프트 감소도 향상되었다.

• 조명전기설비학회논문지
• /
• 제21권3호
• /
• pp.35-43
• /
• 2007

본 논문에서는 전자 유도 법칙을 이용한 차량용 유도 전력 집전장치가 제안하였으며 전력 전송 특성을 개선하기 위한 전력 집전체의 몇 가지 설계에 관련된 개점을 제시하였다. 또한 다양한 공진 주파수로 동작되는 직렬 공진 컨버터와 연결하여 전력 전송 시스템의 해석을 나타내었다. 동작 주파수와 파라미터의 변동에 대한 시스템의 민감도가 고려되며, 유도 전력 전송 시스템에 있어서 전력은 코일이나 트랙의 형태인 1차 권선을 통하여 하나, 혹은 그 이상의 절연된 급전 코일로 전송된다. 본 논문은 유도전력전송의 집전장치의 구조를 기존변압기와 유사한 등가회로의 파라미터로 구성하고, 공극 및 권선을 고려한 1차, 2차측 파라미터를 설정하여 1차측 급전 주파수의 변화에 따른 집전특성에 대하여 기술하였다.