• Korean Journal of Materials Research
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• v.21 no.9
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• pp.497-501
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• 2011

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the $CdCl_2$ heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a $CdCl_2$ heat treatment was carried out. After the $CdCl_2$ heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 ${\Omega}cm$, and the transmittance in the visible region increased from 64% to 74%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.411-422
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• 2010

Self-sensing on micro-failure, dispersion degree and relating properties, of carbon nanotube(CNT)/epoxy composites, were investigated using wettability, electro-micromechanical technique with acoustic emission(AE). Specimens were prepared from neat epoxy as well as composites with untreated and acid-treated CNT. Degree of dispersion was evaluated comparatively by measuring volumetric electrical resistivity and its standard deviation. Apparent modulus containing the stress transfer was higher for acid-treated CNT composite than for the untreated case. Applied cyclic loading responded well for a single carbon fiber/CNT-epoxy composite by the change in contact resistivity. The interfacial shear strength between a single carbon fiber and CNT-epoxy, determined in a fiber pullout test, was lower than that between a single carbon fiber and neat epoxy. Regarding on micro-damage sensing using electrical resistivity measurement with AE, the stepwise increment in electrical resistivity was observed for a single carbon fiber/CNT -epoxy composite. On the other hand, electrical resistivity increased infinitely right after the first carbon fiber breaks for a single carbon fiber/neat epoxy composite. The occurrence of AE events of added CNT composites was much higher than the neat epoxy case, due to micro failure at the interfaces by added CNTs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.247-255
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• 2018

In this work, glucose solution and sodium chloride solution were distinguished noninvasively using a microwave complementary split-ring resonator (CSRR). Based on the electrical properties of the two solutions measured using a open-ended coaxial probe, a CSRR was designed and fabricated for operation at a specific frequency that facilitates differentiating the two solutions. Furthermore, a polydimethylsiloxane mold was fabricated to concentrate the solution at a region where the electric field of the resonator was strongest, and a laminating film was used to prevent contact between the solution and resonator. Experiments were performed by dropping $50{\mu}L$ of the solution in steps of 100 mg/dL up to a maximum human blood glucose level of 400 mg/dL. Our experiments confirmed that the transmission coefficients ($S_{21}$) of glucose solution and sodium chloride solution exhibit variations of -0.06 dB and 0.14 dB, respectively, per 100 mg/dL concentration change at the resonance frequency. Thus, the opposite trends in the variation of $S_{21}$ with change in the concentration of the two solutions can be used to distinguish between them.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.79-93
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• 1991

With the advent of ULSI, many problems in previous metallization techniques and interconnection materials have become more serious. In this work, selective deposition of copper to fill the submicron contact has been tried. After forming electro-deposited copper films on p-type (100) silicon wafer using 0.75M $CuSO_4{\cdot}$5H_2O$ as an electrolyte, the effect of deposition time, current density and concentration of an additive on film properties were investigated. Film thickness, particle size and resistivity were analyzed by Alpha Step, SEM and 4 - point probe measurement respectively. The deposition rate was about $0.5-0.6\mu\textrm{m}$/min at $2A/dm^2$ and the particle size increased with increasing current density. The resistivities of electro-deposited copper films were about $3-6{\mu}{\Omega}{\cdot}$cm for the particle size above $4000{\AA}$. By the addition of 0.2 g/l gelatin, the particle size was reduced to less than $0.1{\mu}m $ and selective plugging of copper on submicron contacts could be successfully achieved.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

• Journal of the Korean Institute of Gas
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• v.20 no.5
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• pp.17-26
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• 2016

Chemical plants and oil gas refinery facilities are intrinsically vulnerable to industrial hazards, such as explosion or fire. Especially, the fire is extremely dangerous to facility structures and plant personnel because of direct flame, radiant heat and smoke. In addition, it has the ripple effect of destroying infra-structures and polluting the environment. In an effort to tackle these potential industrial risks, the procedure of FRA techniques in chemical plants were investigated. The main focus was put on the time variation of physical properties of the main building, i.e. control rooms, warehouses and electrical substations, from a direct flame contact and radiant heat. The deformation of a building due to fire was monitored and modeled with respect to time variable. A variety of case studies, domestic and abroad, was tested in the model to verify the FRA procedure. The developed model was proven to be highly effective to reduce the possible risks at chemical plants. An accurate accident frequency prediction and damage quantification was made by the developed model.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.