• 산업진흥연구
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• 제1권1호
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• pp.7-11
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• 2016

IGZO의 접합특성을 조사하기 위해서 진공 중에서와 대기 중에서 열처리를 하여, 전지적인 특성을 조사하였다. 진공 중에서 열처리를 한 IGZO는 비정질특성을 나타내었지만 대기 중에서 열처리를 하면 결정질 특성을 가졌다. 열처하는 방법에 따라서 산소공공의 함량이 달라지기 때문이다. 대기 중에서 열처리를 하면 IGZO의 산소공공이 증가하였다. 산소공공은 전류를 증가시키고 따라서 대기 중에서 열처리를 한 IGZO는 오믹 접합을 나타내었다. 그러나 진공 중에서 열처리를 한 IGZO는 쇼키접합을 나타냈다.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.610-614
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• 2008

In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.321-322
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• 2007

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• 소음진동
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• 제9권2호
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• pp.317-323
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• 1999

Dynamic characteristics of catenary that supplies electrical power to high-speed trains are investigated. A simple catenary is composed of the contact and messenger wires connected by droppers possessing bi-directional stiffness properties. For slender, repeating structures such as catenary, both the wave propagation and vibration properties need to be understood. The influence of parameters that determine catenary dynamics are investiaged through numerical simulations involving finite element models. The effects of the tension and flexural rigidity of the contact wire is first investigated. The effects of dropper characteristics are then investigated. For linear droppers wave propagation as well as modal properties are determined. For large catenary motion, droppers can be modeled as bi-directional elements possessing low stiffness in compression and high stiffness in tension. For this case, impulse response is computed and compared with the cases of linear droppers. It is found that the catenary dynamics are primarily determined by contact wire tension and dropper properties, with large responses observed in 5∼40 Hz frequency range. In particular, the dropper stiffness and spacing are found to have dominant influence on the response frequency and the wave transmission characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.123-123
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• 2009

In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1643-1645
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• 2000

The effects of pre-sintering and infiltration conditions on the electrical and physical properties of Cu-Cr contact material have been studied. Specimens were prepared by infiltration technique, aiming at the final composition of Cu50w%Cr, with varying pre-sintering and infiltration conditions. It showed that increased pre-sintering temperature had a little influence on the final microstructure of Cu-Cr contact material, but improved the surface morphology of Cr-skeleton resulting in better wettability in the followed infiltration process. It also showed that Cr grain growth and gram shape change became prominent with increasing infiltration temperature and time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.173-176
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• 2000

In this paper, we investigated the surface degradation of HTV silicone rubber used for a polymeric insulator by UV irradiation. To study the surface ageing properties by W irradiation, we used the corona discharge charging and contact angle. Therefore, we observed the change of surface charge retention and decrease of surface hydrophobicity. Also, we discussed the chemical change in the surface range using the analytic equipment such as SEM, ATR-FTIR, ESCA. Therefore, it is found that the scissor of characteristic bonding and the reattachment of oxidant bonding was developed by UV rays radiation. As discussing the corona ischarge charging and the change of contact angle, it is found the effect of UV irradiation and the mechanism of chemical reaction

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.411-419
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• 2000

In this paper we have investigated the surface degradation by ultraviolet-irradiation in high-temperature vulcanized silicone rubber. Through the measurement of surface potential decay by corona-charging and of contact angle it is found that the change of surface electrostatic properties and the decrease of contact angle under UV-radiation. For the changes in micro-morphological and chemical structure of the UV-treated silicone rubber we utilized several analytical techniques such as SEM, ATR-FTIR,XPS. From this study it is shown that the chemical reactions(scissoring of side chain(S-$CH_3$) cross-linking and branching) occur on the surface of silicone rubber during the UV-irradiation. Also we obtained the results of the loss of low molecular weight chain by cross-linking and oxidation reaction.