• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1712-1719
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• 2015

In recent days, there was a significant development on the electrical, thermal, mechanical, physical, chemical, magnetic and optical properties of the polyamide enamel, varnish and other insulating materials by the addition of nano fillers to it. Enamel was used in High Voltage Apparatuses used in Medical Electronics as insulation. Insulating materials determine the life time of the electrical apparatuses. The life time of the insulating materials was improved by the addition of nano fillers to it. Hence the life time of the electrical apparatuses was improved by the mixing of nano fillers to the enamel. In this research, the basic dielectric properties of the enamel and enamel mixed with nano composites of silica and alumina were analyzed and compared with each other. The addition of nano fillers has improved the quality factor and capacitance of the enamel. It was also observed that the addition of nano fillers has reduced the dissipation factor and dielectric losses of the enamel. Heat produced by the dielectric losses was also reduced by adding nano fillers to it.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.458-463
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• 1995

The optical and electrical properties of $C_{22}$-Quinolinium(TCNQ) Langmuir-Blodgett films have been studied depending on the annealing temperatures. The optimal properties were investigated using UV/visible(300-800[nm]) absorption spectra and FTIR(Fourier-transformed- infrared) absorption measurements. The electrical properties were investigated in a frequency range of 10[Hz]-13[MHz]. The UV/visible absorption spectra at room temperature show that there are four characteristic peaks at 320, 380, 494 and 678[nm]. These absorption peaks decrease very rapidly above the annealing temperature of 180[.deg. C], which is due to a structural change of TCNQ. The FTIR absorption measurements strongly support the result of the UV/visible absorption spectra, because the absorption peak of TCNQ- at 2181[$cm^{-1}$ /] also decreases above 140[.deg. C]. The frequency-dependent dielectric constant shows that there is a dielectric dispersion near 1[MHz] which is due to an orientational polarization of the molecules inside the film. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.309-309
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• 2007

The LTCCs (low-temperature co-fired ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<$900^{\circ}C$ are required. In this study, we investigated with glass-ceramic composition, which was crystallized with two crystals. The microstructure, crystal phases, thermal and mechanical properties, and dielectric properties of the composites were investigated using FE-SEM, XRD, TG-DTA, 4-point bending strength test and LCR measurement. The starting temperature for densification of a sintered body was at $779{\sim}844^{\circ}C$ and the glass frits were formatted to the crystal phases, $CaAl_2Si_2O_8$(anorthite) and $CaMgSi_O_6$(diopside), at sintering temperature. The sintered bodies exhibited applicable dielectric properties, namely 6-9 for ${\varepsilon}_r$. The results suggest that the glass-ceramic composite would be potentially possible to application of low dielectric L TCC materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.768-771
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• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.467-469
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• 2001

KAM200 which can be used electroluminescence binder is cyano material. In this study, we have fabricated KAM200 thin film by Spin-Coating method. And we have studied the electical properties of KAM200 thin films. In the I-V characteristics, the current decreases as the voltage overflow definite voltage immediately. And that definite voltage depend on thickness of KAM200 material. In the case of thickness is 1.9[$\mu\textrm{m}$], definite voltage is 7[V]. And that's electrical field 3.86[MV/m]. The dielectric properties of KAM200 thin film is investigated by measuring dielectric dispersion and absorption. KAM200's Relative dielectric constant is 10.25, and it has high permittivity compared with different materials.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.87-95
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• 2023

TiO₂ thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO₂ thin films grown by the ALD deposition method were studied. The grown TiO₂ thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO₂ thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO₂ as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.