• Title/Summary/Keyword: electrical and dielectric properties

Search Result 2,245, Processing Time 0.039 seconds

A Study on the Microstructure Analysis and Dielectric Properties of Porcelain Suspension Insulators (자기제 현수애자의 미세구조분석과 유전특성에 관한 연구)

  • Kim, Chan-Yeong;Kim, Ju-Yong;Song, Il-Geun;Lee, Byeong-Seong
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.48 no.9
    • /
    • pp.641-647
    • /
    • 1999
  • The paper provides the results of microstructure analysis and dielectricproperties of porcelain suspension insulators. The evaluation of characteristics was also made as a function of the manufacturers and fabricated years for the experimental specimens which had been used in real distribution lines. Even though the series A contained higher alumina contents than the series B, the densification of series A was lower than that of series B, resulting from much porosity. The microstructure investigation confirmed that series A had much porosity than series B. The series A contained quartz $(SiO_2),\; mullite\; (Al_6Si_2O_{13}),\; corundum(Al_2O_3),\; and cristobalite\; (SiO_2)$ phases. However, the series B had no cristobalite phase which had very high thermal expansion coefficient. Also, the tan$\delta$of series A was more abruptly increased than that of series B as increasing temperature. The elevated temperature may make much expansion of cristobalite crystal than other crystals, resulting in crack and puncture inside cap during the summer days.

  • PDF

Ferroelectric Properties of PZT Thin Films by RF-Magnetron sputtering (RF 마그네트론 스퍼터링 법을 이용한 PZT 박막의 강유전 특성)

  • Park, Young;Joo, Pil-Yeoun;Yi, Ju-Sin;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.05a
    • /
    • pp.341-344
    • /
    • 1999
  • The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

  • PDF

A Compact Feeding Structure for an Wide-band Array Antenna using a Microstrip Metamatreial UWB Power Divider (메타재질구조의 UWB 전력 분배기를 이용한 광대역 배열 안테나를 위한 급전부 설계)

  • Eom, Da-Jeong;Kahng, Sung-Tek;Park, Jeong-Hoon
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.61 no.8
    • /
    • pp.1159-1163
    • /
    • 2012
  • In this paper, a new method is suggested to reduce the size of a wide-band array antenna. The power-divider for the feeding structure is made compact as ${\lambda}/8$ with the help of a novel Metamaterial UWB bandpass filter. This power divider is clearly different from others in that the proposed design uses microstrip structured Composite Right and Left-Handed (CRLH) filters, while others use two dielectric layers or long tapered transmission lines. In order to validate the proposed design method, the circuit and full-wave simulated results of the power divider with the Metamaterial UWB filters are compared to each other, and the Metamaterial properties of the structure are shown with the electric field at the ZOR and dispersion diagram. Furthermore, the antenna performance of the fabricated antenna with the power divider is measured and compared with the prediction. Also, the size reduction effect by the proposed scheme is addressed.

The Effect of Gas Environment on the Electronic and Optical Properties of Amorphous Indium Zinc Tin Oxide Thin Films

  • Denny, Yus Rama;Lee, Sun-Young;Lee, Kang-Il;Seo, Soon-Joo;Oh, Suhk-Kun;Kang, Hee-Jae;Heo, Sung;Chung, Jae-Gwan;Lee, Jae-Cheol;Tougaard, Seven
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.141-141
    • /
    • 2012
  • The electronic and optical properties of Indium Zinc Tin Oxide (IZTO) thin films using gas environment were investigated by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). REELS spectra revealed that the band gaps of IZTO thin films are 3.26, 3.07, and 3.46 eV for water mixed with oxygen, argon mixed with oxygen, and air environments, respectively. The measured band gaps by REELS are consistent with the optical band gaps obtained by UV-Spectrometer. The optical properties represented by the dielectric function $\mathfrak{m}$, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the IZTO thin films with different gas environments were determined from a quantitative analysis of REELS spectra. The calculated transmission from quantitative analysis of REELS spectra shows good agreement with transmission measured by UV-spectrometer. The transmission values of 89% and low electrical resistivity of $3.55{\times}10^{-3}{\Omega}{\cdot}cm$ have been achieved for argon mixed with oxygen which indicates that the gas enviroment plays an important role in improving the electronic and optical properties of films.

  • PDF

Dielectric Properties of Pt/SBN/Pt Capacitor Thin film (Pt/SBN/Pt 캐패시터 박막의 유전특성)

  • Kim, Jin-Sa;Oh, Yong-Cheul;Shin, Cheol-Gi;Bae, Duck-Kweon
    • Proceedings of the KIEE Conference
    • /
    • 2009.07a
    • /
    • pp.1250_1251
    • /
    • 2009
  • The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio and RF power, respectively. Also, The capacitance of SBN thin films were increased with the increase of deposition temperature.

  • PDF

The crystal structure and dielectric properties of Polyethylene exposed Radiation (방사선이 조사된 폴리에틸렌의 결정형상과 유전특성)

  • Kang, J.H.;Kim, H.J.;Yu, K.M.;Han, S.O.;Kim, J.S.;Park, K.S.
    • Proceedings of the KIEE Conference
    • /
    • 2001.07c
    • /
    • pp.1503-1505
    • /
    • 2001
  • 방사선이 폴리에틸렌 박막의 결정구조에 미치는 영향은 결정구조의 전 영역에서 결정 격자의 결함으로 나타났으며, 이는 탄탄한 연결고리를 형성하고 있는 분자쇄의 단절로 인하여 결정 내부 및 표면에서 화학작용에 의한 기포가 발생한 것으로 판단된다. 또한, 방사선량의 증가에 따라서 그 결함은 비례적으로 증가하였으며, 주파수에 따른 유전특성 고찰결과는 10 MHz 이상의 범위에서 유전율이 급격히 증가하였다.

  • PDF

A study on HF filter of $Pb({Zr_0.53}, {Ti_0.47})O_3$ piezoelectric ceramics ($Pb({Zr_0.53}, {Ti_0.47})O_3$ 압전세라믹소자의 고주파필터에 관한 연구)

  • 박창엽;송준태
    • 전기의세계
    • /
    • v.27 no.3
    • /
    • pp.43-46
    • /
    • 1978
  • The prezoelectric ceramic specimen compoxed of PbO, ZrO$_{2}$, TiO$_{2}$ were prepared in this Lab, and showed properties of dielectric constant .epsilon.$^{33}$ /.epsilon.$_{0}$ 487 at 1kHz, electromechanical coefficient Kr 0.524. As the characteristics of piezoelectric HF filter used these piezoelectric specimen were the resonant point 6.7 MHz, effective bandwidth 690KHz, it was exellant. Since a LC resonant filter can be replaced bt this piezoelectric HG filter, it will greatly contribute to compose a compact circuit. If the resont point can be controlled, this piezoelectric HF filter practically.

  • PDF

The dielectric and degradation properties of Polypropylene exposed Radiation (방사선이 조사된 폴리프로필렌의 유전특성과 열화현상)

  • Kang, J.H.;Kim, H.J.;Yu, K.M.;Park, K.S.;Kim, J.S.;Han, S.O.
    • Proceedings of the KIEE Conference
    • /
    • 2000.07c
    • /
    • pp.1622-1624
    • /
    • 2000
  • 방사선이 조사된 폴리프로필렌의 유전특성을 고찰한 결과 방사선 조사량이 40 kGy이하의 경우에는 유전상수가 서서히 증가하였으나. 40 kGy이상에서는 급격한 증가를 나타냈다. 또한, 방사선이 결정에 미치는 영향은 결정과 결정의 경계면에서 열화현상이 발생하는 것으로 관측되었고, 방사선의 세기가 증가할 수록 열화공의 수도 증가하는 것으로 나타났다.

  • PDF

Dielectric and Insulation breakdown properties in manufacture process variable for High Voltage Capacitor (AC용 고압 캐패시터의 제조 공정 변수에 따른 유전 및 절연파괴 특성)

  • Yoon, Jung-Rag;Lee, Heun-Young;Lee, Serk-Won
    • Proceedings of the KIEE Conference
    • /
    • 2006.10a
    • /
    • pp.14-15
    • /
    • 2006
  • 제조공정상에서 발생하는 공정 변수에 의한 제품의 수준별 제품에 대하여 인가 전압별 절연저항 측정 및 내전압 측정 결과 내전압이 낮은 제품군에서 절연저항이 낮게 나타났으며 산포도 크게 나타남을 확인 할 수 있었다. PCT 시험 후의 유전 특성은 경우 용량의 변화율은 상승한 반면 제품군에 따른 용량 변화율의 크기는 작은 반면에 유전손실의 경우 PCT 실험후 변화율이 크게 나왔으며 이와같은 결과는 신뢰성 측면에서 취약할 수 있음을 보여주고 있다.

  • PDF

Dielectric and piezoelectric properties of PLT ceramics for piezoelectric resonator (압전레조네이터용 PLT 세라믹스의 유전 및 압전특성)

  • Lee, Chang-Bae;Yoon, Jung-Rag;Myoung, Jae-Ok;Woo, Byung-Chul
    • Proceedings of the KIEE Conference
    • /
    • 2007.07a
    • /
    • pp.1355-1356
    • /
    • 2007
  • SMD type 압전레조네이터 제작을 위한 압전 조성물을 찾고자 PLT 세라믹스에 B-site Ti 자리에 Mn을 치환시키고 소결첨가제로서 CuO를 첨가하였다. $0{\sim}0.4wt%$ CuO를 첨가하여 1150, 1200, $1250^{\circ}C$로 각각 소결한 후 소결온도 및 CuO 첨가량에 따른 압전 및 유전특성을 관찰하였다. CuO 첨가량에 따라 1150, $1200^{\circ}C$ 소결시 밀도가 증가하였고, $1250^{\circ}C$ 소결시 기계적 품질계수가 증가하였다. 소결온도 $1250^{\circ}C$, 0.1wt% CuO 첨가시 밀도, 전기기계 결합계수(kp), 유전상수, 기계적 품질계수는 7.5[g/cm3], 0.1, 253, 1776을 각각 나타내었다.

  • PDF