• Journal of Environmental Health Sciences
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• v.47 no.3
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• pp.259-266
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• 2021

Objectives: This study was conducted to identify the emissions characteristics of total particulate matter (TPM), fine dust (PM₁₀, PM_2.5), and gaseous pollutants (SOx, NOx) in iron and steel manufacturing facilities in order to investigate emissions factors suitable for domestic conditions. Methods: Total particulate matter (TPM), fine dust (PM₁₀, PM_2.5), and gas phase materials were investigated at the outlet of electric arc furnace facilities using a cyclone sampling machine and a gas analyzer. Results: The concentrations of TPM ranged from 1.64 to 3.14 mg/Sm³ and the average was 2.47 mg/Sm³. Particulate matter 10 (PM₁₀) averaged 1.49 mg/Sm³ with a range of 0.92 to 1.99 mg/Sm³, and the resulting ratio of PM₁₀ to TPM was around 60 percent. PM_2.5/PM₁₀ ranged from 33.7 to 47.9% and averaged 41.6%. Sulfur oxides (SOx) were not detected, and nitrogen oxides (NOx) averaged 6.8 ppm in the range of 5.50 to 8.67 ppm. TPM emission coefficients per product output were in the range of 0.60 to 1.26 g/kg, 0.13 to 0.79 g/kg for PM₁₀ and 0.12 to 0.36 g/kg for PM_2.5, and showed many differences from the emissions coefficients previously announced. An emissions coefficient for NOx is not currently included in the domestic notices, but the results were calculated to be 0.42 g/kg per product output. Conclusions: Investigation and research on emissions coefficients that can reflect the characteristics of various facilities in Korea should be conducted continuously, and the determination and application of unique emissions coefficients that are more suitable for domestic conditions are needed.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.1
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• pp.109-116
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• 2021

In order to replace mineral aggregate used as road pavement materials with steel slag aggregate, this present study evaluated mechanical properties of SMA Concrete mixtures using steel slag aggregate as oxidized slag from electric furnace in iron works. The variables of this experiment are the aggregate type of mineral and steel slag and the sieve sized of 10mm and 13mm. The physical properties inclu ding the specific gravity and absorption rate etc. of the slag aggregate mixtu res satisfied the KS standard as asphalt mixtu re. As a resu lt of evalu ating the mechanical properties of the asphalt mixtures, the optimum asphalt content of the slag aggregate mixtures were lower than that of the mineral aggregate mixtures, but other quality standards were all satisfied. In the deformation strength evaluation, the slag aggregate mixtures were measu red slightly higher than that of the mineral aggregate mixtu res, and the dynamic stability test satisfied the 2,000pass/mm standard value in all specimens. And, the moduli of resilient of the slag aggregate mixtures showed an improved value compared with the mineral aggregate mixtures. Therefore, as the resilient rate of the slag aggregate mixtures improved, it is speculated that there will be an effect of improving public performance according to the repeated traffic load of the vehicle.

• Clean Technology
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• v.16 no.4
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• pp.258-264
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• 2010

This study estimated the possibility of phosphate removal characteristics to utilize EAF(electric arc furnace) slag as submarine cover material. The major phosphate removal mechanism was a certain formation of HAP precipitation occurred by the ionization reaction between $Ca^{2+}$ and $OH^-$, which were leached from the EAF Slag. Another phosphate removal mechanism was the adsortion of EAF slag surface. As a result of $PO_4{^-}-P$ removal characteristics using continuous column reactor, $PO_4{^-}-P$ concentration decreased rapidly after 3 days and 10 days later, it show under 0.5 ppm. The result as applied in real sea water, shows that the phosphate removal effects were 93~98% by the subaqueous sediment removal using the EAF slag. In conclusion, EAF slag is useful in $PO_4{^-}-P$ removal and control and it is possible to use without additional process like crush and selection.

• Journal of Industrial Convergence
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• v.21 no.7
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• pp.19-27
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• 2023

As the secondary battery market expands, the process of producing laterite ore using the rotary kiln and electric furnace method is expanding worldwide. As ESG management expands, the management of air pollutants such as nitrogen oxides in exhaust gases is strengthened. The rotary kiln, one of the main facilities of the pyrometallurgy process, is a facility for drying and preliminary reduction of ore, and it generate nitrogen oxides, thus prediction of nitrogen oxide is important. In this study, LSTM for regression prediction and LightGBM for classification prediction were used to predict and then model optimization was performed using AutoML. When applying LSTM, the predicted value after 5 minutes was 0.86, MAE 5.13ppm, and after 40 minutes, the predicted value was 0.38 and MAE 10.84ppm. As a result of applying LightGBM for classification prediction, the test accuracy rose from 0.75 after 5 minutes to 0.61 after 40 minutes, to a level that can be used for actual operation, and as a result of model optimization through AutoML, the accuracy of the prediction after 5 minutes improved from 0.75 to 0.80 and from 0.61 to 0.70. Through this study, nitrogen oxide prediction values can be applied to actual operations to contribute to compliance with air pollutant emission regulations and ESG management.

• Journal of the Korea institute for structural maintenance and inspection
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• v.27 no.6
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• pp.130-137
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• 2023

By using XRF (X-ray fluorescence), this study investigates the variation of chemical properties in cement pastes at elevated temperatures. High-temperature conditions were prepared by using an electric furnace, planning a total of 11 target temperatures ranging from room temperature to 1000 ℃. A standard library of geo-quant basic was applied for the analysis of 12 elements in cement paste, including Ca, Si, Al, Fe, S, Mg, Ti, Sr, P, Mn, Zn and K. The results revealed that, as the temperature increased, the proportion of each element in the cement paste also increased. With the exception of a few elements present in extremely low amounts in the cement pastes, the variation in the composition ratio of most elements exhibited a strong correlation with temperature, with an R-squared value exceeding 0.98. In this study, cement pastes exposed to normal and high-temperature environments were compared. The authors established that the reasons for the different results in this comparison can be explained from the same perspective as when comparing raw cement with cement paste. Furthermore, this study discussed the potentially most dominant parameter when investigating the properties of cement paste using XRF.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.