• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.4
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• pp.570-577
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• 2002

Charged liquid particle's behavior in electric and flow field was simulated to define the effect of electric field on the contact area and its dispersion. For the simulation of flow and electric field finite volume method was applied. To find out the particle's moving path in that field lagrangian equation of motion was solved by Runge-Kutta methods. We assumed that the particle was charged 10% of Rayleigh limit while the particle passing through the electrode and the particle does not have an effect on the electric field. In case of 30[Kv] of voltage charging the particles injected from the central 60% of the nozzle injection area adhere to the grounded moving plate and no dispersion occurred. Increasing the charged voltage to 40[Kv], it brought about the same phenomena as that of 30[Kv] charging except the dispersion. Voltage increasing from 30[Kv] to 40 [Kv] caused higher Coulomb force acts on the particle and it made the particle dispersion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.189-189
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• 2009

This work was focused on the dielectrophoretic force of fullerenes dispersed in liquid crystal host medium, which are investigated in the homogeneously aligned liquid crystal (NLC) cells driven by external electric field. A fullerene of 10 wt% was doped into the LC medium and its electric field induced motion was controlled by both in-plane and vertical electric field. When the electric field was applied, the fullerene start to move in direction of applied electric field. The dark, grey and white states in the proposed device can be obtained by suitable combination of the polarity of applied electric field. The w and l are the width and distance between the electrodes. The reflectance at different l was measured and was found to be increased with increasing l. The dynamical motions of fullerene particles in LC medium suggest that fullerene can be designed for electronic-paper like displays.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.278-281
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• 2013

The effects of electric field frequency on the AC electrical treeing phenomena in an epoxy/layered silicate (1.5 wt%) were investigated in a needle-plate electrode arrangement. A layered silicate was exfoliated in an epoxy-base resin with AC electric field apparatus. To measure the treeing initiation and propagation- and the breakdown rate, a constant alternating current (AC) of 10 kV with three different electric field frequencies (60, 500, and 1,000 Hz) was applied to the specimen in the needle-plate electrode specimen in an insulating oil bath at $130^{\circ}C$. At 60 Hz, the treeing initiation time was 12 min, the propagation rate was $0.24{\times}10^{-3}$ mm/min, and the morphology was a dense branch type. As the electric field frequency increased, the treeing initiation time decreased and the propagation rate increased. At 1,000 Hz, the treeing initiation time was 5 min, the propagation rate was $0.30{\times}10^{-3}$ mm/min, and the morphology was a dense bush type.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.262-262
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• 2013

In surface chemistry area, many scientists studied the electrochemical reaction by changing work-function of metal; however, these methods had the weakness that it did not create the electric field. Unlike earlier studies, our capacitor-method makes a strong electric field in ice film. This electric field was induced by soft landing $Cs^+$ ions on ice film, and the strength was measured by the vibrational Stark shift of acetonitrile. In our system, the electric field strength is $10^9$ V/m and it is almost same in the electrochemical cell. This capacitor model provides new method to investigate the electrochemical reaction in vacuum system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.1
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• pp.107-112
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• 2011

In this paper, the optimum design of the glass net shape was studied to minimize the electric field of mold transformer. The glass net is used for reinforcement in structure between coils and epoxy, but it can cause to increase the electric field and the partial discharge. Therefore, the optimum design of glass net is required to minimize the electric field. In this paper, the objective function was approximated by using response surface method and then Zoom-in method was used for optimal design to minimize the electric field. The electric field was analysed using finite element method for each shape of glass nets.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.363-367
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• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.58-63
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• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.38-44
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• 1995

The scattered electric field from a multilayered circular dielectric cylinder is caculated. Approximate boundary condition used in on-surface radiation boundary condition(OSRC) method has been applied to all the boundary surface of N-layered dielectric cylinder. It was assumed that scattered electric field at inner boundary surface in one region transmitted to the adjacent region at outer boundary surface. In the whole region, the unknown coefficients of electric field are acquired by the given incident electric field with ease. Electric field distribution at each boundary surface and the scattered electric field in free space are taken with the calculated unknown coefficients. the results obtainted were compared with those results that were used by regular surface boundary condition.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1824-1826
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• 1997

In this paper, in order to obtain statistical informations on lightning electromagnetic waveforms, electric field waveforms produced by lightning return strokes were measured and analyzed. The electric field measuring system consists of hemisphere antenna 30[cm] in diameter, integrator and data acquisition. system. The frequency bandwidth of the measuring system is 200[Hz] to 1.56[MHz], and the sensitivity is 0.96[mV/V/m]. The mean value of front time of electric field waveforms produced by positive lightning return strokes is 5.87[${\mu}s$], and that of negative is 4.12[${\mu}s$]. The mean values of zero-crossing time for positive or negative electric field waveforms are 35.00 and 26.61[${\mu}s$], respectively. The mean value of percentage dip-depth for positive electric field waveforms is 33.68[%], and that for negative is 28.36[%].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.6
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.