• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.959-961
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• 1999

ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.520-527
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• 2006

The electrical discharge and operational characteristics of needle and wire-cylinder corona charger based on current measurements for positive and negative coronas were evaluated and compared. A semi-empirical method was used to determine the ion concentrations in the charging zone and at the outlet of both chargers. Results from experimental investigation revealed that magnitudes of the charging current from the wire-cylinder charger were approximately 3.5 and 2 times smaller than those from the needle charger for the positive and negative coronas, respectively. The ion number concentrations at the outlet for positive corona of both chargers were higher than fur negative corona at the same voltage. Flow and electric fields in the charging zone of both chargers were also analyzed via numerical computation. Strong electric field strength zone was identified and led to high charging and particle deposition. Effect of particle deposition on the evolution of discharge current was presented. It was shown that ions loss inside the wire-cylinder charger was higher than the needle charger The particle deposited on the corona electrodes and on the grounded cylinder caused a great reduction in charging efficiency of both chargers.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1549-1551
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• 1997

In this study, the $\beta$-Polyvinylidene fluoride($\beta$-PVDF) organic thin films were fabricated by physical vapor deposition method as one of the dry-processing methods and applying electric field during the vapor deposition. When the substrate temperature is $80^{\circ}C$, the PVDF organic thin films exhibit the characteristic absorption band of the $\beta$ forms $510cm^{-1}$, $602cm^{-1}$ and $1273cm^{-1}$, and the fraction of $\beta$ form crystals in the total crystalline content was 95%. The molecular structure of PVDF organic thin films were transformed from $\alpha$ to $\beta$ form with increasing of applied electric field and the control of substrate temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.679-685
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• 2004

Although the electrophoretic deposition method has the advantage of simple processing procedure, less fabrication facilities, and easier control for deposition thickness and wire length, providing economical and technical merits, it also has the disadvantages of cracking and porosity phenomena, requiring an improved processing method for higher particle density and constant particle orientation. we have developed an optimization method to increase the particle density and to unify its orientation, and have performed a study to overcome the cracking and porosity problems in the fabricated superconductor. In order to improve the surface uniformity and the conduction properties of the fabricated YBCO thick films, a system that applies alternate voltage vertically has been developed for the first time and applied to the electrophoretic deposition process. The applied alternate electric field caused a force to be exerted on each YBCO particle and resulted in a rotation of the particle in the direction of applied electric field, accomplishing a uniform particle orientation. We name this process as the shaky-aligned electrophoretic deposition method. For commercial utilization and efficiency, in this dissertation, alternating voltage of 60 Hz and 25 ∼ 120 V/cm was proposed to apply it as a subsidiary source for shaky-flow deposition so that the fabricated thin film showed uniform surface morphology with less voids and cracks and Tc,zero of 90 K and the critical current density of 3419 A/$cm^2$.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.42-46
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• 2006

This paper presents a method for deposition an individual carbon nanotube (CNT). The alignment of a single CNT is very useful to perform studies related to applications in FET (Field Emitted Transistor), SET (Single Electron Transistor) and to make chemical sensor as well as bio sensors. In this study, we developed the deposition method of a CNT individualized in a solution. Using the electrokinetic method, we found the optimum conditions to assemble the nanotube and discussed about plausible explanation for the assembling mechanism. These results will be available to use for making the CNT sensor device.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.105-108
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• 2002

For fabricating high T$\sub$c/ superconducting deposited film, novel electrophoretic deposition technique applied to deposit surface charged Particles on metal substrate with oxy d.c field has been studied. The electric properties of superconducting film don't improve easily because the particles of deposition film are deposited randomly on substrate and don't make orientation affected to its critical current density. In this paper, we studied conventional electrophoresis in addition to a.c field assisted for the improvement of BSCCO superconducting film with high orientation of deposition particles.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1199-1202
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• 2003

In this research, microfabrication technique using localized electrochemical deposition is presented. Electric field is localized near the tip end region by applying ultra short pulses. Platinum tip is used as the counter electrode and copper is deposited on the copper substrate in 0.5 M CuSO$_4$ and 0.5 M H$_2$SO$_4$ electrolyte. The deposition characteristics such as size, shape, and structural density according to pulse duration and applied voltage are investigated. Micro-columns less than 10 $\mu\textrm{m}$ in diameter are fabricated using the presented technique. The process can be potentially used for three dimensional metal structure fabrications with micrometer feature size.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.179-186
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• 2014

Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.