• Title/Summary/Keyword: electric deposition

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Effects of lanthanum doping on ferroelectric properties of direct-patternable $Bi_{4-x}La_xTi_3O_{12}$ films prepared by photochemical metal-organic deposition

  • Park, Hyeong-Ho;Kim, Hyun-Cheol;Park, Hyung-Ho;Kim, Tae-Song
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.287-287
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    • 2007
  • The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.

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Preparation of ZnO Thin Film by Electrophoretic Deposition(EPD)

  • Jun, Byung-Sei
    • Journal of the Korean Ceramic Society
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    • v.49 no.1
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    • pp.78-83
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    • 2012
  • The electrophoretic deposition(EPD) of ZnO nano-sized colloids is investigated by changing the colloid number concentration, applied force, and deposition time. The change of the colloid size in a suspension was examined by the different colloid number concentrations (N = $3.98{\times}10^{15}$, N = $3.98{\times}10^{14}$, and N = $3.98{\times}10^{13}$) with an increase of the deposition time and applied forces. Deposition behavior was investigated by changing the applied fields (from DC 5 V to 50 V) and the deposition time (5 min to 25 min). The surface microstructures of the as-deposited films were investigated by SEM. The dried films were sintered from $850^{\circ}C$ to $1,050^{\circ}C$ for 2 h and then the microstructures were also explored by SEM. The agglomeration rate was enhanced by increasing the colloid number concentration of colloids. Colloid number concentration in a suspension must be rapidly decreased at higher values of the electric field. ZnO nano-sized colloids had the highest zeta potential value of over -28 mV in methanol. A homogeneous microstructure was obtained at colloid number concentration of N = $3.98{\times}10^{13}$, applied DC field of 5 V/cm and 15 min of deposition time at an electrode distance of 1.5 cm. Under these conditions, the deposited films were sintered at $850^{\circ}C$ and $1,050^{\circ}C$ for 2 h. The results show a typical pore-free surface morphology of a uniform thickness of 400 nm under these experimental conditions.

The Electric Breakdown Chatacteristics of Polyimide Thin Films by Self Healing Method (자기절연회복법에 의한 폴리아미드 박막의 절연파괴특성)

  • Kim, Hyeong-Gweon;Lee Eun-Hak;Park, Jong-Kwan
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.2
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    • pp.1-7
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    • 1999
  • The polymide thin films were fabricated by vapor deposition polymerized method of dry processes and studied the electric breakdown characteristics by self healing method. Polyamic-acid(PAA) thin films prepared by vapor deposition-polymerization (VDP) from PMDA(Pyromellitic dianhydride) and DDE(4,4'-diaminodiphenyl ether) were changed to PI thin films by thermal curing. In the same sample, electric breakdown fields increase with increasing test number, and then saturated over test number of the 25th. When the curing temperatures were 200$^{\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ and 350$^{\circ}C$, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm and 4.55MV/cm at the test number of 40th.

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A Study on the Characteristic of MOS structure using $HfO_{2}$ as high-k gate dielectric film ($HfO_{2}$를 이용한 MOS 구조의 제작 및 특성)

  • Park, C.I.;Youm, M.S.;Park, J.W.;Kim, J.W.;Sung, M.Y.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.163-166
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    • 2002
  • We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm, so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

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A Study on the Chemical Components of Acid Deposition (산성 강하물질의 화학적 성분에 관한 연구)

  • 권오영;윤오섭
    • Journal of Environmental Health Sciences
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    • v.20 no.2
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    • pp.39-54
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    • 1994
  • Dry and wet deposition samples were continuously collected by deposit gauge. In Bulkwang area of Seoul and Kanghwa in west coastal area of Korea. In order to evaluate the level of air pollution and its chemical composition, Bulkwang area located in Seoul and Kanghwa in west coastal area were chosen for sampling site. dry deposition concentrations, pH, electric conductivity and water soluble ion concentrations of deposit gauge were analysed. The results of comparison between urban area and coastal area were summarized as follows. Mean concentrations of dry deposition in Bulkwang was 2.807 ton/km$^2$/month (range: 5.171~1.128 ton/km$^2$/month) while that in Kanghwa was 1.990 ton/km$^2$/month (range: 3.358 ~ 1.084 ton/km$^2$/month), which showed a significant difference between two areas. The rainfall during the period from June to September in 1990 recorded 1859.7 mm which was 78.8% of its mean amount in Seoul, and 1846.9 mm which was 81.6% that of Kanghwa. In Bulkwang area, correlation coefficients of deposit chemical composition were 0.95 for SO$_4^{-2}$ and Na$^+$, 0.94 for SO$_4^{-2}$ and NH$_4^+$, 0.93 for CI$^-$ and NH$_4^+$ and 0.85 for Cl$^-$ and Ca$^{2+}$, respectively. Then, the results indicate that sulfates such as $Na_2SO_4$, $(NH_4)_2SO_4$, and CaSO$_4$ were the major chemical state of deposit. In Kanghwa area, it was considered that NaCl, $NH_4NO_3$, NaNO$_3$, and $Ca(NO_3)_2$ were the major chemical state of deposit.

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Properties of Silicon-deposited Meta-aramid Fabrics by RF Magnetron Sputtering (RF 마그네트론 스퍼터링에 의해 실리콘이 증착된 메타아라미드 직물의 성질 분석)

  • Park, Jong Hyeon;Lee, Sun Young;Kim, Chun Su;Kang, Song Hee;Kim, Eui Hwa;Lee, Seung Goo
    • Textile Coloration and Finishing
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    • v.29 no.1
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    • pp.18-24
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    • 2017
  • Meta-aramid fabric has been widely used as the reinforcement of composites due to its high flame resistance and tearing strength. Functionality such as abrasion resistance of fabric is very important for specialty fabrics used in car racing suits. In this study, to improve abrasion resistance property of meta-aramid fabric, silicon deposition was conducted by utilizing RF magnetron sputtering. The sputtering process parameters effects were investigated as sputtering power and substrate temperature. The obtained results suggest that the silicon deposition on the meta-aramid fabric has obvious effect upon increasing the abrasion resistance, the thermal insulation and the electric resistance condition for silicon deposition was established. In conclusion, the results of this study have made it possible to manufacture meta-aramids with higher abrasion strength.

Template-directed Atomic Layer Deposition-grown $TiO_2$ Nanotubular Photoanode-based Dye-sensitized Solar Cells

  • Yu, Hyeon-Jun;Panda, Sovan Kumar;Kim, Hyeon-Cheol;Kim, Myeong-Jun;Yang, Yun-Jeong;Lee, Seon-Hui;Sin, Hyeon-Jeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.239.1-239.1
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    • 2011
  • Dye sensitized solar cells (DSC) are promising devices for inexpensive, nontoxic, transparent, and large-scale solar energy conversion. Generally thick $TiO_2$ nanoporous films act as efficient photoanodes with their large surface area for absorbing light. However, electron transport through nanoparticle networks causes the slowdown and the loss of electron transport because of a number of interparticle boundaries inside the conduction path. We have studied DSCs with precisely dimension-controlled $TiO_2$ nanotubes array as photoanode. $TiO_2$ nanotubes array is prepared by template-directed fabrication method with atomic layer deposition. Well-ordered nanotubes array provides not only large surface area for light absorbing but also direct pathway for electrons with minimalized grain boundaries. Large enlongated anatase grains in the nanotubes could enhance the conductivity of electrons, but also suppress the recombination with holes through defect sites during diffusion into the electrode. To study the effect of grain boundaries, we fabricated two kinds of nanotubes which have different grain sizes by controlling deposition conditions. And we studied electron conduction through two kinds of nanotubes with different grain structures. The solar cell performance was studied as a function of thickness and grain structures. And overall solar-to-electric energy conversion efficiencies of up to 7% were obtained.

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Study about material properties of Al particles and deformation of Al alloy substrate by cold gas dynamic spray (초음속 저온분사법에 의한 알루미늄 합금 모재의 변형과 적층된 알루미늄 층의 물성에 대한 연구)

  • Lee, J.C.;Ahn, S.H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.145-148
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    • 2006
  • Cold gas dynamic spray is a relatively new coating process by which coatings can be produced without significant heating during the process. Cold gas dynamic spray is conducted by powder sprayed by supersonic gas jet, and generally called the kinetic spray or cold-spray. Cold-spray was developed in Russia in the early 1980s to overcome the defect of thermal spray method. Its low process temperature can minimize thermal stress and also reduce the deformation of the substrate. Most researches on cold-spray have focused on micro scale coating, but our research team tried to apply this method to macro scale deposition. The macro scale deposition causes deformation of a thin substrate which is usually convex to the deposited side. In this research, the main cause of the deformation was investigated using 6061-T6 aluminum alloy and properties of deposited aluminum layer such as coefficient of thermal expansion, Elastic modulus, hardness, electric conductivity were measured. From the result of the analysis, it was concluded that compressive residual stress was the main reason of substrate deformation while CTE had little effect.

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The Fabrication of PVDF Organic Thin Films by Physical Vapor Deposition Method and Their Electrical Conductivity Phenomena (진공증착법을 이용한 PVDF 유기박막의 제조와 전기전도현상)

  • 임응춘;이덕출
    • Electrical & Electronic Materials
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    • v.10 no.3
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    • pp.217-225
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    • 1997
  • In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

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Preparation of LaGaO3 Based Oxide Thin Film on Porous Ni-Fe Metal Substrate and its SOFC Application

  • Ju, Young-Wan;Matsumoto, Hiroshige;Ishihara, Tatsumi;Inagaki, Toru;Eto, Hiroyuki
    • Journal of the Korean Ceramic Society
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    • v.45 no.12
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    • pp.796-801
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    • 2008
  • $LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.