• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.421-426
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• 2006

[ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.640-647
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• 1995

In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Fire Science and Engineering
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• v.21 no.4
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• pp.65-71
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• 2007

This paper is studied on a protective control system for electrical fire and electrical faults by using electrical and thermal characteristics of PTC thermistor. The PTC thermistor has characteristic or positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_3$ Ceramics of positive temperature coefficient. Also PTC thermistor shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used PTC thermistor which is protected from electrical fire due to electric short circuit faults or overload faults. Some experimental results of the proposed electric safety control apparatus are confirmed to the validity of the analytical results.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.7-9
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• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.380-382
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• 1995

The pressure dependence of the Curie temperature was determined in 2-dimensional like ferromagnet, MnAlGe up to a maximum pressure of 7.5 Gpa through measurements of electric resistance vs temperature curves. The pressure coefficient was positive with a considerably high rate of 9 K/GPa in the low pressure ragion, while it decreased gradually down to one order of magnitude smaller value at the maximum pressure. It was concluded that ther is an upper limit of about 550 K in the super-exchange type ferromagnetic interaction between Mn layers.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.247-250
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• 1991

In this paper, we have investigated the poling conditons depending upon the electric field and temperature for PZT ceramics with various stoichiometry prepared by wet direct method, and $MnO_2$ dopant. The electric field required for saturation polarization was plotted against temperature $(1,000/T^{\circ}K)$ so that the required field could be estimated at any given temperature by measuring the charge displaced during poling. From this curve it should be possible to predict the field required to produce maximum domain switching at temperature below the Curie temperature, when $MnO_2$ dopant was added to the PZT ceramics, the electric field required for saturation polarization was lowered than that of undoped PZT samples.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.1-10
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• 1995

Effects of calcination temperature on microstructure and electric-magnetic properties of Mg-ferrite were investigated. As the calcination temperature increase, the green density and the sintered density increase due to the enhancement of densification of calcined powder. The grain size in the sintered ferrite increases with increasing the calcination temperatures from 800 to 100$0^{\circ}C$, but decreases from 1000 to 120$0^{\circ}C$. The resistivity decreases with increasing the calcination temperatures from 800 to 110$0^{\circ}C$, but increases from 1100 to 120$0^{\circ}C$ due to the microstructure which consists of small, uniform grian size and pores at grain boundaries. Magnetization increases slightly due to the increasement of the sintered density while Curie temperature is almost constant regardless of calcination temperatures.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.51-58
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• 2008

This paper is studied on a prevention system for electrical fire and electrical faults by using electrical temperature characteristic of PTC thermistor. The PTC thermistor has characteristic of positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_3$ ceramics of positive temperature coefficient. Also PTC shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used with temperature sensor of PTC thermistor. The proposed prevention system will prevent electrical fires due to electric short circuit faults or overload faults. And the prevention system will solve the problems that circuit breakers to be commonly used at existing are happened frequently electrical fires and electrical disasters due to incapable operation, weak reliability and low speed response. Some experimental results of the proposed apparatus are confirmed to the validity of the analytical results.