• 대한전자공학회논문지TC
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• 제40권5호
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• pp.187-196
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• 2003

사각 마이크로스트립 패치 안테나의 입력 임피던스와 방사패턴에 대한 공기 갭과 이방성 기판의 영향을 적분 방정식 공식에 사용하여 연구하였다. 갈러킨 모멘트법을 사용하여 적분 방정식을 해석함으로서 입력 임피던스와 방사패턴을 얻을 수 있다. 기저함수의 선택은 패치 위의 실제 전류밀도와 가장 유사한 형태인 정현적 기저함수를 선택하였다. 전사모의 실험결과로부터 공기 갭의 두께, 기판의 이방성 비와 이방성 기판의 비유전율 변화에 따른 입력 임피던스와 방사패턴의 변화를 나타내었다.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.36-37
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• 2006

Both negative and positive substrate bias effects on the structural properties and field-emission characteristics are investigated. carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. Characterization using various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of CNTs grown can be changed and controlled by the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negative biasing would be more effectively role in the vertical-alignment of CNTs compared to positive biasing. However, the CNTs grown under the positively bias condition display much better electron emission capabilities than those grown under negative bias or without bias. The reasons for all the measured data regarding the structural properties of CNTs are discussed to confirm the correlation with the observed field-emissive properties.

• 한국군사과학기술학회지
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• 제7권1호
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• pp.34-46
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• 2004

Copper films were prepared by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The DC bias is connected to the electrode which placed 1∼3cm above the polymer substrate. The pulse electrical field around the electrode attracts the positive charged copper ions generated from the dissociation of copper precursor, $Cu(hfac)_2$, under ECR plasma. Condensation of supersaturated copper ions in the space between the electrode and substrate, makes it possible to deposit copper film on the polymer substrate even at room temperature. In this study, optimization of the electrode configuration was carried out in order to obtain the uniform films. The uniformity of the deposited films were closely related to the parameters of electrode geometry such as electrode shape, thickness, grid size and the spacing between electrodes. The most uniform copper film was observed with the electrode that enabled uniform electrical field distribution across the whole dimension of electrode.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.669-673
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• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.182-188
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• 2001

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• 한국표면공학회지
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• 제30권2호
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• pp.93-103
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• 1997

High temperature materials used in the elevated temperature and corrosive atmosphere must have the good oxidation resistance and preserve their own mechanical properties simultaneously. For the oxidation resistance, it is very important to form a protective oxide scale such as $Al_2O_3$ or $Cr_2O_3$ on the substrate. However, the additions of protective oxide forming elements such as Cr and Al in the alloy to enhance its oxidation resistance are limited due to the deleterious effects on their mechanical properties. PECVD(P1asma Enhanced Chemical Vapor Deposition) coating processes were employed to improve the oxidation resistance at high temperature. Cr and/or A1 were coated on the substrates of Ni and Inconel 600 at various temperatures of 400, 500, $600^{\circ}C$ and at different conditions of specimen surfaces. Then, coated specimens were exposed to isothermal and cyclic oxidation conditions in air at 1000 and $1100^{\circ}C$. In order to enhance the adhesion between the substrate and coated layer, heat treatments of the coated specimens were conducted in a vacuum. At isothermal oxidation experiments, Al-coated Ni specimen showed better oxidation resistance than pure Ni. At cyclic oxidation experiments at $1000^{\circ}C$. Cr and Al-coated specimen showed better oxidation resistance. Cr-coated Inconel 600 had also showed better oxidation resistance due to Cr in the substrate. By PECVD coating process, oxidation resistance could be improved, but it was not improved as expected due to the weakness of the adhesion between the substrate and the coated layer.

• 한국균학회지
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• 제24권2호통권77호
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• pp.89-92
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• 1996

폐면을 이용한 느타리버섯(Pleurotus ostreatus (Fr.) Quel)의 가을재배에서 배지량에 따른 자실체 수량과 초발이 소요일수에 미치는 영향을 시험한 결과 전 배지 공히 배지량이 증가할수록 수량이 증가되었으며, 그 중 폐면 + 볏짚 (6 : 4, V/V) 혼합처리가 증수특이 가장 컸으며$(10{\sim}22%)$, 폐면단용처리가 입상량간 증수특이 가장 완만하였다$(7{\sim}15%)$. 초발이 소요일수는 입상량이 적을수록 빨랐고, 특히 왕겨혼합처리(5 : 5, V/V) $50\;kg/m^2$가 다소 빠른 경향이었다.

• 상하수도학회지
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• 제8권2호
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• pp.25-34
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• 1994

In this research, investigations were made on the effect of type and load of organic substrate on phosphorus release. Reactors of three different sizes were operated, being fed on five kinds of organic substrates. The quantitative analyses were made on phosphorus release and substrate utilization under anaerobic condition. The molar ratios of the uptaken organic substrate to the released phosphorus were 0.5 with acetate, 0.6 with glucose, 0.8 with glucose/acetate, and 1.2 with glucose/acids, respectively. The phosphorus release was inhibited at the higher organic load than the normal at stead state. Both acetate and acids/glucose enhanced phosphorus release- as well as uptake-rate, however, the complete phosphorus removal was achieved after the microbial adaptation to the new environment. In case with acetate, operation was hampered by the poor sludge settleability and phosphorus uptake was not enough although the phosphorus release was active. But with milk/starch, the phosphorus release and uptake was well developed even though phosphorus release was not comparatively high. From this study, it was concluded that organic substrates, such as glucose seemed to be converted fatty acids after fast bio-sorption, followed by concurrent uptake of these acids by excess phosphorus removing bacteria.