• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.5
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• pp.193-193
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• 2003

This Paper analyses several model-order reduction methods and then proposes an improved n model and a new delay calculation method to be used in analyzing RC-class interconnects, which does not involve moment calculation processes. The proposed delay calculation method has been derived by combining the unproved $\pi$ model, the concept of effective capacitance and Elmore delay. This method has an advantage in that it can be applied in the calculation of end-to-end delay as well as incremental delay.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.5
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• pp.193-200
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• 2003

This Paper analyses several model-order reduction methods and then proposes an improved n model and a new delay calculation method to be used in analyzing RC-class interconnects, which does not involve moment calculation processes. The proposed delay calculation method has been derived by combining the unproved $\pi$ model, the concept of effective capacitance and Elmore delay. This method has an advantage in that it can be applied in the calculation of end-to-end delay as well as incremental delay.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.6
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• pp.1297-1303
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• 2003

This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an effective isolation strategy for removing noise and signal coupling, ESD of each sensor pixel. The 128${\times}$l44 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1033-1034
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• 2005

High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.4
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• pp.186-191
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• 2012

DC Bus Electrolytic capacitors have been widely used in power conversion system because they can achieve high capacitance and voltage ratings with volumetric efficiency and low cost. This type of capacitors have been traditionally used for filtering, voltage smoothing, by-pass and other many applications in power conversion circuits requiring a cost effective and volumetric efficiency components. Unfortunately, electrolytic capacitors are some of the weakest components in power electronic converter. Many papers have proposed different methods or algorithms to determinate the ESR and/or capacitance C for fault diagnosis of the electrolytic capacitor. However, both ESR and C vary with frequency and temperature. Accurate knowledge of both values at the capacitors operating conditions is essential to achieve the best reference data of fault judgement. According to parameter analysis, the capacitance increases with temperature and the ESR decreases. Higher frequencies make the ESR and C to decrease. Analysis results show that the proposed electrolytic capacitor parameter estimation technique can be applied to reference signal of capacitor diagnosis systems successfully.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.232-238
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• 2013

In this paper we describe the maximum energy transfer of CSA(Capacitive Switching Antenna). CSA which is radiated antenna system contain energy storage and switch, antenna needs to high voltage source for electrical field radiation experiment. In this experiment we employed Marx generator as a charging source. CSA can radiate electrical field more efficiently by varying antenna capacitance. The electromagnetic generation system which was using CSA has some advantages which are more simple and more effective compared to exist system. We evaluated the performance of electromagnetic wave generating system using CSA. As a result UWB gain of system is 0.47, It is higher level than exist system is 0.3. Radiated electrical field strength at 1m is 70kV/m. It is measured by D-dot sensor and gap distance is 20mm. Center frequency of CSA is approximately 25MHz. When vary the antenna gap distance from 50mm to 20mm, we can find the radiation field strength is decrease and antenna center frequency is increased. We also simulated the energy transfer efficiency to compare with experiment result. Consequentially, CSA needs to appropriate capacitance which is similar value from marx generator for maximum energy transfer, and gap is less than 1mm to increase the CSA capacitance.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1530-1533
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source is under operation for 2.5-GeV electron linear accelerator in Pohang Light Source(PLS) linac. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are required for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider(CVD) unit is intended for the measurement of beam voltage of 400 kV generated from the pulsed klystron-modulator system. Main parameter to determine the standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will discuss the analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance and oil temperature variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.78-78
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• 2009

In this study, multilayer piezoelectric ceramics was manufactured using the PMW-PNN-PZT ceramics. Then, their physical characteristics for applicaton of electric power generation were investigated according to the numbers of multilayer. With increasing the numbers of multilayer, effective electromechanical coupling factor($k_{eff}$) and capacitance were decreased and increased, respectively.