• Journal of Technologic Dentistry
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• v.21 no.1
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• pp.43-53
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• 1999

The mechannical properties and corrosion resistance of alloy added commercially pure titanium for dental implants have been investigated. Ti, To-65Zr, Ti-10.1Ta and Ti-17Sn alloys were melthed in arc furnace and the corrosion resistance of Ti alloys was evaluated by anodic polarization test. The microstructure and mechanical properties of Ti alloy were analysed by optical micrograph. hardness tester and instron. In isothermal test, Ti-10.1Ta and Ti-17Sn alloys exhibited the best oxidation resistance below $1100^{\circ}C$. Ti65Zr, Ti-10.1Ta and Ti-17Sn alloys showed better rockwell hardness compared with commercially pure. Ti As the result of the anodic polarization test in 5%HCl, it 5%HCl, it was known knows that Ti-65Zr, alloy showed a rapid decrease in current density at higher potenial in comparision with other Ti alloys.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.81-89
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• 2022

The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150℃ with a current density of 1.3×10⁵ A/cm² conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni₃Sn₄ IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni₃Sn₄ IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.34-41
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• 2003

Effects of additives and plating conditions of high speed electroplating were investigated. The Sn content in electrodeposit was highly decreased with increasing current density from $10A/dm^2$ to $50A/dm^2$, and the current efficiency on the cathode was decreased. The carbon content in the electrodeposit was decreased with increasing current density from $10A/dm^2$ to $30A/dm^2$, however the carbon content was highly increased in the range of $40A/dm^2$$∼50A/dm^2$. The formation of tetravalent tin and stannic oxide sludge was prevented by the addition of gallic acid in the bath. The changing of Sn content in the electrodeposit is caused by the addition of gallic acid.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Journal of Korea Foundry Society
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• v.11 no.6
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• pp.463-474
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• 1991

The effect of $0.01{\sim}0.10%$ Sb and Sn on the wear resistance of ductile cast iron was investigated. The hardness was increased with Sb to 0.10%, but the elongation and the impact value were decreased. The tensile strength was increased with up to 0.05% Sb, however decreased with $0.05{\sim}0.10%$ Sb. The hardness and the tensile strength were increased and the elongation was decreased with up to 0.10% Sn. The nodularity of graphite was decreased with above 0.08% Sb however Sn had no effect on that. When the maximum compressive stress was low ($42kg.f/mm^2$), the weigth loss was decreased with increased hardness and when that was high ($54kg.f/mm^2$ and $65kg.f/mm^2$), the weight loss did not depend upon the hardness. The pearlite stabilization with Sb and Sn increased with the wear resistance of ductile cast iron.

• Journal of Korea Foundry Society
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• v.32 no.6
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• pp.289-295
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• 2012

Mg-Al-Sn-Si system alloy, as a promising cheap heat-resistant Mg alloy for automobile engine part, has been investigated. Refinement of microstructure and precipitation of thermally stable secondary phases are important goal for the design of heat-resistant Mg alloy. In this study, the effect of Ce on the microstructure and room temperature mechanical properties of Mg-Al-Sn-Si alloy was investigated. High thermally stable $Mg_2Si$ phases in Mg-Al-Sn-Si alloy is very useful intermetallic compound. However, the $Mg_2Si$ phases often result in poor mechanical properties due to the coarse chinese type $Mg_2Si$ phases. The experimental specimens were fabricated by fluxless melting under $CO_2+SF_6$ atmosphere and poured into the permanent pre-heated at $200^{\circ}C$. It was told that Ce addition can modify $Mg_2Si$ phases and refine microstructure and improve the tensile strength, yield strength and elongation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.2-203.2
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• 2013

Hydrothermally grown ZnO nanorods were synthesized with various Sn contents on quartz substrates, ranging from 0 to 2.5 at% in increment 0.5 at%. Scanning electron microscopy (SEM) and ultraviolet (UV)- visible spectroscopy were used to determine the effect of Sn doping on the structural and optical properties. In the SEM images, the nanorods have hexagonal wurzite structure and the diameter of the nanorods increase with increase in the Sn contents. The optical parameters of the Sn-doped ZnO nanorods such as the absorption coefficients, optical bandgaps, Urbach energies, refractive indices, dispersion parameters, dielectric constants, and optical conductivities were gained from the transmittance and reflectance results. In the PL spectra, the NBE peaks in the UV region decrease and blue-shift with increase in the Sn contents. In addition, the DLE peaks in the visible region of the nanorods shift toward low-energy region when the ZnO nanorods doped with various Sn contents.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of Korea Foundry Society
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• v.35 no.2
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• pp.36-43
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• 2015

In this study, the influences of aluminum and tin additions (individual and combined) on corrosion behavior of magnesium alloy have been determined. The studied alloys were fabricated by permanent mold casting method to measure the corrosion properties, a potentiodynamic test, hydrogen evolution test and immersion test were carried out in a 3.5% NaCl solution at pH 7.2. From the results of microstructure analysis, the Mg-9Al-1Zn alloy was found to be composed of ${\alpha}$-Mg and rod-like $Mg_{17}Al_{12}$ phase and the Mg-5Sn-5Al-1Zn alloy was found to be composed of ${\alpha}$-Mg, rod-like $Mg_{17}Al_{12}$ and $Mg_2Sn$ phases. In the case of the Mg-9Sn-1Zn alloy, the microstructure was composed of ${\alpha}$-Mg and eutectic $Mg_2Sn$ phase. With Sn addition (individual and combined), the corrosion resistance of the Mg alloys improved.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².