• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2237-2242
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• 2011

Anomalous scaling behaviors such as significantly large growth exponent (${\beta}$) and small reciprocal of dynamic exponent (1/z) values for many molecular crystalline thin films have been reported. In this study, the variation of scaling exponent values and consequent growth behaviors of molecular thin films were more quantitatively analysed using a (1+1)-dimensional surface lateral diffusion model. From these simulations, influence of step edge barriers and grain boundaries of molecular thin films on the various scaling exponent values were elucidated. The simulation results for the scaling exponents were also well consistent with the experimental data for previously reported molecular thin film systems.

• Journal of the Korea Furniture Society
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• v.10 no.2
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• pp.29-36
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• 1999

During a radio-frequency/vacuum plus press drying process of some hardwood veneers for decoration we investigated the effect of a grain and thickness of a veneer sheet on drying rates, variations of final moisture content within a bundle of veneer sheets, and formation of checking, end waving, and burning mark. About thirty three hundreds sheet of veneer could be dried in sixty five hours from green to in0-use moisture content, and a final moisture content was significantly effected by initial moisture content of veneer. There were nearly variations in a final moisture content among the veneer sheets in the same bundle. A checking was never found in a edge-sliced veneer, and very slight in a flat-sliced veneer of ash and red oak. There were no end waving and no burning mark in all veneer sheets.

• Journal of the Korean institute of surface engineering
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• v.31 no.1
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• pp.24-33
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• 1998

Effects of pH and supporting salts on the characteristics of electrogalvanzied coating in sulfate bath are investigated. The fine grain size is obtained and the whiteness with the amount of supporting salts or pH increased at more than current density of 100A/$dm^2$<\TEX>, With supporting salts increased, the electro-conductivity of the bulk solution increases and the cell voltage decreases, while the width of the cathode burned edge gets wider because it seems that the increased overpotential the vicinity of cathode causes the decreases, of limiting current density. When the amount of supporting salts or pH of sulfate bath decreases, the zinc crystals have preferred orientation (001) planes. However when the amount of supporting salts or pH increase, the crystal texture has less (001) planes and gets to have random crystal planes.

• Journal of the Korean Wood Science and Technology
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• v.17 no.4
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• pp.83-88
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• 1989

목재의 섬유방향에 경사진 균열의 모-드I과 모-드II의 혼합모-드파괴시의 파괴거동을 조사하기 위하여 라왕(Shorea Spp.)의 LA시스템에 있어서 서로 다른 경사각도를 가진 SEN시험편(Single edge notch specimen)에 대하여 휨 시험을 행하였다. 얻이진 결과는 혼합모-드파괴시, 모-드I응력확대계수$K_I$과 모-드II응력확대계수$K_II$간에 일정한 상호작용이 존재한다는 것을 나타내었다. 또한, 모-드I과 모-드II의 임계응력확대계수(Critical stress intensity factor) $K_{IC}$와 $K_{IIC}$ 이용하여 혼합모-드파괴시의 $K_I$과 $K_II$간의 상호관계를 규정할 수 있었으며, 이미 보고된 여러 실험식과 본 실험결과를 비교하여 가장 적합한 관계로서 아래와 같은 관계를 얻을 수 있었다.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.158-160
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• 2007

The butt and lap configurational friction stir welding of type 304 stainless steel was conducted in this study. The sound joints were obtained by WC tool. As the welding distance increased, tool deformation gradually increased at the pin edge. The discoloration by oxidation was observed at the top surface of the joint, a sufficient heat-input was required to avoid the welding defect owing to the lack of stirring at the welding start point. Very fine grains were observed in the stir zone, and the grain coarsening was not observed in the heat affected zone.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.399-399
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• 2011

We studied the structural and optical characterization of zinc sulfide (ZnS) thin films by RF magnetron sputtering on glass substrates. The substrate temperature was varied in the range of 100$^{\circ}C$ to 400$^{\circ}C$. The XRD analyses indicated that ZnS films had cubic structures with (111) preferential orientation and grain size varied from 20 to 60 nm, increasing with substrate temperatures. The optical properties were carried out by UV-visible spectrophotometer. Transmission measurement showed that the films had more than 70% transmittance in the wavelength larger than 400 nm, and the absorption edge shifted to shorter wavelength with the increase of substrate temperatures.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.331-335
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• 1998

R-curve, of three kinds of silicon nitride-based ceramics were measured, using single edge notched beam (SENB) method at room and at elevated temperatures, up to $1200^{\circ}C$. Stable fraacture was seen on ceramic materials with SENB specimens if the machined notch is deep enough, even though the crack resistance did not increase with crack length. Hot pressed silicon nitride did not show the rising R-curve behavior at room temperature, but it showed some rising at $1000^{\circ}C$ and above. Si3N4 reinforced with SiC whiskers showed no rising behavior at room and elevated temperatures, as it has smaller grain size, compare to the monolithic specimen. Gas pressure sintered silicon nitride had very large and elongated grains, and it showed rising R-curve even at room temperature. However, it showed some creep behavior at $1200^{\circ}C$ and the calculated R-curve on this condition did not show a good result. We cannot apply this technique on this condition for obtaining the R-curve.

• Ceramist
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• v.21 no.2
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• pp.49-58
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• 2018

Metal oxide based materials have been widely used to fields of electrochemical applications. Recently, various type of defects from microstructures of metal oxides and their nanocomposites have been raised as the important material design factors for realizing highly improved electrochemical properties. Previous experimental and theoretical works have suggested that controlling the reaction activity and kinetics of the key electrochemical reactions by activated interfaces originating from the defect sites can play an important role in achieving the robust energy storage and conversion. Therefore, this paper focuses on the role of defect-controlled metal oxide materials such as doping, edge-sites, grain boundaries and nano-sized pores for the high performances in energy storage devices and electrocatalysts. The research approaches demonstrated here could offer a possible route to obtain noble ideas for designing the metal oxide materials for the energy storage and conversion applications.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.739-742
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• 2000

Nanostructured ZnS thin films were grown on the slide glass substrate by the chemical bath deposition using an aqueous so1ution Of ZnSO$_4$and CH$_3$CSNH$_2$at 95$^{\circ}C$. The average grain sizes of the ZnS thin film estimating from the Debye-Scherrer formula are 4.8 nm. The optical transmittance edge of the ZnS thin films (4.0 eV) was shifted to the shelter wavelength compared with that of the bulk ZnS (3.67 eV) due to the quantum size effects. The ZnS thin films showed a strong photoluminescence intensity and a sharp emission band from 410 to 480 nm 3t room temperature. The PWHM of photoluminescence peak was about 40 nm. For the viloet(410 nm) and blue(480 nm) emission of the ZnS thin films, the temperature dependence can be described by an Arrhenius equation with an activation energy of 168 and 157 meV, respectively.