• Journal of Welding and Joining
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• 제33권5호
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• pp.26-30
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• 2015

Hastelloy X in this study was applied in jet engine F-15 air fighter as shroud to isolate the engine from outer skin. After 15 years operation at elevated temperature the mechanical properties decreased gradually due to the precipitation of continues second phases in the grain boundaries and precipitated inside the grain. The crack happened at the edge of the shroud due to the thermal and mechanical stress from jet engine. Selective TEM analysis found that the grain boundaries consist of $M_{23}C_6$ carbide, $M_6$ Ccarbide and small percentage of sigma(${\sigma}$) phase. Furthermore, it was confirmed the nano size of ${\sigma}$ and miu (${\mu}$) phase inside the grain. In this study, it was investigated the microstructure of the degraded shroud component and HAZ of repair welded shroud. In the HAZ, it was observed the dissolution of the $M_{23}C_6$ carbides and smaller precipitates, the migration of the undissolved larger $M_{23}C_6$ carbide and $M_6$ Ccarbide. It is also observed the liquation due to the simply melt of the segregated precipitates in the grain boundaries. Interestingly, the segregated second phases which simply melt in the grain boundaries more easily happened at higher heat input welding condition. High temperature tensile test was done at $300^{\circ}C$, $700^{\circ}C$ and $900^{\circ}C$. It was obtained that the toughness of welded sample is lower compare to the non-welded sample. The solution heat treatment at $1170^{\circ}C$ for 5 minutes was suggested to obtain a better mechanical properties of the shroud. The high cycle fatigue number of the repair welded shroud shows a much lower compare to the shroud. In addition, the high cycle fatigue number at room temperature after solution heat treatment was almost double compare to the before solution heat treatment under 420-500MPa stress amplitude. However, the high cycle fatigue number of repaired welded sample was shown a much lower compare to the non- welded shroud and solution treated shroud. One of the main reasons to decrease the tensile strength and the high cycle fatigue properties of the repair welded shroud is the formation of the liquid phase in HAZ.

• 한국재료학회지
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• 제4권6호
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• pp.626-637
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• 1994

Ti-6Ai-4V 합금의 미세조직을 용체화처리온도 및 냉각속도만의 변화로서 Widmanstatten 조직과 이중조직을 얻은 후 이들 미세조직과 인장성질고의 비교. 검토를 통해서 최적 열처리 방안을 설정하고자 하였다. 그 결과 Widmanstatten 조직에 있어서는 열처리온도나 냉각속도에 따라 복잡하고 무질서한 dege형상의 $\alpha$상 및 등축화된 $\alpha$상으로변화시킬 수 있었으며, $\alpha$+$\beta$ 영역에서 2중 용체화 처리의 경우 1차 및 2차 용체화처리 온도가 낮을수록 aspect비는 작아짐을 알 수 있었다. 인장성질에 있어서 Widmanstatten 조직은 이중조직에 비해 강도는 감소하고 연성성질 또한 크게 감소하였으며, 파단양상 Widmanstatten 조직의 경우 준벽개와 dimple형 파단양상이 함께 나타나는 반면 이중조직은 연성파괴를 나타내었다. 또한 이중조직의 파단면을 인장축에 수직인 내부균열영역과 45˚ 정도의 전단각을 갖는 shear lip영역으로 나누어 관찰할 수 있었다.

• 한국도로학회논문집
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• 제19권5호
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• pp.107-115
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• 2017

PURPOSES : The piezoelectric energy road analysis technology using a three-dimensional finite element method was developed to investigate pavement behaviors when piezoelectric energy harvesters and a new polyurethane surface layer were installed in field conditions. The main purpose of this study is to predict the long-term performance of the piezoelectric energy road through the proposed analytical steps. METHODS : To predict the stresses and strains of the piezoelectric energy road, the developed energy harvesters were embedded into the polyurethane surface layer (50 mm from the top surface). The typical type of triaxial dump truck loading was applied to the top of each energy harvester. In this paper, a general purpose finite element analysis program called ABAQUS was used and it was assumed that a harvester is installed in the cross section of a typical asphalt pavement structure. RESULTS : The maximum tensile stress of the polyurethane surface layer in the initial fatigue model occurred up to 0.035 MPa in the transverse direction when the truck tire load was loaded on the top of each harvester. The maximum tensile stresses were 0.025 MPa in the intermediate fatigue model and 0.013 MPa in the final fatigue model, which were 72% and 37% lower than that of the initial stage model, respectively. CONCLUSIONS : The main critical damage locations can be estimated between the base layer and the surface layer. If the crack propagates, bottom-up cracking from the base layer is the main cracking pattern where the tensile stress is higher than in other locations. It is also considered that the possibility of cracking in the top-down direction at the edge of energy harvester is more likely to occur because the material strength of the energy harvester is much higher and plays a role in the supporting points. In terms of long-term performance, all tensile stresses in the energy harvester and polyurethane layer are less than 1% of the maximum tensile strength and the possibility of fatigue damage was very low. Since the harvester is embedded in the surface layer of the polyurethane, which has higher tensile strength and toughness, it can assure a good, long-term performance.

• 한국강구조학회 논문집
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• 제27권3호
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• pp.347-357
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• 2015

본 연구에서는 지진모의실험으로 비보강 선설치앵커의 전단에 대한 콘크리트 파열파괴강도를 평가하기 위한 실험 연구를 수행하였다. 이를 위해 앵커 직경 30mm, 연단거리 150mm, 매입깊이 240mm인 비균열 시험체와 전단하중에 수직 및 수평 방향 균열콘크리트 시험체들에 대해 각각 실험을 수행하였다. 지진모의실험 시 동적 가력은 CSA N287.2, ACI 355.2와 ETAG 001 기준을 참조하여 결정하였으며 이후 파괴 시까지 정적 재하를 실시하였다. 비균열 및 균열콘크리트 모두 지진모의실험에 의한 저항강도는 각각 정적 강도와 거의 동등한 수준이었다. 한편, 콘크리트 파괴단면의 깊이는 $8d_0$에 모두 미치지 못하였으며 이로부터 기존 강도식에 비해 유효지압길이를 고려하지 않는 ACI 318-11의 수정강도식이 콘크리트 파열파괴강도를 적절하게 평가하는 것으로 분석되었다.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.7-15
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• 2012

최근 모바일 기기에 적용되는 반도체 패키지는 초소형, 초박형 및 다기능을 요구하고 있기 때문에 다양한 실리콘 칩들이 다층으로 수직 적층된 패키지의 개발이 필요하다. 패키지 및 실리콘 칩의 두께가 계속 얇아지면서 휨 현상, 크랙 및 여러 다른 형태의 파괴가 발생될 가능성이 많다. 이러한 문제는 패키지 재료들의 열팽창계수의 차 및 패키지의 구조적인 설계로 인하여 발생된다. 본 연구에서는 4층으로 적층된 FBGA 패키지의 휨 현상 및 응력을 수치해석을 통하여 상온과 리플로우 온도 조건에서 각각 분석하였다. 상온에서 가장 적은 휨을 보여준 경우가 리플로우 공정 조건에서는 오히려 가장 큰 휨을 보여 주고 있다. 본 연구의 물성 조건에서 패키지의 휨에 가장 큰 영향을 미치는 인자는 EMC의 열팽창계수, EMC의 탄성계수, 다이의 두께, PCB의 열팽창계수 순이었다. 휨을 최소화하기 위하여 패키지 재료들의 물성들을 RMS 기법으로 최적화한 결과 패키지의 휨을 약 $28{\mu}m$ 감소시킬 수 있었다. 다이의 두께가 얇아지게 되면 다이의 최대 응력은 증가한다. 특히 최상부에 위치한 다이의 끝 부분에서 응력이 급격히 증가하기 시작한다. 이러한 응력의 급격한 변화 및 응력 집중은 실리콘 다이의 파괴를 유발시킬 가능성이 많다. 따라서 다이의 두께가 얇아질수록 적절한 재료의 선택 및 구조 설계가 중요함을 알 수 있다.

• Restorative Dentistry and Endodontics
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• 제18권1호
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• pp.1-26
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• 1993

The purpose of this study was to investigate the effect of acid etching on the surface appearance and fracture toughness of five glass ionomer cements. Five kinds of commercially available glass ionomer cements including chemical curing filling type, chemical curing lining type, chemical curing metal reinforced type, light curing tilling type and light curing lining type were used for this study. The specimens for SEM study were fabricated by treating each glass ionomer cement with either visible light curing or self curing after being inserted into a rubber mold (diameter 4mm, depth 1mm). Some of the specimens were etched with 37% phosphoric acid for 0, 15, 30, 60, go seconds, at 5 minutes, 1 hour and 1 day after mixing of powder and liquid. Unetched ones comprised the control group and the others were the experimental groups. The surface texture was examined by using scanning electron microscope at 20 kV. (S-2300, Hitachi Co., Japan). The specimens for fracture toughness were fabricated by curing of each glass ionomer cement previously inserted into a metal mold for the single edge notch specimen according to the ASTME399. They were subjected to a three-point bend test after etching for 0, 30, 60, and 90 seconds at 5 minutes-, 1 hour-and 1 day-lapse after the fabrication of the specimens. The plane strain fracture toughness ($K_{IC}$) was determined by three-point bend test which was conducted with cross-head speed of 0.5 mm/min using Instron universal testing machine (Model No. 1122) following seven days storage of the etched specimens under $37^{\circ}C$, 100% humidity condition. Following conclusions were drawn. 1. In unetched control group, crack was present, but the surface was generally smooth. 2. Deterioration of the surface appearance such as serious dissolving of gel matrix and loss of glass particles occured as the etching time was increased beyond 15 s following Immediate etching of chemical curing type of glass ionomer cements. 3. Etching after 1 h, and 1 d reduced surface damage, 15 s, and 30s etch gave rough surface appearance without loss of glass particle of chemical curing type of glass ionomer cements. 4. Light curing type glass ionomer cement was etched by acid, but there was no difference in surface appearances according to various waiting periods. 5. It was found that the value of plane stram fracture toughness of glass ionomer cements was highest in the light curing filling type as $1.79\;MNm^{-1.5}$ followed by the light curing lining type, chemical curing metal reinforced type, chemical curing filling type and chemical curing lining type. 6. The value of plane stram fracture toughness of the chemical curing lining type glass ionomer cement etched after 5 minutes was lower than those of the cement etched after 1 hour or day or unetched (P < 0.05). 7. Light curing glass ionomer cement showed Irregular fractured surface and chemical curing cement showed smooth fractured surface.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.