• ETRI Journal
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• v.30 no.5
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• pp.723-728
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• 2008

In this paper, a simple transmission line model for an edge-coupled patch antenna is presented. The coupled section is modeled with a lump network which represents the mutual admittance between patches and from patch to ground. Theoretical analysis of two edge-coupled patch antenna models are compared by simulation and experiment in antennas designed to operate at the 2 GHz band. The proposed model predicts the return loss of the antenna accurately.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.11
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• pp.1100-1107
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• 2004

In this paper, a new design method fur tapped coupled-line filters has been developed. The design equations for this tapped-line filter have been obtained using a new equivalent circuit model of tapped lines. These tapped-lines replace input/output coupled lines of the conventional edge coupled-line filters, which tend to have very narrow line gaps(few mils). Therefore, tapped coupled-line filters tend to be less sensitive to filter fabrication tolerances and to be easily fabricated using milling tools. The new filter design algorithm allows very accurate filter design for frequencies up to 20 GHz and bandwidth less than 20 %.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.6
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• pp.388-395
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• 1986

Dispersion characteristics of shielded single, coupled and edge-offset microstrip structures are investigated by using hybrid mode analysis with Galerkin's method in the spectral domain. Two new basis functions for the longitudinal strip current are proposed and convergence rates of the solutions for the basis functions are compared. Current distribution of the coupled line is obtaind from that of the single line by using shift theorem of the Fourier transform. In addition, effects of off-centered inner strip conductor on dispersion are also discussed Numerical results include various structual parameters and are compared with other available data and good agreements are observed.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.371-375
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• 2003

In this paper, a new design method for coupled-line filters with tapped input/output has been developed. The design equations for this tapped filter have been obtained using a new equivalent circuit model of tapped lines. From an edge coupled-line filter, tapped lines replaces the input/output coupled lines which tend to have very narrow gaps (few mils). Therefore, tapped coupled-line filters tend to be less sensitive to filter fabrication tolerances and to be easily fabricated using milling tools. The new filter design algorithm allows very accurate filter design for frequencies less than 20 GHz and bandwidth less than 20%. Above 20 GHz, the filter performance can be optimized starting from the filter design algorithm in this paper. Simulation problems with 2-D EM tools to characterize filter performance at high frequencies have shown to be solved by providing a channel for the filter to eliminate higher order modes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1078-1082
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• 2002

In this paper, we have studied the dependence of insertion loss of a microstrip stepped impedance lowpass filter with coupled open stubs. Coupling mechanisms in the filter depend not only on the transmission line width of the filter but also the gap width of coupled open stubs and three attenuation poles are created with the proper conditions. Also edge capacitance between open stubs play an important role in having three attenuation Poles. We verify the results by obtaining [S] matrices.

• Progress in Superconductivity
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• v.2 no.2
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• pp.81-85
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• 2001

Uniformity of critical currents of YBa$_2$Cu$_3$O$_{7}$ step-edge Josephson junctions on SrTiO$_3$(100) substrates have been studied at various step-line angles. 15 identical junctions were made in series on each substrate that has a long straight step-edge line. Step-line angles studied were 0$^{\circ}$, 15$^{\circ}$, 30$^{\circ}$, and 45$^{\circ}$with respect to the crystal major axes of the substrate. Scattering of junction critical currents among the junctions on the same substrate increased with the step-line angle. Current-voltage curves showed standard resistively-shunted-junction (RSJ) characteristics in most of the 0$^{\circ}$junctions. However, the number of junctions showing RSJ behavior decreased with increasing step-line angle. Variations of detailed microstructure of the step-edge among junctions, which are coupled with the d-wave symmetry of YBa$_2$Cu$_3$O$_{7}$, are believed to be the main cause for the nonuniformity in the critical current.ent.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.39-44
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• 1994

A theoretical method has been considered for the analysis of a cylindrical edge-slot antenna which belongs to a class of circumferential slot antennas that are suitable for conformal mounting on conducting bodies of revolution. A coupled integral equation is formulated for unknown magnetic currents of both the coaxial aperture and the edge slot, and solved by the moment method. Theoretical values for reflection coefficient obtained based upon the method are compared with our experimental values and other author's results available. There arre good agreement between them.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.41-48
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• 2005

We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.783-788
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• 1996

In this paper, the high-$T_c$ , superconductor (HTS) microstrip patch antenna which is directly coupled to a microstrip transmission line is designed and the numerical solution which evaluate near electromagnetic field of HTS antenna is presented. This solution uses the interpolation function with the vector edge triangular element. The advantage of this element is the elimination of spurious solutions attributed to the lack of enforcement of the divergence condition. The results of this method have a good agreement with $TM_10$ mode in HTS microstrip patch antenna and show that the computation of resonant length considering the fringing capacitance effect at radiating edge are proper.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.