• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.359-362
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• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1119-1120
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• 2007

Nano-sized metal patterns were successfully fabricated on flexible PET substrate using nanoimprint lithography. 70nm line and space PMMA resist pattern was formed on PET substrate without residual layer by 'artial filling effect' and 20nm thin Cr metal layer was deposited by e-beam evaporation. Then, PMMA resist was selectively removed by acetone and 70nm narrow Cr pattern was formed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.24-25
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• 2007

Nano-sized metal patterns were successfully fabricated on flexible PET substrate using nanoimprint lithography. 70nm line and space PMMA resist pattern was formed on PET substrate without residual layer by "partial filling effect' and 20nm thin Cr metal layer was deposited by e-beam evaporation. Then, PMMA resist was selectively removed by acetone and 70nm narrow Cr pattern was formed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.42-47
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• 1998

We have fabricated electron-optical lens for micro E-beam system that can overcome the limitation of current E-beam lithography. Our electron-optical lens consists of multiple silicon electrodes which were fabricated by micromachining technology and assembled by anodic bonding. The assembled system was installed in UHV chamber to observe the emission characteristics of focused electrons by the electro-optical lens. We used STM(Scanning Tunneling Microscope) tip for electron source. By performing lithography with the focused electrons with PMMA(poly-methylmethacrylate) as E-beam resist. We could draw 0.13${\mu}{\textrm}{m}$ nano-scale lines.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.235-238
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• 2005

A Multiple electron beam lithography system with arrayed microcolumns has been developed for high throughput applications. The small size of the microcolumn opens the possibility for arrayed operation on a scale commensurate. The arrayed microcolumns based on of Single Column Module (SCM) concept has been fabricated and successfully demonstrated. Low energy microcolumn lithography has been operated in the energy range from 250 eV to 300 eV for the generation of nano patterns. Probe beam current at the sample was measured about >1 nA at a total beam current of $0.5\;{\mu}A$ and a working distance of $\~1\;mm$. The magnitude of probe beam current is strong enough for the low energy lithography. The thin layers of PMMA resist have been employed. The results of nano-patterning by low energy microcolumn lithography will be discussed.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.49-53
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• 1990

Laser plasma was generated by a 1 GW iodine photodissociation laser(λ=1.315${\mu}{\textrm}{m}$, E-12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in the vacuum chamber under 10-5Torr and several tens of laser shooting were necessary for sufficient exposure to the PBS resist. A speciman was put directly on the resist and located at a distance of 3cm from the X-ray source. The replicas of a mesh, spider's tread, a red blood cell were obtained by PBS resist and were analyzed by Nomarski and SEM. Two main effects of limitation in resolution, source size and Fresnel diffraction, are mentioned and compared with the experimental result. In this experiment, a resolution better than 1000A could be obtained.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.869-875
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• 1996

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

• Progress in Superconductivity
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• v.10 no.2
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.46-51
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• 1990

Laser plasma was generated by a 1GW iodine photodissociation laser ($\lambda$=1.315$\mu\textrm{m}$, E=12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in a vacuum chamber under 1D-sTorr and several tens of laser shooting were necessary for sufficient exposure for the PBS resist of 111m thickness. Aluminium was coated on the top of the resist by 0.1$\mu\textrm{m}$ thickness which acts as an X-ray filter to cut off the visible and the ultraviolet lights. A bio-specimen was put directly on the aluminium coated resist and located at a distance of 3 cm from the X-ray source. The replicas of a steel mesh, spider's web. and a red blood cell were obtained by this technique and were observed by Nomarski microscope and SEM. The limitation of its resolution is determined by the X-ray source size and Fresnel diffraction effect, and its theoretical prediction is well matched with the experimental results. In this experiment, a resolution better than 0.1$\mu\textrm{m}$ could be obtained. ained.