• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.46-46
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• 1998

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.78-86
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• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.6
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• pp.71-77
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• 2014

In this paper, we investigated the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of InGaZnO (IGZO) films grown on transparent Corning glass substrates, with a radio frequency magnetron sputtering technique. The IGZO thin films deposited at low temperature were treated with HEEBI in air at room temperature (RT) with an electron beam energy of 0.8 MeV and doses of $1{\times}10^{14}-1{\times}10^{16}electrons/cm^2$. The optical transmittance of the IGZO films was measured using an ultraviolet visible near-infrared spectrophotometer (UVVIS). The detailed estimation process for separating the transmittance of HEEBI-treated IGZO films from the total transmittance of IGZO films on transparent substrates treated with HEEBI is given in this paper. Based on the experimental results, we concluded that HEEBI with an appropriate dose of $10^{14}electrons/cm^2$ causes a maximum increase in the transparency of IGZO thin films. We also concluded that HEEBI treatment with an appropriate dose shifted the optical band gap ($E_g$) toward the lower energy region from 3.38 to 3.31 eV. This $E_g$ shift suggested that HEEBI in air at RT with an appropriate dose acts like a thermal annealing treatment in vacuum at high temperature.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.70-74
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• 1999

MgO-CaO protective layers with various composition were prepared by electron beam evaporation to improve the characteristics of conventional pure MgO thin films as a protective layer for AC-PDP. The maximum deposition rate of pure MgO was 1025 $\AA$/min and decreased with increasing [(CaO/(MgO+CaO)] ratio of evaporation starting materials. From XRD analyses, a trend of peak shift to the lower 2$\theta$ angle side was shown as CaO content increased and it stoped when the concentration of CaO was 0.13, which corresponds to the maximum solubility of CaO in MgO. The optimum composition of the protective thin films was Mg 47.1 at%, Ca 1.3 at%, O 51.6 at%, and firing voltage, memory margin and deposition rate of the film with this composition was 176 V, 0.5 and 515 $\AA$/min, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.265-265
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• 2010

고분자 소재(polycarbonate; PC)의 표면을 보호하고 광학적 특성을 유지하기 위해 산화물 다층 박막과 비정질 탄소 박막(diamond-like carbon; DLC)을 전자빔 증착(e-beam evaporation)과 이온빔 증착(ion-beam deposition)을 이용하여 고분자 소재에 코팅하였다. 전자빔 증착으로 코팅된 실리콘과 티타늄 산화물 다층 박막은 소재 표면에서 가시광선의 반사율을 낮추는 효과를 가지고 있어 다양한 광학 코팅분야에서 이용되고 있다. 비정질 탄소 박막은 경도가 높고 마찰계수가 낮기 때문에 기계부품의 수명향상을 향상하기 위해 주로 사용되며, 본 연구에서는 고분자 소재의 최상층에 코팅하여 보호막으로 이용하였다. 고분자 윈도우에 산화물 다층 박막을 코팅하면 코팅되지 않은 기판과 비교하여 투과율이 향상되었으며 보호막으로 코팅된 비정질 탄소 박막에 의해서 일어나는 투과율 저하를 부분적으로 상쇄하는 효과를 보였다. 산화물 다층 박막의 수는 광학 분야에서는 주로 5-7층을 이용하지만 고분자 소재는 코팅 공정이 길어지면 열 변형이 일어날 수 있기 때문에 산화막의 층수를 낮추는데 초점이 맞춰졌다. 5층과 3층으로 코팅된 산화물 박막 모두 투과율이 향상되었으며 3층에 비해서 5층의 투과율 향상효과가 큰 것으로 나타났다. 고분자 소재의 투과율은 평균 약 90%이었으며 산화물 다층 박막과 비정질 탄소 박막을 코팅한 후 투과율이 약 81%로 측정되었다. 비정질 탄소 박막과 산화물 다층 박막을 적절하게 설계하고 코팅한다면 고분자 소재의 보호막으로 이용될 수 있을 것으로 판단된다.

• The Korean Journal of Applied Statistics
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• v.27 no.4
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• pp.543-552
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• 2014

High bandwidth RF such as Bluetooth, GPRS, EDGE, 3GSM, HSDPA is papular in the mobile phone market. A non-conducting metal coating process requires an e-beam deposition of metal, two steps of UV hard coating primer and top coating; however, it is inefficient. We navigate to the electron beam irradiation conditions(resin surface treatment conditions) in the PC/ABS resin injection process. By analyzing the experimental results, we find the optimum development conditions for the electro deposition pre-treatment process and mass production lines using the plasma generated electron beam source.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.133-133
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• 2000

알루미늄 산화막은 알루미늄 전해 커패시터의 유전재료로 많이 사용되고 잇다. 기존의 생산 공정은 양극 산화법에 의한 산화막 형성으로 대부분이 이러한 습식 공정으로 생산되고 있다. 이 양극 산화법 방식은 장점도 있으나 폐기물이 많이 발생되는 단점이 있다. 본 연구에서는 폐기물의 발생을 획기적으로 줄일 수 있고 산화막 형성 효율을 높일 수 잇는 방식으로 activated reactive evaporation(ARE)을 도입하였다. 이 방식은 electron-beam에 의해 알루미늄을 증착시킬 때 plasma를 챔버 내에 발생시켜 활성 반응으로 알루미늄 원자가 산소와 반응하여 기판위에 Al2O3가 증착되는 것이다. 이 방식은 기계적 작동이 단순하고 증착이 되는 여러 변수들의 독립적 조절이 가능하므로 증착을 제어하기 쉽기 때문에 바로 산업 현장에서 적용될 수 있을 것으로 전망되어 본 연구에 도입하게 되었다. 기판은 유전용량을 증가시키기 위하여 알루미늄 원박을 에칭하였다. 이것은 기판으로 쓰일 알루미늄의 표면의 표면적을 증가시키기 위한 것으로, 알루미늄 전극의 표면적을 확대시키면 유전용량이 증가된다. 99.4%의 50$\mu\textrm{m}$와 60$\mu\textrm{m}$ 두께의 알루미늄 원박을 Ar 이온빔에 의해 1keV의 에너지로 20mA로 에칭을 하였다. 에칭 조건별로 에칭상태를 조사하였다. 에칭 후 표면 상태는 AFM으로 관찰하였다. 화성 실험은 진공 챔버 내의 진공을 약 10-7 torr까지 내린 후, 5$\times$10-5 torr까지 O2와 Ar을 주입시킨 다음 filament에서 열전자를 방출시키고 1.2 kV의 electrode에 의해 가속시켜 이들 기체들의 플라즈마를 발생시켰다. e-beam에서 증발된 알루미늄과 활성 반응을 이루어 기판에 Al2O3가 형성되었다. 여러 증착 변수들(O2와 Ar의 분압, 가속 전압, bias 전압 등)과 산화막의 상태 등을 XPS(X-ray photoelectron spectroscopy), AFM(Atomic Force Microscopy), XRD(X-Ray Diffraction), EXD로 조사하였다.