• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.16-20
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• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• ETRI Journal
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• 제14권1호
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• pp.52-65
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• 1992

전자선 직접묘사 (E-beam direct writing lithography) 방법을 이용하여 $0.2\mum$ 과 $0.3\mum$ 의 게이트길이를 가지는 NMOS 트랜지스터를 제작하였다. 게이트만 전자선 직접묘사 방법으로 정의하고 나머지는 optical stepper를 이용하는 Mix & Match 방식을 사용하였다. 게이트산화막의 두께는 최소 6nm까지 성장시켰으며, 트랜지스터구조로서는 lightly-doped drain(LDD) 구조를 채택하였다. 짧은 채널효과 및 punch through를 줄이기 위한 방안으로 채널에 깊이 붕소이온을 주입하는 방법과 well을 고농도로 도핑하는 방법 및 소스와 드레인에 $p^-$halo를 이온주입하는 enhanced lightly-doped drain(ELDD) 방법을 적용하였으며, 제작후 성능을 각각 비교하였다. 제작된 $0.2\mum$의 게이트길이를 가지는 소자에서는 문턱전압과 subthreshold기울기는 각각 0.69V 및 88mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance와 포화 드레인전류는 각각 200mS/mm, 0.6mA/$\mum$이었다. $0.3\mum$소자에서는 문턱전압과 subthreshold 기울기는 각각 0.72V 및 82mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance는 184mS/mm이었다. 이러한 결과는 전원전압이 3.3V일 때 실제 ULSI에 적용가능함을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.70-71
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• 2010

In this study, We fabricated FePt-based perpendicular patterned media using a selective combination of E-beam lithography and either Ar plasma etching (deposition-first process) or FePt lift-off (deposition-last process). We employed the deposition-last process to avoid chemical and structural disordering by impinging Ar ions (deposition-first process). For a patterned medium with 100 nm patterns made by this process, the out-of-plane coercivity was measured to be 5 fold larger than its in-plane value. The deposition-last process may be a promising way to achieve ultra-high density patterned media.

• 한국광학회지
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• 제15권4호
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• pp.313-320
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• 2004

위상편이 회절격자 간섭계와 이진 컴퓨터 형성 홀로그램을 제작하여 널 시스템을 구성하고 비구면형상 측정 시스템을 구축하였다. 제안하는 시스템은 비구면형상에 맞게 제작된 이진 컴퓨터 형상 홀로그램과 가시도가 조정된 위상편이 회절격자간섭계로 이루어져있다. 위상편이 회절격자간섭계는 회절격자의 홈 형상이나 간섭을 일으킬 측정광과 기준광을 바꿈으로써 가시도를 쉽게 조절할 수 있고, 높은 수준의 측정 정확도를 가지는 장점을 가지고 있다. 이진 컴퓨터 형성 홀로그램은 비구면의 정보를 통하여 컴퓨터로 수치모사한 후 전자-빔 리토그래피 장비로 제작할 수 있고, 위상편이 회절격자 간섭계, 비구면과 함께 자동곡률측정 방식으로 설치된다. 간섭계와 홀로그램을 제작한 후 비구면을 측정, 실험을 수행하고 시스템을 평가하였다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 추계학술대회 논문집
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• pp.162-165
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• 2007

AAO(Anodic Aluminum Oxidation) method has been known that it is practically useful for the fabrication of nano-structures and makes it possible to fabricate the highly ordered nano masters on large surface and even on the 2.5 or 3D surface at low cost comparing to the expensive e-beam lithography or the conventional silicon processing. In this study, by using the multi-step anodizing and etching processes, highly ordered nano patterned master with concave shapes was fabricated. By varying the processing parameters, such as initial matter and chemical conditions; electrical and thermal conditions; time scheduling; and so on, the size and the pitch of the nano pattern can be controlled. Consequently, various alumina/aluminum nano structures can be easily available in any size and shape by optimized anodic oxidation in various aqueous acids. In order to replicate nano patterned master, the resulting good filled uniform nano molded structure through electro-forming process shows the validity of the fabricated nano pattern masters.

• 전자공학회논문지D
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• 제35D권12호
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• pp.48-52
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• 1998

본 논문에서는 SOI 기판 위에 새롭게 제안된 측면 채널과 나노 점을 갖는 나노 구조의 기억소자를 제작하였다. Top-silicon의 측면이 채널영역이 되고 나노 점이 이 채널 영역의 위에 반응성 이온 식각(RIE)에 의해 형성되는 구조를 가지는 이 소자는 측면 채널(edge channel)의 너비가 SOI기판의 열산화에 의해 얇아진 top-silicon의 두께에 의해 결정되고, 나노 점의 크기는 반응성 이온 식각(RIE) 및 전자선 직접 묘화에 의해 결정된다. 제작된 나노 구조 소자의 I/sub d/-V/sub d/, I/sub d/-V/sub g/ 특성 및 -20V에서 +14V까지의 게이트 전압 영역에서 문턱전압의 변화 범위가 약 1V정도 되는 기억소자의 특성을 얻었다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 춘계학술대회 논문집
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• pp.285-287
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• 2008

AAO(Anodic Aluminum Oxidation) method has been known that it is practically useful for the fabrication of nano-structures and makes it possible to fabricate the highly ordered nano masters on large surface and even on the 2.5 or 3D surface at low cost comparing to the expensive e-beam lithography or the conventional silicon processing. In this study, by using the multi-step anodizing and etching processes, highly ordered nano patterned master with concave shapes was fabricated. By varying the processing parameters, such as initial matter and chemical conditions; electrical and thermal conditions; time scheduling; and so on, the size and the pitch of the nano pattern can be controlled. Consequently, various alumina/aluminum nano structures can be easily available in any size and shape by optimized anodic oxidation in various aqueous acids. In order to replicate nano patterned master, the resulting good filled uniform nano molded structure through electro-forming process shows the validity of the fabricated nano pattern masters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.224-227
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• 1995

The micro-patterning by a Bow energy FIB whish has been conventionally utilized far mask-repairing was investigated. Amorphous Se$\_$75/Gee$\_$25/ resist irradiated by 9[keV]-defocused Ga$\^$+/ ion beam(∼10$\^$15/[ions/$\textrm{cm}^2$]) resulted in increasing the optical absorption, which was also observed also in the film exposed by an optical dose of 4.5${\times}$10$\^$20/[photons/$\textrm{cm}^2$]. The ∼0.3[eV] edge shift for ion-irradiated film was about twice to that obtained for photo-exposed. These large shift could be estimated as due to an increase in disorder from the decrease in the sloop of the Urbach tail. For Ga$\^$+/ FIB irradiation with a relatively low energy, 30[keV] and above the amount of dose of 1.4${\times}$10$\^$16/[ions/$\textrm{cm}^2$], the irradiated region in a-Se$\_$75/Ge$\_$25/ resist was perfectly etched in acid solution for 10[sec], which is relatively a short development time. A contrast was about 2.5. In spite of the relatively low incident energy,∼0.225[$\mu\textrm{m}$] pattern was clearly obtained by the irradiation of a dose 6.5${\times}$10$\^$16/[ions/$\textrm{cm}^2$] and a scan diameter 0.2[$\mu\textrm{m}$], from which excellent results were expected fur incident energies above 50[keV] which was conventionally used in FIBL.