• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.673-678
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• 2015

Terahertz dual-band frequency selective surface filters made by perforating two different rectangular holes in molybdenum have been designed, fabricated and measured. Physical mechanisms of the dual-band resonant responses are clarified by three differently configured filters and the electric field distribution diagrams. The design process is straightforward and simple according to the physical concept and some formulas. Due to the weak coupling between the two neighboring rectangle holes with different sizes in the unit cell, good dual-band frequency selectivity performance can be easily achieved both in the lower and higher bands by tuning dimensions of the two rectangular holes. Three samples are fabricated, and their dual-band characteristics have been demonstrated by a THz time-domain spectroscopy system. Different from most commonly used metal-dielectric structure or metal-dielectric-metal sandwiched filters, the designed dual-band filters have advantages of easy fabrication and low cost, the encouraging results afforded by these filters could find their applications in dual-band sensors, THz communication systems and other emerging THz technologies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2305-2310
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• 2011

This paper describes a design of dual band balanced amplifier using a lefted handed meta-material transmission line structure for high frequency application. Meta-material transmission lines have been known to have dual band frequency responses. A dual band branch line hybrid coupler is designed using the meta-material transmission lines, and measured at first. Two identical dual band amplifiers are also designed, built and tested using the same meta-material transmission structure. The proposed dual band balanced amplifier is composed of those dual band branch line hybrid coupler and amplifiers. In order to suggest an design example, a prototype of dual band balanced amplifier is built and measured at the dual frequencies, 1800MHz($f_1$) and 2300MHz($f_2$). The simulation and measurement show that the fabricated balanced amplifier operates well at the desired dual frequencies bands with the gain of 11.12dB and 17.67dB at $f_1$ and $f_2$, respectively, with a good agreement with the simulation results.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.64-67
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• 2003

This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2268-2272
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• 2010

This letter presents that a rectenna can utilize more stable wireless power by using a new design dual band/dual polarization microstrip patch antenna and 2 stage voltage multiplier at 2.4 GHz band and 3.1 GHz band. The proposed antenna is a new microstrip patch antenna design to make impedance matching possible by using slotted capacitive coupling between the patch and $50\Omega$ feed line on a ground plane. Its advantage is that the size of the rectenna can be reduced by using $50\Omega$ feed line on the ground plane, which can be used efficiently. The dual band/dual polarization microstrip patch antenna shows circular polarization at 2.4 GHz band and linear polarization at 3.1 GHz band. Under -10 dB return loss, The dual band/dual polarization microstrip patch antenna obtains 340 MHz bandwidth as 2.23~2.57 GHz and 375 MHz bandwidth as 2.95~3.325 GHz. Also, 2 Stage Voltage multiplier is possible to operate at 2.4 GHz band and 3.1 GHz band. The designed retenna can usually obtain wireless power at both 3.1 GHz band, and 2.4 GHz band applications such as Wi-Fi, Bluetooth, Wireless LAN, etc. So more stable wireless power can be utilized at the same time.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.277-280
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• 2005

In this paper, we propose a frequency synthesizer for dualband repeater. The dual-band RF technology for applications to the wireless repeater for CDMA and WCDMA mobile communications has been developed in this paper. The dualband PLL module consisted of dual-band VCO and one PLL IC has been developed. The main technological efforts for the dual-band PLL module is to suppress the intermodulation distortion by applying the miniature ceramic filter using the slow wave characteristics. The dual-band miniature RF module including dual-band PLL module and one MCU controller is very attractive for applications to the miniature dual-band RF mobile repeaters.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.24-29
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• 2001

In this paper, the wideband microstrip antennas for the PCS & IMT-200O dual band are studied. Experimental and simulation results on the dual band antenna are presented. Simulation results are in good agreement with measurements. The experimental and simulation results confirm the wideband characteristics of the antenna. The studied antenna satisfies the wideband characteristics that are required characteristics for above 420 MHz impedance bandwidth for the PCS & IMT-2OO0 dual band antenna. In this paper, through the designing of a dual band antenna, we have presented the availability for PCS & IMT-20O0 base station antenna.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.15-20
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• 2002

In this project, we hale developed various techniques for subminiaturization, surface implementation, high frequency design, small-size SMD, performance test and application of the Dual PLL module, which is a core component for the personal communication systems. We also obtained base techniques for the next-generation Dual PLL module design and fabrication techniques for an internationally competitive subminiature Dual PLL module.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.767-772
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• 2006

The receiver of this paper is Dual-band monopulse type for prototype of tracking radar. Localization of radar technology is an issue of SamsungThales and go into development. Dual-band radar in comparison with Single-band radar requires higher cost and power consumption but there are many advantages of dealing with jamming, detection range, image signal rejection, cloud-rain influence, clutter, resolution. The receiver is comprised of X-band RF head module, Ka-band RF head module and common IF module. Each signal of X-band and Ka-band is selected by the switch in If module. Phase shifter in IF module of local stage controls the phase of sum, azimuth, elevation channel. In the test result, gain is $40{\pm}3 dB$, isolation of transmitter/receiver is 39 dBc, dynamic range is 110 dB and noise figure of each channel is 4.5dB and 6.9dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.385-386
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• 2008

In this paper, a simple dual band filter chip is designed with 0603 case size using IPD technology. The dual-band filter achieves high frequency band at 2.5 GHz and low frequency band at 1.8 GHz. The insertion losses in high frequency band and low frequency band are -0.195 dB and -0.146 dB, respectively. The return losses in these bands are -22.7 dB and -22.8 dB, respectively. The simple dual-band filter based on SI-GaAs substrate is designed within die size of about 1.3 $mm^2$.

• Journal of electromagnetic engineering and science
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• v.18 no.2
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• pp.73-77
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• 2018

This paper proposes a dual-band bandpass filter using stepped-impedance resonators (SIRs) with parallel coupled structures. The proposed filter adopts U-shaped SIRs with parallel coupled lines (PCLs) that have interdigital and comb-line shorted ends. The central PCLs build an upper passband and a transmission zero, and the two U-shaped SIRs build a lower passband. Four resonators and coupling structures are theoretically analyzed to derive its scattering parameters. A novel dual-band bandpass filter is designed and fabricated using the induced scattering characteristics. The measured results show that the fabricated dual-band bandpass filter has an insertion loss of less than 1.02 dB in the lower band of 2.45 GHz and of 3.01 dB in the upper band of 3.42 GHz, and a band-to-band isolation of more than 40 dB, from 3.14 to 3.2 GHz.