• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.13 no.9
• /
• pp.4294-4301
• /
• 2012

The inelastic response characteristics of the standard school buildings depending on selection of hysteresis models and variable earthquakes are studied. Three earthquake records of El-centro, Santa-Monica, Taft in accordance with KBC2009 standard and four inelastic hysteresis models such as Degrading tri-linear model, Clough model, Takeda model, and Modified Takeda model are used. The inelastic response characteristics such as story shear force, story drift ratio, story displacement are reviewed. As results, El-centro earthquake shows large response in transverse direction and Santa Monica earthquake shows larger response in longitudinal direction on the contrary. Taft earthquake shows less variation of story drift ratio and story displacement for all hysteresis models and stable response.

• The Journal of Korea Robotics Society
• /
• v.8 no.1
• /
• pp.29-36
• /
• 2013

This paper presents a sensitivity optimization of a MEMS (microelectromechanical systems) gyroscope for a magnet-gyro system. The magnet-gyro system, which is a guidance system for a AGV (automatic or automated guided vehicle), uses a magnet positioning system and a yaw gyroscope. The magnet positioning system measures magnetism of a cylindrical magnet embedded on the floor, and AGV is guided by the motion direction angle calculated with the measured magnetism. If the magnet positioning system does not measure the magnetism, the AGV is guided by using angular velocity measured with the gyroscope. The gyroscope used for the magnet-gyro system is usually MEMS type. Because the MEMS gyroscope is made from the process technology in semiconductor device fabrication, it has small size, low-power and low price. However, the MEMS gyroscope has drift phenomenon caused by noise and calculation error. Precision ADC (analog to digital converter) and accurate sensitivity are needed to minimize the drift phenomenon. Therefore, this paper proposes the method of the sensitivity optimization of the MEMS gyroscope using DEAS (dynamic encoding algorithm for searches). For experiment, we used the AGV mounted with a laser navigation system which is able to measure accurate position of the AGV and compared result by the sensitivity value calculated by the proposed method with result by the sensitivity in specification of the MEMS gyroscope. In experimental results, we verified that the sensitivity value through the proposed method can calculate more accurate motion direction angle of the AGV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.5
• /
• pp.403-409
• /
• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.22-23
• /
• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• Journal of Institute of Control, Robotics and Systems
• /
• v.19 no.10
• /
• pp.947-954
• /
• 2013

This article focuses on a hemispherical resonator gyro driven by the Coriolis effect. The operational principle of resonator gyros and mathematical models are introduced. These models are useful to explain the behavior of a resonator and to design controllers. Several control tests of a resonator have been done. A resonator has been excited by electromagnets controlled by a computer. Its amplitude has been adjusted by a PI control. The transient response is matched with a simulation result based on a mathematical model. A vibrating pattern may drift due to non-uniform factors of a resonator. The drift of the vibrating pattern is controlled and aligned to a reference direction by a PI control. These results are very useful to understand the behavior of resonator gyros and to design advanced control algorithm for better performance.

• Journal of Korean Society of Coastal and Ocean Engineers
• /
• v.6 no.2
• /
• pp.150-156
• /
• 1994

Shoreline change due to the littoral drift in Suyeong bay, especially the Gwanganri and Haeundae beaches, was investigated. Average monthly frequency. speed. and direction of winds blowing from between east and south for the last 15 years were analysed, and offshore significant waves were hindcasted using the JONSWAP model. Wave refractions, shoaling, and breaking weir also investigated for the calculation of littoral drift. At the Gwanganri beach major longshore transport of sands occurs from the southwest to the northeast and the shoreline seems to advance in the northeast while it recedes in the southwest. At the Haeundae beach the sands mainly move from the east to the west and the shoreline retreats in the east and advances in the west.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.11
• /
• pp.981-986
• /
• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• Steel and Composite Structures
• /
• v.45 no.5
• /
• pp.683-695
• /
• 2022

Conventional braces are often used to provide stiffness to structures; however due to buckling they cannot be used as seismic energy dissipating elements. In this study, a seismic energy dissipation device is proposed which is comprised of a bracing member and a steel hysteretic damper made of steel hexagonal plates. The hexagonal shaped designated fuse causes formation of plastic hinges under axial deformation of the brace. The main advantages of this damper compared to conventional metallic dampers and buckling-restrained braces are the stable and controlled energy dissipation capability with ease of manufacture. The mechanical behavior of the damper is formulated first and a design procedure is provided. Next, the theoretical formulation and the efficiency of the damper are verified using finite element (FE) analyses. An analytical model of the damper is established and its efficiency is further investigated by applying it to seismic retrofit of a case study structure. The seismic performance of the structure is evaluated before and after retrofit in terms of maximum interstory drift ratio, top story displacement, residual displacement, and energy dissipation of dampers. Overall, the median of maximum interstory drift ratios is reduced from 3.8% to 1.6% and the residual displacement decreased in the x-direction which corresponds to the predominant mode shape of the structure. The analysis results show that the developed damper can provide cost-effective seismic protection of structures.

• Earthquakes and Structures
• /
• v.7 no.5
• /
• pp.647-665
• /
• 2014

Squat reinforced concrete walls require enough shear strength in order to promote flexural yielding, which creates the need for designers of an accurate method for strength prediction. In many cases, especially for existing buildings, strength estimates might be insufficient when more accurate analyses are needed, such as pushover analysis. In this case, estimates of load versus displacement are required for building modeling. A model is developed that predicts the shear load versus shear deformation of squat reinforced concrete walls by means of a panel formulation. In order to provide a simple, design-oriented tool, the formulation considers the wall as a single element, which presents an average strain and stress field for the entire wall. Simple material constitutive laws for concrete and steel are used. The developed models can be divided into two categories: (i) rotating-angle and (ii) fixed-angle models. In the first case, the principal stress/strain direction rotates for each drift increment. This situation is addressed by prescribing the average normal strain of the panel. The formation of a crack, which can be interpreted as a fixed principal strain direction is imposed on the second formulation via calibration of the principal stress/strain direction obtained from the rotating-angle model at a cracking stage. Two alternatives are selected for the cracking point: fcr and 0.5fcr (post-peak). In terms of shear capacity, the model results are compared with an experimental database indicating that the fixed-angle models yield good results. The overall response (load-displacement) is also reasonable well predicted for specimens with diagonal compression failure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.267-273
• /
• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.