• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.169-179
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• 1999

In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.81-86
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• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• Food Science and Preservation
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• v.19 no.3
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• pp.368-375
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• 2012

To decrease the intake of animal fat and cholesterol, the changes in the physicochemical characteristics of beef loin cooked through different methods (boiling, steaming, baking, and frying) were investigated. The cooking weight loss, moisture drain rate, and cholesterol drain rate were highest during frying, whereas the lipid drain rate was highest during boiling. The pH value increased markedly during steaming, the acid value of meat fat increased remarkedly during boiling, and the refractive index of meat fat increased notably upon frying. The hardness of meat was remarkedly increased by steaming. The gumminess and chewiness of meat were notably increased by frying. The springiness slightly decreased during all the cooking methods, and the cohesiveness was not significantly affected by any cooking process. The CIE $L^*$ (lightness) value increased markedly during boiling, the CIE $a^*$ (redness) value decreased markedly during both boiling and steaming, and the CIE $b^*$ (yellowness) value decreased notably during all the cooking methods. The fatty acid composition did not significantly change after cooking, except when the meat was fried. Therefore, boiling is an effective cooking method for beef loin to decrease the intake of animal fat.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1087-1093
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• 2012

In this paper, we implemented a HF-band magnetic-field communication system consisting of an amplitude shift keying(ASK) transmitter, a pair of loop antennas, and an ASK receiver. Especially, we suggested a new ASK transmitter architecture, where a drain bias of class E amplifier is switched alternatively between two voltage levels with respect to input data. A maximum 5 W class E amplifier was designed using a low cost IRF510 power MOSFET at the frequency of 6.78 MHz. A measured sensitivity of the designed ASK receiver is -78 dBm, which consists of a log amplifier, a filter, and a comparator. Maximum communication range of magnetic-wave communication system with loop antennas was calculated using magnetic field equations in both near-field and far-field ranges. Also, in order to verify the calculated values, an indoor propagation loss was measured using a pair of loop antennas whose dimensions are $30{\times}30cm$. Maximum operating range is estimated about 35 m in case of transmitter's output power of 1 W and receiver sensitivity of -70 dBm, respectively. Finally, the communication field test using the designed ASK transmitter and receiver was successfully done at the distance of 5 m.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.61-64
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• 2002

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

• Archives of Plastic Surgery
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• v.40 no.6
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• pp.711-714
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• 2013

Background The most common cause of skin graft failure is the collection of blood or serous fluid underneath the graft. In our study, we describe the use of silicone tube for tie-over dressing to secure the skin graft margins with the aim of decreasing loss of the skin graft, particularly in grafting of deep wounds. Methods Between March 2008 and July 2011, we used this technique in 17 patients with skin defects with depths ranging from 3.5 to 8 mm (mean, 5.5 mm). First, the skin graft was sutured with 3/0 silk suture material from its corners. Then, a silicone round drain tube was sutured with 3/0 absorbable polyglactin 910 over the margins of the graft. Finally, long silk threads were tied over the bolus dressing, and the tie-over dressing was completed in the usual fashion. Results The mean follow-up was 7 months (range, 2-10 months) in the outpatient clinic. Graft loss on the graft margins due to hematoma or seroma was not developed. The results of adhesion between the graft and wound bed peripherally was excellent. Conclusions In our study, we suggest that use of a silicone tube for additional pressure on the edges of skin grafts in case of reconstruction of deep skin defects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.100-108
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• 2014

Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this wideband LNA is $0.202mm^2$, including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 - 13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.