• 한국농공학회지
• /
• 제40권1호
• /
• pp.96-105
• /
• 1998

Soil properties, drain conditions and numerical analysis technique have great influence upon consolidation behavior. In relevant to the above described fact, this paper aims to examining the applicability of prediction model of consolidation as well as deformation characteristics for soft clayey foundation improved by sand drain. A case study for actual foundation of Kwangyang steel works was performed. Single drain consolidation model proposed by Hansbo and Biot's consolidation theory coupled with modified Cam-clay model developed during the research were employed for the FEM numerical analysis of the foundation. Both smear effect and drain capacity were taken into account for the analysis. Finally the applicability of the newly developed technique to the behavior of foundation composed of soft clay proved satisfactory.

• 한국통신학회논문지
• /
• 제28권7A호
• /
• pp.451-466
• /
• 2003

Untethered nodes in mobile ad-hoc networks strongly depend on the efficient use of their batteries. In this paper, we propose a new metric, the drain rate, to forecast the lifetime of nodes according to current traffic conditions. This metric is combined with the value of the remaining battery capacity to determine which nodes can be part of an active route. We describe new route selection mechanisms for MANET routing protocols, which we call the Minimum Drain Rate (MDR) and the Conditional Minimum Drain Rate (CMDR). MDR extends nodal battery life and the duration of paths, while CMDR also minimizes the total transmission power consumed per packet. Using the ns-2 simulator and the dynamic source routing (DSR) protocol, we compare MDR and CMDR against prior proposals for power-aware routing and show that using the drain rate for power-aware route selection offers superior performance results.

• 전자공학회논문지A
• /
• 제30A권12호
• /
• pp.77-87
• /
• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• 조명전기설비학회논문지
• /
• 제26권8호
• /
• pp.102-106
• /
• 2012

This paper was carried out to survey fire hazard and improvement at the drain pump in air-conditioners. Based on the results of analysis, the proposal of electrical accidents prevention and a construction improvement are as follows. A power connection of the drain pump has two types, an electrical outlet type and direct connection type at control board of air-conditioner. The electrical outlet types need a bulletin sign or education as malfunction of the drain pump include an additional accidents, current leakage and overflowing with water on the floor from breaker trip by exterior cause and breaker off by mistake of worker. On the other hand, the direct connection types prevent a power interruption as exterior cause, but it has some trouble, cut of ground cable and without protection device. Usually it doesn't work by electrician when air-conditioner and the drain pump power work. Therefore an education or countermeasures are recommended for not electrician. Generally malfunction of the drain pump causes accumulated materials into the tank. Even though the accumulated materials lead to an overheating and burning as failure of detector occur an idling, periodic inspection of the air-conditioner filter and the drain pump tank prevent the trouble.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.384-385
• /
• 2006

We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.

• Journal of Advanced Marine Engineering and Technology
• /
• 제26권6호
• /
• pp.688-694
• /
• 2002

Several methods were developed for on-line measuring oil consumption in gasoline engine using an oil consumption meter. The oil consumption meter indicates the oil quantity by real-time-measuring the oil level in the sump. In order to measure the oil consumption, the oil consumption meter proposed in this paper requires shorter time, less additional procedures, and shows better results than the traditional drain method. Under steady-state engine-operating conditions, the results obtained through the regression or the difference method show an good agreement with those through the drain method. Under transient engine-operating conditions, on the other hand, good results can be obtained through the reference method.

• 한국지반공학회:학술대회논문집
• /
• 한국지반공학회 2000년도 봄 학술발표회 논문집
• /
• pp.685-692
• /
• 2000

Vertical drain used improvement soft clay is made of not only decreasing construction time but also increasing the ground strength during some decades. As, it is applied to improvement soft clay with vertical drain, it is designed by the result that is caused by oedemeter test ignored anisotropic of the ground related to consolidation conditions. When we are expected consolidation conditions, the most important factors is soil of compaction and water permeability. Above all, anisotropic of the ground permeability show the results which differ between vertical and radial drainage. Recently, We study for radial consolidation coefficient and permeability coefficient that utilized Rowe Cell Consolidation and permeability tester but, it dont use well because of not only a supply lack also difficulty of test. The paper experimented with searching anisotropic of the ground so there are Rowe Cell test, standard consolidation tester and modified standard consolidation test that have pohang's soft clay ground. Therefore, we find anisotropic of the ground and a tester of easy use more than before. We made a comparison test result between the devised tester and Rowe Cell tester, Also, we learned average degree of consolidation for partial penetrating vertical drains. We were found relations as effective stress-void and effective stress-permeability coefficient through those tests.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권4호
• /
• pp.217-222
• /
• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• 대한기계학회논문집B
• /
• 제38권12호
• /
• pp.1043-1050
• /
• 2014

물이 채워진 원통 용기를 회전시킨 후 배수하면 일정시간이 지난 후 공기기둥이 발생한다. 용기의 크기, 초기 회전 속도나 교반 속도, 배수구 모양 등의 배수조건에 따라 공기기둥의 발생 여부나 발생시간이 달라진다. 본 연구에서는 2 단으로 구성된 계단형 배수구를 가진 원통 용기에서 물이 배수되는 과정을 수치해석적으로 연구하였다. 하부에 위치한 배수구 1 단은 길이와 반경이 고정되어 있고, 상부에 위치한 2 단은 길이와 반경을 변화시켰다. 2 차원 격자계에 축대칭 조건을 적용하여 원통 용기 내부의 배수유동을 해석하였다. 물과 공기의 자유표면 모양을 추적하여 수위 변화를 관찰하였으며, 배수구 2단의 형상이 공기기둥 발생시간과 내부 유동구조 변화에 미치는 영향을 확인하였다.

• 대한전기학회논문지
• /
• 제38권6호
• /
• pp.401-415
• /
• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.