• Journal of information and communication convergence engineering
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• v.7 no.3
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• pp.361-365
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• 2009

This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.184-189
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• 1999

This Paper presents the friction and lubrication charateristic related with oil aeration. It is well known that oil aeration occurs severe problem on lubrication system, in particular, in the engine bearings and hydraulic lash adjuster. In this study, engine tests were carried out in motoring conditions. In order to investigate oil aeration characteristics, we measured oil aeration with respect to oil temperature, oil viscosity, modified oil drain system. From the results, we concluded that aeration can be reduced by improving oil drain system and FMEP can be reduced by minimising of aeration.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• Journal of Industrial Technology
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• v.29 no.A
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• pp.127-134
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• 2009

In this paper, an numerical approach is performed to investigate the effects of smear zone, occurred by penetrating vertical drains, on consolidation behavior of soft clay deposits. Such a numerical analysis is applied to the field condition to confirm its applicability. Parametric numerical analyses is carried out to study influencing factors such as permeability in smear zone, boundary of smear zone and discharge capacity of vertical drains on the consolidation of soil. As results of analyses, for the given conditions of soil, degree of consolidation is getting faster with increase of permeability of vertical drain. Degree of consolidation is delayed with decrease of permeability of smear zone. As the ratio of drain width to smear zone increases, the degree of consolidation decreases. Proposed values of influencing factors by previous researchers is found to be reliable from results of numerical analyses with Cam-clay model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• Journal of the Korean Geosynthetics Society
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• v.15 no.2
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• pp.35-44
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• 2016

PET aggregates were produced by mixing heated PET flakes with frictional soils. Using these artificially-made PET aggregates, horizontal drain tests in the laboratory, pilot scale model tests were conducted for the evaluation of the drainage characteristics of PET aggregates. Laboratory horizontal drain tests were conducted under twenty different conditions varying mixing ratios and surcharged pressures. Moreover, by utilizing the aggregates with a mixing ratio producing the lowest variation in terms of permeability against applied load, large scale tests were performed. Reliability of the test results was evaluated from comparison with the results of the laboratory horizontal drain test.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Korean journal of food and cookery science
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• v.28 no.5
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• pp.599-604
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• 2012

In this study, the prevalence of microbiological hazard on water purifiers at lunchroom in child care center was investigated. A total of 49 water purifiers and their purified cold water were sampled to test about the total aerobic bacteria, coliform bacteria, Bacillus cereus, Staphylococcus aureus, and Salmonella spp. Total aerobic bacteria was detected over 2.0 log CFU/mL in 6 out of 49 purified cold water (12.2%), ranged from 2.0 to 2.4 log CFU/mL, and the average number of total aerobic bacteria was showed to be 3.3 log CFU/drain spout. The drain spout turned out to be a major contaminant in water purifier and needs to be improved. Coliform bacteria were also detected in 7 out of 49 cold faucets (14.3%) and 7 out of 49 drain spouts (14.3%), but not detected in purified cold water. All samples were not contaminated with the pathogens tested in this study, except for B. cereus, which was contaminated on 2 out of 49 cold faucets (4.1%) and 4 out of 49 drain spouts (8.2%). All of B. cereus isolates produced enterotoxin, such as heamolysin BL enterotoxin (HBL) or non-heamolytic enterotoxin (NHE). The HBL was detected in 5 out of 6 B. cereus isolates (83.3%), including B. cereus PCF-11 and B. cereus PDS-30 isolate only produced NHE (16.7%). These results showed that the sanitary conditions of cold faucets and drain spouts should be improved promptly.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Economic and Environmental Geology
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• v.29 no.3
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• pp.315-323
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• 1996

An apatite drain was constructed on September 30, 1994 at the Green Valley Abandoned Coal Mine site near Terre Haute in west central Indiana. The primary objective of this experiment is to evaluate the long-term ability of the apatite drain to mitigate acid mine drainage (AMD) under field conditions. The drain 9 m long, 3.3 m wide, and 0.75 m deep, contain 95 rum to No. 30 mesh-size apatite ore (francolite) and receive AMD seepage from reclaimed gob piles, and designed according to the laboratory testing. The apatite drain was covered with limestone riprap and filter fabric to protect the drainage system from stormwater and siltation. The drain consists of about 50 metric tons of apatite ore obtained from a phosphate mine in Florida. A gabion structure was constructed downstream of the apatite drain to create a settling pond to collect precipitates. Apatite effectively removed iron up to 4,200 mg/l, aluminum up to 830 mg/l and sulfate up to 13,430 mg/l. The pH was nearly constant for the influent and effluent, ranging between 3.1 and 4.3. Flow rate measured at the gabion structure ranged from 3 to 4.5 l/m. Precipitates of iron and aluminum phosphate (yellow and white suspendid solids) continued to accumulate in the settling pond.