• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.10 no.5
• /
• pp.69-75
• /
• 2010

Advanced T-DMB(Terrestial DMB )system which is a new portable mobile broadcasting system has been developed to increase data rate up to double of conventional T-DMB in same bandwidth while maintaining backward compatibility, using hierarchical modulation method. The Advanced T-DMB system realize high qualification of conventional T-DMB system by adding BPSK signal or QPSK signal as enhanced layer to existing DQPSK signal. The enhanced layer signal should be small enough to maintain backward compatibility and to minimize the coverage loss of existing T-DMB service area. But this causes the enhanced layer signal of Advanced T-DMB susceptible to fading effect in transmission channel. In this paper we applied the duo-binary turbo code which has powerful error correction capability to the enhanced layer signal for compensating channel distortion. And the computer simulation results about the performance of the duo-binary turbo code in Advanced T-DMB system are presented along with analysis comments.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.6
• /
• pp.1-7
• /
• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Journal of Broadcast Engineering
• /
• v.14 no.6
• /
• pp.721-732
• /
• 2009

AT-DMB system has been developed to increase data rate up to double of conventional T-DMB in same bandwidth while maintaining backward compatibility. The AT-DMB system adopted hierarchical modulation which adds BPSK signal or QPSK signal as enhanced layer to existing DQPSK signal. The enhanced layer signal should be small enough to maintain backward compatibility and to minimize the coverage loss of existing T-DMB service area. But this causes the enhanced layer signal of AT-DMB susceptible to fading effect in transmission channel. A turbo code which has powerful error correction capability is applied to the enhanced layer signal of the AT-DMB system for compensating channel distortion. We developed the prototype AT-DMB transmitter and receiver systems for performance evaluation. LAB test for analysing the effect of constellation ratio between existing base layer signal and enhancement layer signal, was conducted and the measurement results are shown with analysis comments.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.12 no.4
• /
• pp.15-22
• /
• 2012

This paper deals with the performance comparison and evaluation of blind adaptive equalizer, the PMCMA-MDD and DW-MCMA, that is used for compensation of the amplitude and phase distortion which occurs in the time dispersive channel. Basically, these algorithms are modification of MCMA cost function in order to obtain the fast convergence speed and reduced residual isi by taking the parallel and serial double structured and the combination of the concept of RCA for the updating the tap coefficient. We implements the algorithm of it and compare the recovered constellation, residual isi, MSE characteristics curve and SER in the signal to noise ratio given the time dispersive channel. As a result of simulation, the PMCMA-MDD has a good in recovered constellation than DW-MCMA. But in the SER, the DW-MCMA has a good than PMCMA-MDD.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.154-154
• /
• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.479-479
• /
• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.55-55
• /
• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.1
• /
• pp.188-194
• /
• 2011

We analyze transmission performance of radio frequency signal in WDM-ROF (wavelength division multiplexing - radio over fiber) system employing photonic crystal fiber. In a WDM-ROF system employing conventional single-mode fiber, transmission performance of radio frequency signal is analyzed depending on each WDM channel. In this case, each WDM channel experiences power fluctuation of received RF signal in remote node because of double sidebands of the modulated signal and wavelength dependent dispersion of single mode fiber. This RF power fluctuation acts as a design constraint in viewpoint of system design. By employing photonic crystal fiber (PCF) with dispersion compensation characteristics, the transmission performance of RF signal can be improved compared with the case with SMF only.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.6
• /
• pp.444-451
• /
• 2017

In this paper, we have evaluated and analyzed OTFS(Orthogonal Time Frequency Space) modulation and OTFS-MIMO(Multiple Input Multiple Output) system. OTFS modulation can concisely compensate delay-Doppler spreading effect by using 2D(2-Dimension) iDFT (inverse Discrete Fourier Transform) and DFT(Discrete Fourier Transform) operation. It enables OTFS system to transmit high-speed data. Especially, OTFS-MIMO system can transmit all data streams without performance degradation on high Doppler frequency channel. As simulation results, we have confirmed that $1{\times}1$ OTFS system's achievable rate is a similar to each stream of $2{\times}2$ OTFS-MIMO system. That is, we have also confirmed that $2{\times}2$ MIMO system can completely achieve double achievable rate in comparison with OTFS system on high Doppler frequency channel.

• Journal of Korea Society of Industrial Information Systems
• /
• v.20 no.6
• /
• pp.29-36
• /
• 2015

This paper presents an LED backlight driver IC consisting of three linear current regulators and an output-voltage regulation loop with a self-adjustable reference voltage. In the proposed LED driver, the output voltage is controlled by dual feedback loops. The first loop senses and controls the output voltage, and the second loop senses the voltage drop of the linear current regulator and adjusts the reference voltage. With these feedback loops, the voltage drop of the linear current regulator is maintained at a minimum value, at which the driver efficiency is maximized. The output of the driver is a three-channel LED setup with four LEDs in each channel. The luminance is adjusted by the PWM dimming signal. The proposed driver is designed by a $0.35-{\mu}m$ 60-V high-voltage process, resulting in an experimental maximum efficiency of approximately 85%.