• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Microbiology and Biotechnology Letters
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• v.18 no.6
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• pp.640-646
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• 1990

We have cloned the cdd gene from E. coli C600 using (cdd-) as a host. From the sequenced promoter region of E=, coli cdd gene which has been determined by Valentin-Hansen P. (1985), we synthesized the 23 mer oligonucleotides corresponding to the transcription initiation region and used as a probe for cloning of the cdd gene by Southern blotting. The isolated fragments in the blotting were introduced to the colony hybridization after transforming it into the E. coli JF611 (cdd-, pyr double mutant), and we identified the hybridized band at 27 kb long. From the original insert of 27 kb fragment in theBamHI site of pBR322, the 5.3 kb fragment containing the cdd gene was isolated by subsequent deletion and subeloning. From the derived plasmid pTK509, further deletion and subcloning were performed and clarified that the cdd gene was located in the 2.1 kb of SaZI/DraI segment in the insert of pTK605. The polypeptide encoded by the cloned DNA was appeared to be a molecular mass of 33,000.

• Publications of The Korean Astronomical Society
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• v.27 no.3
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• pp.71-80
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• 2012

We have developed superconducting mixer receivers for 129 GHz VLBI observation in Korean VLBI Network (KVN). The developed mixer has a radial waveguide probe with simple transmission line L-C transformer as a tuning circuit to its 5 series-connected junctions, which can have 125 - 165 GHz as the operation radio frequency (RF). For intermediate frequency (IF) signal path a high impedance quarter-wavelength line connects the probe to one end of symmetric RF chokes. The double side band (DSB) receiver noise of the mixer was about 40 K over 4 - 6 GHz IF band, whereas we achieved the uncorrected single side band (SSB) noise temperature of about 70 K and better than 10 dB image rejection ratio in 2SB configuration with 8 - 10 GHz IF band. Insert-type receiver cartridges employing the mixers have been under commission for KVN stations.

• Nuclear Engineering and Technology
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• v.53 no.9
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• pp.2982-2989
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• 2021

One of the consequences of the 475 ℃ embrittlement of duplex stainless steels is the reduction of the resistance to localized corrosion. Therefore, the detection of this type of embrittlement before the material exhibits significant loss in toughness, and corrosion resistance is important to ensure the structural integrity of critical components under corrosion threats. In this research, conductivity measurements are performed using the alternating current potential drop (ACPD) technique with using a portable four-point probe as a nondestructive evaluation (NDE) method for detecting the embrittlement in a 2507 (UNS S32750) super duplex stainless steel (SDSS) aged at 475 ℃ from as-received condition to 300 h. The electric conductivity results were compared against two electrochemical tests namely double loop electrochemical potentiokinetic reactivation (DL-EPR) and critical pitting temperature (CPT). Mechanical tests and the microstructure characterized using scanning electron microscopy (SEM) imaging are conducted to track the progress of embrittlement. It is shown that the electric conductivity correlates with the changes in impact energy, microhardness, and CPT corrosion tests result demonstrating the feasibility of the four-point probe as a possible field-deployable method for evaluating the 475 ℃ embrittlement of 2507 SDSS.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.312-321
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• 2012

The electric potential of plasma column is measured with the high voltage probe in a pair of atmospheric plasma jets operated by AC-voltage. According to the polarity of voltage applied to the electrodes, the polarity of plasma column potential has the same polarity of applied voltage. The high potential of plasma column at the side of high voltage electrode is decreased linearly along the plasma column to the ground side. Therefore, the plasma column seams to be a kind of resistor whose resistivity is a few 10s $M{\Omega}/m$. In the experiment of double-jets system, the polarity of plasma potential is verified to be the same polarity to the applied voltage. When the different voltage polarities are applied to the electrodes of double plasma jets, the attractive force is acted between two plumes at the merged plasma and the plasma potential is measured to be low as a few 10s V. When the same polarity of voltage is applied to the electrode, the repulsive force is acted and the plasma potential is measured to be high as a several 100s V at the merged plumes. In the exposure of plasma plume on the bio-substrate with the double plasma jets, the electric shock and thermal damage might be proportional to the plasma power which is the multiplication of the plasma potential and the plasma current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.203-209
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• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

• BMB Reports
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• v.45 no.8
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• pp.452-457
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• 2012

Diketoreductase (DKR) from Acinetobacter baylyi contains two tryptophan residues at positions 149 and 222. Trp-149 and Trp-222 are located along the entry path of substrate into active site and at the dimer interface of DKR, respectively. Single and double substitutions of these positions were generated to probe the roles of tryptophan residues. After replacing Trp with Ala and Phe, biochemical and biophysical characteristics of the mutants were thoroughly investigated. Enzyme activity and substrate binding affinity of W149A and W149F were remarkably decreased, suggesting that Trp-149 regulates the position of substrate at the binding site. Meanwhile, enzyme activity of W222F was increased by 1.7-fold while W222A was completely inactive. In addition to lower thermostability of Trp-222 mutants, molecular modeling of the mutants revealed that Trp-222 is vital to protein folding and dimerization of the enzyme.

• Journal of the Korean Magnetic Resonance Society
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• v.21 no.3
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• pp.109-113
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• 2017

The hepatitis C virus (HCV) internal ribosome entry site (IRES) is an RNA structure located in the 5'-UTR of the HCV RNA genome. The HCV IRES consists of four domains I, II, III, and IV, where domains II - IV are recognized by 40S ribosomal subunit and the domain III is bound to eukaryotic initiation factor 3 (eIF3) for translation initiation. Here, we have characterized the tertiary interaction between an L-/K- rich peptide and the HCV IRES domain IV. To probe the peptide binding interface in RNA, we synthesized $^{13}C$- and $^{15}N$-double labeled RNA and the binding site was identified by using the chemical shift perturbation (CSP) NMR methods. Our results showed that the peptide binds to the upper stem of the IRES domain IV, indicating that the tertiary interaction between the IRES domain IV and the peptide would disrupt the initiation of translation of HCV mRNA by blocking the start codon exposure. This study will provide an insight into the new peptide-based anti-viral drug design targeting HCV IRES RNA.