• 제목/요약/키워드: doping test

검색결과 70건 처리시간 0.024초

n-MOSFET 정전기 방전 분석 (Electrostatic Discharge Analysis of n-MOSFET)

  • 차영호;권태하;최혁환
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.587-595
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    • 1998
  • Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

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Examination of Diffusion Process for High-speed Avalanche Photodiode Fabrication

  • Ilgu Yun;Hyun, Kyujg-Sook;Kwon, Yong-Hwan;Pyun, Kwang-Eui
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.954-958
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    • 2000
  • The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

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Study of Zinc Diffusion Process for High-speed Avalanche Photodiode Fabrication

  • Ilgu Yun;Hyun, Kyung-Sook;Pyun, Kwang-Eui
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.731-734
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    • 2000
  • The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

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PLD-DBD 공정으로 제작된 비정질 Zn 산화물 박막트랜지스터의 안정성 향상 (Stability enhancement of armorphous znic oxide thin film transistors fabricated by pulsed laser deposition with DBD)

  • 전윤수;정유진;조경철;김승한;정다운;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.391-391
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    • 2010
  • The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

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HIGH BURNUP FUEL TECHNOLOGY IN KOREA

  • Song, Kun-Woo;Jeong, Yong-Hwan;Kim, Keon-Sik;Bang, Je-Geon;Chun, Tae-Hyun;Kim, Hyung-Kyu;Song, Kee-Nam
    • Nuclear Engineering and Technology
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    • 제40권1호
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    • pp.21-36
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    • 2008
  • High bum-up fuel technology has been developed through a national R&D program, which covers key technology areas such as claddings, $UO_2$ pellets, spacer grids, performance code, and fuel assembly tests. New cladding alloys were developed through alloy designs, tube fabrication, out-of-pile test and in-reactor test. The new Zr-Nb tubes are found to be much better in their corrosion resistance and creep strength than the Zircaloy-4 tube, owing to an optimized composition and heat treatment of the new Zr-Nb alloys. A new fabrication technology for large grain $UO_2$ pellets was developed using various uranium oxide seeds and a micro-doping of Al. The uranium oxide seeds, which were added to $UO_2$ powder, were prepared by oxidizing and heat-treating scrap $UO_2$ pellets. A $UO_2$ pellet containing tungsten channels was fabricated for a thermal conductivity enhancement. For the fuel performance analysis, new high burnup models were developed and implemented in a code. This code was verified by an international database and our own database. The developed spacer grid has two features of contoured contact spring and hybrid mixing vanes. Mechanical and hydraulic tests showed that the spacer grid is superior in its rodsupporting, wear resistance and CHF performance. Finally, fuel assembly test technology was also developed. Facilities for mechanical and thermal hydraulic tests were constructed and are now in operation. Several achievements are to be utilized soon by the Korea Nuclear Fuel and thereby contribute to the economy and safety of PWR fuel in Korea

Low-Temperature Solution Process of Al-Doped ZnO Nanoflakes for Flexible Perovskite Solar Cells

  • Nam, SeongSik;Vu, Trung Kien;Le, Duc Thang;Oh, Ilwhan
    • Journal of Electrochemical Science and Technology
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    • 제9권2호
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    • pp.118-125
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    • 2018
  • Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

Photodegradation of Volatile Organic Compound (VOC) Through Pure TiO2 and V-Doped TiO2 Coated Glasses

  • Moon, Jiyeon;Kim, Seonmin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.425.2-425.2
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    • 2014
  • $TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

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EFFECT OF A STANDARDIZED GINSENG EXTRACT ON GENERAL HEALTH, REACTIVE CAPACITY AND PULMONARY FUNCTION

  • Forgo Imre
    • 고려인삼학회:학술대회논문집
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    • 고려인삼학회 1980년도 학술대회지
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    • pp.143-150
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    • 1980
  • The purpose of this double-blind study was to study the standardized ginseng-extract (marketed form, GINSANA), in regard to its efficacy on the reaction time, pulmonary function and general health in subjects of various age-groups. The trial was conducted as a double-blind study in a total of 120 subjectsm allocated to different groups, according to age (30 to 39 and 40 to 60 year age-groups), sex and preparation administered (ginseng/placebo). The study lasted 12 weeks and the dosage was fixed at 2 capsules per day. The rusults regarding reaction time and pulmonary function showed significant differences in favour of the GINSANA group, over the placebo group, in the 40 to 60-year-old men and women. In the self-evaluation (performance, mood, concentration) we observed a clear improvement (p < 0.001) in the subjects treated with GINSANA, with the exception of the men age 30-39 years. The results botained, which are specially related to reaction, pulmonary function, self evaluation and tolerability, have shown that GINSANA, as standardized ginseng extract, has a favourable effect on the psychic and physical functions studied. 3. Performance test in top sportsmen before and after 9 weeks' treatment with GINSANA To what extent can GINSANA influence physical performance? It is precisely we the physicians whose task it is to find drugs which in physiological amounts do not have any special pharmacodynamic effects. We were therefore interested in the preparation, GINSANA which was made available to us, since it contains a qualitatively and quantitatively standardized GINSENG EXTRACT and is not doping agent.

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Bi-CMOS공정중 SSR 채널 형성을 위한 $Sb_2O_3$ 빔튜닝 방법 연구 (A Study of $Sb_2O_3$ Beam Tuning for SSR Channel on Bi-CMOS Process)

  • 최민호;김남훈;김상용;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.369-372
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    • 2004
  • The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using $Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately.

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Preparation of Biomass Based Carbon for Electrochemical Energy Storage Application

  • Harshini Priyaa, V.S.;Saravanathamizhan, R.;Balasubramanian, N.
    • Journal of Electrochemical Science and Technology
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    • 제10권2호
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    • pp.159-169
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    • 2019
  • The activated carbon materials were prepared from waste biomass by ultrasonic assisted chemical activation method (UCA), ultrasonic assisted physical activation method (UPA) and Manganese nitrogen doped carbon (Mn/N-C). The XRD result shows the turbostatic (fully disordered) structure. The cyclic voltammetry test was done at 50 mV/s using 1M sodium sulfate and the values of specific capacitance were found to be 93, 100 and 115 F/g for UCA, UPA and Mn/N-C respectively. The power density values for the samples UCA, UPA and Mn/N-C were found to be 46.04, 87.97 and 131.42 W/kg respectively. The electrochemical impedance spectroscopy was done at low frequency between 1 to 10 kHz. The Nyquist plot gives the resistant characteristics of the materials due to diffusional resistance at the electrode-electrolyte interface. The Energy Dispersive X-Ray Spectroscopyanalysis (EDAX) analysis showed that the percentage doping of nitrogen and manganese were 3.53 wt% and 9.44 wt% respectively. It is observed from the experiment Mn/N-C doped carbon show good physical and electrochemical properties.