• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

• Progress in Superconductivity
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• 제11권1호
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• pp.67-71
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• 2009

The effect of Cu substitution on the structural and superconducting properties of the $(Ru_{1-x}Cu_x)Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$ system with x = 0, 0.25 and 0.5 prepared under ambient pressure have been investigated. The X-ray diffraction patterns indicated that the Ru ions are replaced by the Cu ions. It is found that the Cu substitution for Ru significantly reduces the ferromagnetic component of field-cooled magnetic susceptibility, but results in a small change in diamagnetic onset transition temperature of zero-field-cooled magnetic susceptibility. In contrast to the Ru $Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$, bulk Meissner effect is observed in the field-cooled magnetization measurements of the Cu doped samples. The experimental results are discussed in connection with the spontaneous vortex phase interpretation.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.65-69
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• 2017

This paper presents a Technology-CAD (TCAD) simulation of the characteristics of crystalline Si pillar array solar cells. The junction depth and the surface concentration of the solar cells were optimized to obtain the targeted sheet resistance of the emitter region. The diffusion model was determined by calibrating the emitter doping profile of the microscale silicon pillars. The dimension parameters determining the pillar shape, such as width, height, and spacing were varied within a simulation window from ${\sim}2{\mu}m$ to $5{\mu}m$. The simulation showed that increasing pillar width (or diameter) and spacing resulted in the decrease of current density due to surface area loss, light trapping loss, and high reflectance. Although increasing pillar height might improve the chances of light trapping, the recombination loss due to the increase in the carrier's transfer length canceled out the positive effect to the photo-generation component of the current. The silicon pillars were experimentally formed by photoresist patterning and electroless etching. The laboratory results of a fabricated Si pillar solar cell showed the efficiency and the fill factor to be close to the simulation results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.114-118
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• 2006

We investigated the transient electroluminescence (EL) and modulation characteristics of red organic light-emitting diodes (OLEDs), which consist with 4-(dicyanomethylene)-2-i -propyl-6-(1,1,7,7-tetramethyljulolidyl-9-cnyl)-4H-pyran (DCJTI) and rubrene doped into tris(8-hydroxyquinoline)aluminum ($Alq_3$). The transient EL waveforms showed two components, the overshooting peak and constant component, indicating that the excess amount of accumulated charges simultaneously recombine at the onset moment. This overshooting effect reduced the rise time of transient EL and enhanced the optical output of OLEDs when the pulse voltage applied to the device. We demonstrated that the red OLEDs could be use for the high-speed switching application by driving at more than 100 MHz and transmitting the video signals utilized as the electro-optical conversion device

• Current Photovoltaic Research
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• 제2권1호
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• pp.28-35
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• 2014

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

• 공업화학
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• 제19권6호
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• pp.661-667
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• 2008

본 연구에서는 LCD 백라이트용 휘도향상 편광필름으로 사용하기 위해, 콜레스테릭 액정(CLC)을 합성하여 네미틱 액정과 혼합한 다음 이들이 충진된 모듈을 제작하였다. 광확산필름에 의해 면광원화된 빛을 통과시킬 때, LCD 백라이트상에서 이들의 투과광 증폭 및 편광능력에 대한 특성을 연구하였다. 합성된 콜레스테릭 액정의 특성은 UV/Visible 스펙트럼과 편광현미경(POM) 등으로 평가하였다. 여러 종류의 선형 카르복실산을 콜레스테롤 분자에 도입하여 콜레스테릭 메소젠 사이의 유연격자를 이루도록 유도하여 각 층에서 일정한 방향성을 유지하도록 하였다. 또한 CLC필름을 적층하여 가시광선대에서 편광능력, 휘도향상 및 투과파장영역을 넓히고 백라이트 유니트의 밝기를 향상시키는 모듈로 적용할 수 있었다.

• 한국재료학회지
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• 제30권1호
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• pp.14-21
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• 2020

Carbon supports for dispersed platinum (Pt) electrocatalysts in direct methanol fuel cells (DMFCs) are being continuously developed to improve electrochemical performance and catalyst stability. However, carbon supports still require solutions to reduce costs and improve catalyst efficiency. In this study, we prepare well-dispersed Pt electrocatalysts by introducing titanium dioxide (TiO₂) into biomass based nitrogen-doped carbon supports. In order to obtain optimized electrochemical performance, different amounts of TiO₂ component are controlled by three types (Pt/TNC-2 wt%, Pt/TNC-4 wt%, and Pt/TNC-6 wt%). Especially, the anodic current density of Pt/TNC-4 wt% is 707.0 mA g^-1_pt, which is about 1.65 times higher than that of commercial Pt/C (429.1 mA g^-1_pt); Pt/TNC-4wt% also exhibits excellent catalytic stability, with a retention rate of 91 %. This novel support provides electrochemical performance improvement including several advantages of improved anodic current density and catalyst stability due to the well-dispersed Pt nanoparticles on the support by the introduction of TiO₂ component and nitrogen doping in carbon. Therefore, Pt/TNC-4 wt% may be electrocatalyst a promising catalyst as an anode for high-performance DMFCs.

• 전기화학회지
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• 제15권2호
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• pp.90-94
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• 2012

We report nanostructure electrodes with $TiO_2$ as a core and carbon as a shell ($TiO_2$@C) for oxygen reduction in alkaline solution. The structure of core-shell electrodes is characterized by transmission electron microscopy, Raman spectroscopy, X-ray diffraction method, and X-ray photoelectron microscopy. The electrochemical properties of the $TiO_2$@C electrodes are characterized using a potentiostat and compared with those of carbon supported Pt catalyst. In particular, the core-shell electrode with dominant pyridinic-N component exhibits an imporved electrocatalytic activity for oxygen reduction reaction in alkaline solution.