• Korean Journal of Materials Research
• /
• v.8 no.12
• /
• pp.1170-1175
• /
• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Korean Chemical Engineering Research
• /
• v.53 no.6
• /
• pp.755-761
• /
• 2015

Photocatalytic VOCs removal test in gas phase is generally performed by placing the light source on the outside due to maintaining a constant temperature inside the test chamber. The distance between light source and photocatalysts is importantin the VOC degradation test since the intensity of light is rapidly decreased as the distance farther. Especially, for the choice of light source as UVLED, this issue is more critical because UVLED light source emits lots of heat and it is hard to measure the exact concentration of VOCs due to changed temperature in the test chamber. In this study, we modified VOC removal test chamber base on the protocol of air cleaner test and evaluated the efficiency of photocatalystunder UVLED irradiation. Photocatalystsof two different samples (commercial $TiO_2$ and the synthesized vanadium doped $TiO_2$) weretested for the p-xylene degradation in the closed chamber system and compared with each other in order to exclude any experimental uncertainties. During the VOC removal test, VOC concentrations were monitored and corrected at regular time intervals because the temperature in the chamber increases ${\sim}20^{\circ}C$ due tothe heat of UVLED. The results showed that theconversion ratio of p-xylene has 40~43% difference before and after the temperature correction. Based on those results, we conclude that the VOC concentration correction must be required for the VOC removal test in a closed chamber system under UVLED light source and obtained the corrected efficiencies of various photocatlysts.

• Journal of the Korean Ceramic Society
• /
• v.32 no.10
• /
• pp.1169-1177
• /
• 1995

Barium nitrate and yittrium nitrate were dissolved into distilled water. Titaium hydroxide precipitated from titanium chloride with NH4OH was dissolved into nitric acid. Each aqueous solution was mixed for 12 hr in the composition of Ba1-xYxTiO3 (x=0.1∼0.6) and the concentration of mixed solution was 0.1 mol/ι. The mixed solution was sprayed with an ultrasonic atomizer and carried into an electric furnace which was kept at 900∼1000$^{\circ}C$ and pyrolyzed. Pyrolyzed powders were collected on the glass filter with vacuum pump. Aqueous Mn solutiion was added into the synthesized powders, mixed with ultrasonic vibration and sintered at 1300∼1400$^{\circ}C$. Synthesized powders were characterized with SEM, XRD, DT-TGA, and BET. Microsture and resistivity of sintered body were investigated with SEM and multimeter. The results of this experiment were as follows; 1) Yittrium dooped BaTiO3 powders were synthesized above 950$^{\circ}C$. 2) The average particle sizes of powders from BET specific surface area and SEM were 0.045$\mu\textrm{m}$, 0.046$\mu\textrm{m}$ respectively. The particle size distribution was narrow in the range of 0.1∼1.0$\mu\textrm{m}$ from SEM. 3) Room temperature resistivity and pmax/pmin of 0.4 mol% Y doped specimen which was sintered at 1375$^{\circ}C$ were 102∼3 (Ω$.$cm) and 102∼3 respectively. 4) Room temperature resistivity and pmax/pmin of 0.4 mol% Y and 0.04 at% Mn added specimen which was sintered at 1375$^{\circ}C$ were 102∼3 (Ω$.$cm) and 106∼7 respectively. 5) Grain growth was inhibited with addition of Y2O3 and enhanced in addition of Mn by 0.05 atm%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.3
• /
• pp.147-151
• /
• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.5
• /
• pp.101-105
• /
• 1994

The EL lamp have been fabricated by screen printing method. the thickness of BaTiO$_3$ dielectric layer and ZnS:Cu phosphor layer was 20 $\mu$m and 40 $\mu$m, respectively. The threshold voltage of green El lamp was 50 $V_{p-p}$ and the maximum brightness was 13.5 $\mu$ W/cm$^2$ at frequency of 700 Hz and the input voltage of 250 $V_{p-p}$. Also when the Rodamin G6 of 0.02 g was doped, the threshold voltage of white EL lamp was 70 $V_{p-p}$ and the maximum brightness was 34 $\mu$W/cm$^2$.

• Journal of the Korean Solar Energy Society
• /
• v.22 no.4
• /
• pp.44-50
• /
• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.4
• /
• pp.140-143
• /
• 2005

Carbon Nanotube(CNTs) counter electrode is a promising alternative to Platinum counter electrode for dye sensitized solar cells (DSSCs). In this study, CNT counter electrodes having different visible light transmittance were prepared on fluorine-doped tin oxide (FTO) glass surface by spray coating method. Microstructural images show that there are CNT-tangled region coated on FTO glass counter electrodes. Using such CNT counter electrodes and screen printed $TiO_2$ electrodes, DSSCs were assembled and its I-V characteristics have been studied and compared. Light energy conversion efficiency of DSSCs increased with decreasing in light transmittance of CNT counter electrode. Efficiency of DSSCs having CNT counter electrode is compatible to that of Pt counter electrode.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
• /
• 1995.05a
• /
• pp.60-68
• /
• 1995

This work wes performed to investigate the photocatalytic decolorization of waste water from textile industries. Methyl orange was used as a target dye with suspended Hombikat TiO$_2$ photocatalyst with a recirculating annular photoreactor. 1 wt % Pt-doped Hombikat thin film tubular reactor with parabolic reflector also wes usedin this experiment. The pH effect and flow rate effect on photobleaching of 0.012 g/l methyl orange solution, AtpH=3 Colour of methyl orange was completely bleached in 30 min with a 20 W UV lamp.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.05a
• /
• pp.50-50
• /
• 2015

양극산화를 통하여 타이타늄 산화물 나노튜뷰를 제조하고 전기화학적 촉매능을 향상시키기 위하여 다양한 방법의 촉매 도핑방법을 소개한다. 특히, 단일(single step) 양극산화법과 전기충격법(potential shock)를 통한 촉매도핑법을 비교하며 장횡비(high aspect ratio)가 높은 나노튜뷰에 균일하고 효율적인 촉매도핑법 및 도핑된 나노튜뷰를 활용한 물분해 실험결과를 소개한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.814-818
• /
• 2016

DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.