• Korean Journal of Materials Research
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• v.11 no.9
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.682-688
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• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.195-199
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• 2008

Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5$\sim$6 N in purity. However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the amount of the metal impurities but not effective in reducing the amount of dopants.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.2
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• pp.183-191
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• 1990

Polycrystalline CdS film have been prepared by coating a slurry constiting of CdS, CdCl2, various amount of InCl3 and propylene glycol on glass substrate and by sintering in a nitrogen atmosphere, and their sintering behaviors, electrical properties and optical properties have been investigated. As the amount of InCl3 increases, the enhancing effect of CdCl2 on sistering decreses resulting in a sharp decrease in optical transmittance and an increase in electrical resistivity. The carrier concentration is almost independent of InCl3 added due to the occurrence of chlorine doping and to the compensating effect of indium dopant. Microstructure an optical properties of CdS film, which contain CdCl2 and InCl3 before sintering, can be improved by sintering in a sealed boat.

• Korean Journal of Crystallography
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• v.2 no.1
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• pp.23-26
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• 1991

Amethysts were grown hydrothemally. The origin of amethyst color is iron center, which is developed by correlation between Fe3+(substitutional) and Fe3+ (interstitial)1). Crackless amethysts without smoky centers were grown only from major (1011) and minor (1101) seeds on K2c03 solutions. The violet color of amethyst depended on both iron concentration and amount of irradiation of r-ray. Increasing the iron concentration resulted in the deep violet color. Also amethysts color were changed to dark proportional to amount of irradiation. From visible spectra it was found that increasing the amount of irradiation affected not the character of individual iron center but the total number of iron centers.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.85-92
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• 2015

The 50 mole% HCl doped polyaniline(PAni) was synthesized by polymerization of aniline in the presence of hydrochloric acid and ammonium persulfate(APS) as dopant and oxidant, respectively. Then, conducting biodegradable cellulose acetate composite films were also prepared with PAni in acetone to find their applicability to antistatic packaging materials. The tensile strength of PCA05 film with 5 wt% of PAni was decreased by 27% from $377.1kg_f/cm^2$ for CA film itself to $275.2kg_f/cm^2$. Elongation was also decreased from 7.65% to 4.35%. Surface registance of $7.0{\times}10^9{\Omega}/sq$ could be achieved for the PCA containing 5 wt% of PAni. Therefore, this PCA05 film can be applied to antistatic package film for electronic board. In addition, decomposition temperature of these PCA films obtained by thermogravimetric analysis(TGA) was decreased with the amount of PAni in PCA films, and the final weight of char was directly proportional to PAni contents. From this thermal result we can calculate the content of PAni in unknown PCA films.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.909-915
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• 1997

To improve the electro-induced strain and to decease the hysteresis of that W $O_3$dopant of which amount is 0~0.8wt% was added to (P $b_{0.73}$/B $a_{0.27}$)(Z $r_{0.75}$/ $Ti_{0.25}$) $O_3$+0.1wt% $Y_{2}$/ $O_3$ceramics. At the specimen with 0.4 wt% W $O_3$the electromechanical coupling coefficient( $K_{31}$ ) showed the maximum value of 23.6% at D.C 10 kV/cm electric field. At the same W $O_3$addition amount the piezoelectric constant( $d_{31}$ ) and the electro-induced strain($\Delta$$\ell$/$\ell$)showed the highest values of 182$\times$10$^{-12}$ [C/N] 210$\times$10$^{-6}$ $\Delta$$\ell$/$\ell$at D.C. 10 kV/cm electric field. respectively0 kV/cm electric field. respectivelyvely.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.161-164
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• 1997

Thin films of CdS were prepared from an aqueous solution containing Cd(Ac)$_2$, NH$_4$OH, NH$_4$Ac and (NH$_2$)$_2$CS for photovoltaic application. Growth rate of CdS films was increased with increasing temperature of reactive solution and with decreasing concentration of NH$_4$OH. Optical transmittances were more than 60%, independent with temperature and concentrations, and were changed with thickness of CdS films. Growth films mostly showed the presence of polycrystallines with mixed cubic and condition. The resistivities of CdS were decreased by doping boron and criticial amount of dopant was determined.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.87-92
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• 2000

Transparent and electrical conducting tin oxide thin films were fabricated on soda lime silicate glass by thermal chemical vapour deposition technique. Thin films were deposition from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant and 1,1,1,2-tetrafluoroethane as a doping material. Electrical properties of fabricated tin oxide films were changed depending on substrate temperature, and the amount of dopant. Resistivity of tin oxide films was reduced by doping fluorine or heat treatment. Thin films can be optimized at TMT flow rate of 8sccm, oxygen flow rate of 150sccm, 1,1,1,2-tetrafluoroethane floe rate of 300sccm and substrate temperature $380^{\circ}C$. In this conditions, the lowest resistivity of tin oxide films were $9$\times$10^{-4}$ $\Omega$cm.

• Journal of the Korean Ceramic Society
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• v.13 no.3
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• pp.13-20
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• 1976

The magnetic properties, especially the magnetostriction, of ferroxplana $Zn_{1-x}$$M_X$Y(x=0.0, 0.2, 0.4, 0.6) were investigated at room temperature. In general, the Curie temperature and the permeability of ferroxplana $Zn_{1-X}$$Mn_X$Y increased while the amount of the other phase decrease with increased concentration of dopant $Mn^{2+} for $Zn^{2+}. The magnetostriction constnats K1, K2, K3 and K4 for ZnY were ＋0.3, -5.0, -4.3 and $-4.8{\times}$$10^{-6} while that for 4Zn^0.8$ $Mn^0.2$Y were ＋2.5, -5.4, -6.0 and $-3.4{\times}10^{-6}$, respectively.