• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.316-319
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• 2000

In the case of immobilizing of glucose oxidase into polypyrrole (PPy) using electrosynthesis, the glucose oxidase (GOx) forms a coordinate bond with the polymer's backbone. However, because of intrinsic insulation and net-chain of the enzyme, the charge transfer and mass transport are obstructed during the film growth. Therefore, the film growth is dull. We synthesized the enzyme electrode by electropolymerization added some organic solvent, A formative seeds of film growth is delayed by adding the solvent. The delay is induced by radical transfer between the solvent and pyrrole monomer. In the case of adding ethanol, the radical transfer shares the contribution of dopant between electrolyte anion and GOx polyanion. This may lead to increase amount of immobilized the enzyme in ppy. However, adding tetrahydrofuran (THF), the radical transfer is more brisk, resulting in short chained polymer. Therefore, the doping level is lowered and then amount of immobilized of enzyme is decreased. For the UV absorption spectra of synthetic solution before synthesis and after, in the case of ethanol added, the optical density was slightly decreased for the GOx peaks. It suggests amount of GOx in the solution was decreased and amount of GOx in the film was increased. We established qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. It is due to radical transfer reaction. The radical transfer shares the contribution of dopant between small and fast electrolyte anion and big and slow GOx polyanion.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.105-108
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• 2005

We demonstrate an electro-optical device based on the flexoelectric effect of a short-pitched cholesteric liquid crystal. By using a dual-frequency switchable nematic, a small amount of chiral dopant and a small amount of phase-separated polymer localized on the surface, we were able to create a device that operates in amplitude (flexoelectric) and phase(dielectric) modes. At high frequency the dual frequency liquid crystal suppresses the phase mode at higher voltage, which improves the switching speed, and thereby preserving the in-plane-switching mode.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.551-557
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• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.165-173
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• 1996

We prepared polythiophene and poly(3-methylthiophene) films, known as conducting polymer, by electrochemical method. Polythiophene and poly(3-methylthiophene) films were doped and undoped dopant for the studing the understanding of doping mechanism and possible application to the color change switch. We observed that the anodic, cathodic wave and absorption spectra were slightly changed during doping and undoping process in polythiophene. It shows that doping and undoping process were showed some difference by the appearance and disappearance of polaron and bi-polaron. In the relation of the peak of oxidative current density and potential sweep rate of cyclic voltammograms, the amount of dopant in polythiophene film was homogeneously increased at low scan rate. This also can be applied to the poly(3-methlythiophene).

• 한국세라믹학회지
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• 제26권2호
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• pp.258-266
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• 1989

The effects of grain size and dopant ZnO on the photoelectrochemical conversion in TiO2 ceramic electrodes have been investigated. The photocurrent increases with increasing grain size in the undoped TiO2 ceramic electrode. In ZnO-doped TiO2 electrodes, the photocurrent decreases with increasing ZnO up to 0.4 wt% due to decrease of donor concentration, and then with further addition of ZnO, photocurrent increases according to the formation of second phase. However, the photoresponse appears at wavelength of 420nm, which is very close to the energy band gap of TiO2, regardless of grain size and amount of ZnO.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.346-350
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• 2002

The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of N $d_{1.8-x}$C $a_{x}$B $a_{2.4}$C $u_{3.4}$ $O_{y}$ (x = 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1% $O_2$ in Ar. Magnetization measurements revealed that the critical temperatures( $T_{c}$) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x = 0.0 to 0.15, respectively, and thus critical current densities( $J_{c}$) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in NdB $a_2$C $u_3$ $O_{y}$(Nd123) and N $d_4$B $a_2$C $u_2$ $O_{10}$(Nd422) were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of $T_{c}$ is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.t.opant.t.t.t.t.t.

• 한국광학회지
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• 제5권4호
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• pp.499-504
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• 1994

불꽃가수분해 증착방법으로 $SiCl_{4}$, TMB, $TiCL_{4}$등을 사용하여 Ti doped BSG 실리카 입자박막을 실리콘 기판위에 증착하고 증착된 입자층을 녹여서 집적광학용 박막을 제작하였다. 박막의 증착 속도는 $0.5{\mu}m$분 이상으로서 수십 ${\mu}m$의 후막을 빠르게 증착할 수 있었으며 $TiO_{2}$의 첨가량에 따라 BSG 박막의 굴절률을 0.3% 이상 변화시킬 수 있었다. 그 결과 통신용 광섬유와 크기 및 굴절률 분포가 BSG박막의 굴절률을 0.3% 이상 변화시킬 수 있었다. 그 결과 통신용 광섬유와 크기 및 굴절률 분포가 유사한 광도파로를 제작하였다. 보통 B의 도판트로는 $BCl_{3}$를 쓰나 여기서는 TBM를 사용한 결과 TBM도 B의 도판트로 적합함을 알았다. B의 첨가에 의하여 실리카 입자막의 녹는점을 $1200^{\circ}C$로 낮출 수 있었다. 또한 FTIR에 의한 박막의 조성비분석 결과 BSG박막에 $B_2O_3$ 함량이 최대 10mol%로 나타났다.

• Current Photovoltaic Research
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• 제12권2호
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• pp.31-36
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• 2024

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiO_x) and poly-Si. In poly-Si/SiO_x based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO₂) as a doping barrier before doping and analyzed the barrier effect of SiO₂. In the experiments, p⁺ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high V_oc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied V_oc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

• 한국광학회지
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• 제7권4호
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• pp.440-444
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• 1996

10Gbps급 이상의 광통신에 적합한 성능을 가지는 InAlAs/InGaAs 다중양자우물 구조(MQW) 애벌런치 광다이오드(APD)를 제작하였다. 본 논문에서는 MBE로 성장된 에피구조에서 높은 농도로 도핑된 field butter layer의 Be dopant의 다중양자우물 구조로의 indiffusion이 소자의 암전류 특성과 이득 특성에 이치는 영향을 분석하였다. Be의 indiffusion은 작은 양으로도 소자의 특성에 큰 영향을 끼칠 수 있음이 보여졌으며 spacer layer를 삽입함으로써 높은 대역폭을 유지하면서 낮은 암전류 특성을 나타내는 소자를 제작함으로써 space layer의 삽입이 indiffusion의 영향을 효과적으로 막을 수 있음을 보였다.