• 제목/요약/키워드: dopant amount

검색결과 62건 처리시간 0.03초

다층 유기 초박막 EL소자에 관한 연구 (A Study on Organic Multithin Layer EL Devices)

  • 조성렬;김종진;박종은;손원근;임기조;박수길;이주성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1516-1518
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    • 1997
  • Recently lots of study on EL have been performed by other researcher. Organic multilayer system of TPD/$Alq3$ and Rhodamine 101 perchrolate/Alq3/ was constructed on ITO and finally Al as cathodic electrode. The thickness of emitting layer was $150{\AA}$ and device was fabricated by changing amount of dopant. AFM image for each surface morphology and EL spectra using fluoromax-2 was investigated. Electrical and emission properties of EL device was dependent on deposition method and condition.

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A Technique to Circumvent V-shaped Deconvolution Error for Time-dependent SRAM Margin Analyses

  • Somha, Worawit;Yamauchi, Hiroyuki;Yuyu, Ma
    • IEIE Transactions on Smart Processing and Computing
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    • 제2권4호
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    • pp.216-225
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    • 2013
  • This paper discusses the issues regarding an abnormal V-shaped error confronting algebraic-based deconvolution process. Deconvolution was applied to an analysis of the effects of the Random Telegraph Noise (RTN) and Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. This paper proposes a technique to suppress the problematic phenomena in the algebraic-based RDF/RTN deconvolution process. The proposed technique can reduce its relative errors by $10^{10}$ to $10^{16}$ fold, which is a sufficient reduction for avoiding the abnormal ringing errors in the RTN deconvolution process. The proposed algebraic-based analyses allowed the following: (1) detection of the truncating point of the TD-MV distributions by the screening test, and (2) predicting the MV-shift-amount by the assisted circuit schemes needed to avoid the out of specs after shipment.

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Ion and solvent transport during the redox reaction of Polypyrrole and poly(N-substituted pyrrole) films in aprotic solutions

  • Lee Hochun;Kwak Juhyoun
    • 전기화학회지
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    • 제1권1호
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    • pp.52-54
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    • 1998
  • Polypyrrole (PPy), Poly(N-methyl Pyrrole) (PMPy) and Poly(N-phenyl Pyrrole) (PPhPy) films in acetonitrile (Af and propylene carbonate (PC) have been compared focusing on their different ion and solvent transport behaviors. During the redox reaction of PPy films, cation, anion, and solvent take part in mass transport. Whereas during the redox reaction of PMPy and PPhPy films, anion and solvent transport are dominant but cation transport is negligible. In addition, solvent transport occurs in the same direction with cation transport for PPy films. On the other hand, solvent transport occurs in the opposite direction to anion transport for PMPy films, and it changes its amount and direction with the kind of the dopant anion and the solvent used at electropolymerization for PPhPy films.

Examination of Diffusion Process for High-speed Avalanche Photodiode Fabrication

  • Ilgu Yun;Hyun, Kyujg-Sook;Kwon, Yong-Hwan;Pyun, Kwang-Eui
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.954-958
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    • 2000
  • The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

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Study of Zinc Diffusion Process for High-speed Avalanche Photodiode Fabrication

  • Ilgu Yun;Hyun, Kyung-Sook;Pyun, Kwang-Eui
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.731-734
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    • 2000
  • The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

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Synergistic Effect on the Photocatalytic Degradation of 2-Chlorophenol Using $TiO_2$Thin Films Doped with Some Transition Metals in Water

  • 정오진
    • Bulletin of the Korean Chemical Society
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    • 제22권11호
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    • pp.1183-1191
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    • 2001
  • The metallorganic chemical vapor deposition (MOCVD) method has been used to prepare TiO2 thin films for the degradation of hazardous organic compounds, such as 2-chlorophenol (2-CP). The effect of supporting materials and metal doping on the photocatalytic activity of TiO2 thin films also has been studied. TiO2 thin films were coated onto various supporting materials, including stainless steel cloth(SS), quartz glass tube (QGT), and silica gel (SG). Transition metals, such as Pd(II), Pt(IV), Nd(III) and Fe(III), were doped onto TiO2 thin film. The results indicate that Nd(Ⅲ) doping improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 ${\mu}m)$ appears to be the best support. An optimal amount of doping material at 1.0 percent (w/w) of TiO2-substrate thin film gives the best photodegration of 2-CP.

수직경사응고(VGF)법에 의한 Si 도핑 GaAs 단결정 성장시 $B_{2}O_{3}$ 첨가에 따른 캐리어 농도 변화 (Control of carrier concentrations by addition of $B_{2}O_{3}$ in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth)

  • 배소익;한창운
    • 한국결정성장학회지
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    • 제19권2호
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    • pp.75-78
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    • 2009
  • PBN 도가니를 이용하여 Si이 도핑된 GaAs 단결정을 수직경사 응고법으로 성장시켰다. PBN 도가니에 산화막인 $B_{2}O_{3}$의 양을 $0{\sim}0.2wt%$ 범위에서 변화시키면서, 성장 후 캐리어 농도를 측정하였다. $B_{2}O_{3}$ 첨가량이 증가함에 따라, 초기 0.1 정도의 Si 도판트의 편석계수는 0.01 부근까지 급격히 감소하고, 동시에 캐리어 농도도 감소하는 것을 알 수 있었다. 이는 성장도중 도판트인 Si이 $B_{2}O_{3}$과 반응하며 도너인 Si 양을 감소시키며, 동시에 억셉터인 B 양을 증가시키기 때문으로 보인다. 한편 PBN 도가니 내면에 얇은 유리질의 $B_{2}O_{3}$층 형성이 용이한 고온 산화막 처리가 결함감소에 효과적임을 확인하였다.

간소화 시스템적용을 위한 자기특성 (A Study on the Magnetic Properties of Ceramics Superconductors for Simpllified Testing System)

  • 이상헌
    • 전기학회논문지
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    • 제61권2호
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    • pp.339-341
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    • 2012
  • The high Tc superconductor of YBCO system with the nominal composition of precursor was prepared from mixed powders of $Y_2O_3$, $BaCO_3$, CuO and $TiO_2$ by the thermal pyrolysis method. The effect of $TiO_2$ doping to Y based ceramics superconductors fabricated by the thermal pyrolysis reaction, to investigate the effect of the dopant on the superconductivity. The voltage appearing across the field-cooled HTS sample increased with external magnetic field. The improvement of critical current property as well as the mechanical property is important for the application. The improvement of the critical current can be achieved by forming the nano size defect working as a flux pining center inside the superconductor. We simply added $TiO_2$ to starting materials to dope $TiO_2$ and observed an increase in the trapped field and the critical current density up to at least 5 wt % $TiO_2$. The $TiO_2$ was converted to fine $BaTiO_3$ particles which were trapped in YBCO matrix during the sintering process. We observed a peak effect of Jc that can be attributed to $TiO_2$ doping and results suggest that introducing a proper amount of pinning centers can significantly enhance current density.

도핑량에 따른 다결정 3C-SiC 마이크로 공진기의 특성 (Characteristics of polycrystalline 3C-SiC micro resonators with doping concentrations)

  • 마이 피 훙;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.131-131
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    • 2009
  • This paper describes the fabrication and characteristics of polycrystalline (poly) 3C-SiC microresonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ in-situ N-doping concentrations. In this work, the crystallinity, carrier concentration and surface morphology of the grown thin films were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The 1.2 ${\mu}m$ thick cantilvers and the 0.4 ${\mu}m$ thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC microresonators are controllable by adjusting the doping concentrations.

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결정립 미세화된 Cu-Zn-Al 형상기억합금의 열처리 조건에 따른 변태거동 (Transformation Behavior on Heat Treatment Condition in Grain-Refined Cu-Zn-Al Shape Memory Alloy)

  • 강조원;장우양;양권승
    • 열처리공학회지
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    • 제4권4호
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    • pp.34-43
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    • 1991
  • A small amount of misch metal and/or Zr was added as a dopant to 70.5wt----Cu-26wt----Zn-3.5wt----Al shape memory alloy in order to study the effect of grain refinement and heat treatments on the transformation behavior, stabilization of martensite, and shape memory ability. It was found that the addition of misch metal and Zr was very effective for reducing the grain size. The fracture mode has been changed from intergranular brittle fracture to ductile fracture with void formation and coalescence by the addition of misch metal and Zr. Aging of the ${\beta}$-phase decreases the $M_s$ temperature, but that of the martensite phase increases the $A_s$ temperature. The hysteresis of transformation temperature ${\Delta}T(A_s-M_s)$ has an increasing tendancy by grain refinement. The crystal structure of martensite was identified as monoclinic structure. As the grain size decreased, martensite stabilization more easily occured and the shape, memory ability has been reduced by the grain size refined.

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