• 한국재료학회지
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• 제11권9호
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• 한국세라믹학회지
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• 제53권6호
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• pp.682-688
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• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• 한국결정성장학회지
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• 제18권5호
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• pp.195-199
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• 2008

반도체용 규소 원료는 11 N급의 고순도이나 가격이 고가이고 또한 생산이 제한되어서 폭발적인 태양전지의 수요를 따르지 못하고 있어 저급(5$\sim$6 N)의 UMG(Upgraded Metallurgical Grade)를 사용하자 하는 노력이 진행 중이다. 이 5$\sim$6 N급에서는 dopant 원소인 붕소(B)외 인(P)의 농도가 1 ppm 이상 존재한다. 이들 원료를 사용하여서 결정 성장을 하였을 경우에 존재하는 여러 불순물들의 편석계수(segregation coefficient)를 활용하여 화학적, 전기적 성질을 예상 하여본 결과 결정성장 초기에는 붕소(B)의 농도가 인(P) 보다 높아 p영역이 발생하고 후반부에는 인의 농도가 붕소 보다 높아 n 형 기판이 생성됨을 보았다. 또한 응고속도를 조절하여 여러 불순물을 제거하고자 히는 노력은 편식계수가 적은 금속 일소들의 제거에는 효과적이나 편석계수가 큰 붕소와 인의 제거에는 효과가 크지 않음을 예상 할 수 있다.

• 대한전기학회논문지
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• 제39권2호
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• pp.183-191
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• 1990

Polycrystalline CdS film have been prepared by coating a slurry constiting of CdS, CdCl2, various amount of InCl3 and propylene glycol on glass substrate and by sintering in a nitrogen atmosphere, and their sintering behaviors, electrical properties and optical properties have been investigated. As the amount of InCl3 increases, the enhancing effect of CdCl2 on sistering decreses resulting in a sharp decrease in optical transmittance and an increase in electrical resistivity. The carrier concentration is almost independent of InCl3 added due to the occurrence of chlorine doping and to the compensating effect of indium dopant. Microstructure an optical properties of CdS film, which contain CdCl2 and InCl3 before sintering, can be improved by sintering in a sealed boat.

• 한국결정학회지
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• 제2권1호
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• pp.23-26
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• 1991

수열 육성법으로 육성하고 seed의 방향, dopant 의 농도, y-선 조사량 등의 조건 변화가 성장된 자수정의 품질에 미치는 영향에 대해 고찰하였다. K2CO, 용액속에서 (10il) 면과 관련된 major 및 (1101)면과 관련된 minor seed가 자수정 육성에 적 합한 seed임을 알 수 있었고 이들과 다른 방향을 seed로 하여 결정을 육성하였을 경우 crack과 색 결함 등이 발견되었다. 자수정의 발색은 치환형 및 침 입형 철이온의 강호작용에 의해 형성된 color center에 의한 것이며 자색(자색)의 농담(농담)은 철이온의 농도 및 Y-선 조사량에 의해 결정되었다. 동일한 육성조건으로 성장된 자수정에 y-선 조 사량을 달리한 결과 자색의 농담이 연속적으로 변 화함을 관찰할 수 있었고 시 편을 visible spectrum으로 분석한 결과 Y-선 조사량이 증가해도 개개의 color center의 특성은 변하지 않고 전체적으로 colorcenter의 갯수가 증가하여 자색이 짙어짐을 알 수 있었다.

• 한국응용과학기술학회지
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• 제32권1호
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• pp.85-92
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• 2015

생분해성 고분자인 셀룰로오스 아세테이트(CA)를 매트릭스로 용액 중합된 HCl이 50% 정도 도핑된 PAni를 첨가하여 도전성 PCA 복합 필름을 제조하여 기계적, 전기적 특성 및 표면 morphology를 고찰하였다. PCA 복합 필름의 인장강도는 PAni 함유량 5 wt% 인 경우 순수 CA 필름($377.1kg_f/cm^2$)에 비해 27% 정도 감소된 $275.2kg_f/cm^2$를 나타내었으며, 신율도 7.65%에서 4.35% 정도로 감소하였다. 표면저항은 PAni의 함량에 따라 감소하였으며, PAni 함유량이 5 wt%인 PCA05의 경우 $7.0{\times}10^9{\Omega}/sq$로 정전기 방지용 필름으로 사용이 가능할 정도였다. 표면 정전기량의 소멸 속도도 PAni 함량에 따라 비례하여 빨라짐을 확인하였다. PCA 복합 필름의 열적 안정성은 PAni 함량이 늘어남에 따라 분해온도가 낮아졌으며, 최종 재(char)의 함량은 PAni의 함량에 비례하였다. 최종 재의 함량을 이용하여 미지의 PCA 복합 필름 중의 PAni의 분율을 계산할 수 있을 것으로 판단된다.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.909-915
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• 1997

To improve the electro-induced strain and to decease the hysteresis of that W $O_3$dopant of which amount is 0~0.8wt% was added to (P $b_{0.73}$/B $a_{0.27}$)(Z $r_{0.75}$/ $Ti_{0.25}$) $O_3$+0.1wt% $Y_{2}$/ $O_3$ceramics. At the specimen with 0.4 wt% W $O_3$the electromechanical coupling coefficient( $K_{31}$ ) showed the maximum value of 23.6% at D.C 10 kV/cm electric field. At the same W $O_3$addition amount the piezoelectric constant( $d_{31}$ ) and the electro-induced strain($\Delta$$\ell$/$\ell$)showed the highest values of 182$\times$10$^{-12}$ [C/N] 210$\times$10$^{-6}$ $\Delta$$\ell$/$\ell$at D.C. 10 kV/cm electric field. respectively0 kV/cm electric field. respectivelyvely.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.161-164
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• 1997

Thin films of CdS were prepared from an aqueous solution containing Cd(Ac)$_2$, NH$_4$OH, NH$_4$Ac and (NH$_2$)$_2$CS for photovoltaic application. Growth rate of CdS films was increased with increasing temperature of reactive solution and with decreasing concentration of NH$_4$OH. Optical transmittances were more than 60%, independent with temperature and concentrations, and were changed with thickness of CdS films. Growth films mostly showed the presence of polycrystallines with mixed cubic and condition. The resistivities of CdS were decreased by doping boron and criticial amount of dopant was determined.

• 한국표면공학회지
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• 제33권2호
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• pp.87-92
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• 2000

Transparent and electrical conducting tin oxide thin films were fabricated on soda lime silicate glass by thermal chemical vapour deposition technique. Thin films were deposition from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant and 1,1,1,2-tetrafluoroethane as a doping material. Electrical properties of fabricated tin oxide films were changed depending on substrate temperature, and the amount of dopant. Resistivity of tin oxide films was reduced by doping fluorine or heat treatment. Thin films can be optimized at TMT flow rate of 8sccm, oxygen flow rate of 150sccm, 1,1,1,2-tetrafluoroethane floe rate of 300sccm and substrate temperature $380^{\circ}C$. In this conditions, the lowest resistivity of tin oxide films were $9$\times$10^{-4}$ $\Omega$cm.

• 한국세라믹학회지
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• 제13권3호
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• pp.13-20
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• 1976

The magnetic properties, especially the magnetostriction, of ferroxplana $Zn_{1-x}$$M_X$Y(x=0.0, 0.2, 0.4, 0.6) were investigated at room temperature. In general, the Curie temperature and the permeability of ferroxplana $Zn_{1-X}$$Mn_X$Y increased while the amount of the other phase decrease with increased concentration of dopant $Mn^{2+} for $Zn^{2+}. The magnetostriction constnats K1, K2, K3 and K4 for ZnY were ＋0.3, -5.0, -4.3 and $-4.8{\times}$$10^{-6} while that for 4Zn^0.8$ $Mn^0.2$Y were ＋2.5, -5.4, -6.0 and $-3.4{\times}10^{-6}$, respectively.