• Title/Summary/Keyword: domain wall pinning

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Pinning potential of a perpendicular magnetic domain wall due to a point defect

  • Song, Kyungmi;Lee, Kyung-Jin
    • Proceedings of the Korean Magnestics Society Conference
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    • 2013.12a
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    • pp.139-140
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    • 2013
  • We investigate effect of a point defect on the pinning potential for a perpendicular magnetic domain wall based on the NEB method. We find that this method can give a reasonable value for the pinning potential and allows us to study the effect of various geometrical and magnetic properties on the pinning potential. In the presentation, we will discuss the effect of Ku and wire width on the pinning potential in detail.

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Initial Magnetization and Coercivity Mechanism in Amorphous TbxCo1-x Thin Films with Perpendicular Anisotropy

  • Kim, Tae-Wan;Lee, Ha-Na;Lee, Hyun-Yong;Lee, Kyoung-Il
    • Journal of Magnetics
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    • v.15 no.4
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    • pp.169-172
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    • 2010
  • The coercivity mechanism in permanent magnets was analyzed according to the effects of domain nucleation and domain wall pinning. The coercivity mechanism of a TbCo thin film with high perpendicular magnetic anisotropy was considered in terms of the local inhomogeneity in the thin film. The initial magnetization curves of the TbCo thin films demonstrated domain wall pinning to be the main contributor to the coercivity mechanism than domain nucleation. Based on the coercivity model proposed by Kronmuller et al., the inhomogeneity size acting as a domain wall pinning site was determined. Using the measured values of perpendicular anisotropy constant ($K_u$), saturation magnetization ($M_s$), and coercivity ($H_c$), the inhomogeneity size estimated in a TbCo thin film with high coercivity was approximately 9 nm.

The Effect of Domain Wall on Defect Energetics in Ferroelectric LiNbO3 from Density Functional Theory Calculations

  • Lee, Donghwa
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.312-316
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    • 2016
  • The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

Current Density and Thickness Effects on Magnetic Properties of Electrodeposited CoPt Magnetic Films

  • Kim, Hyeon Soo;Jeong, Soon Young;Suh, Su Jeong
    • Journal of Magnetics
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    • v.18 no.4
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    • pp.417-421
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    • 2013
  • The dominant magnetization reversal behavior of electrodeposited CoPt samples with various thicknesses deposited at different current densities was the domain wall motion by means of wall pinning. The magnetic interaction mechanism was dipolar interaction for all samples. The dipolar interaction strength was significantly affected by the sample thickness rather than by the current density, while the magnetic properties were closely related to the current density.

Magnetization Reversal and Magnetic Switching Volume in Electrodeposited CoPt Magnetic Films with Different Thickness (전기도금법으로 제작한 두께가 다른 CoPt 자성막의 자화역전과 자기역전 부피)

  • Kim, Hyeon-Soo;Jeong, Soon-Young;Lee, Chang-Hyeong;Suh, Su-Jeong
    • Journal of the Korean Magnetics Society
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    • v.21 no.6
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    • pp.193-197
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    • 2011
  • The thickness dependence of the magnetic switching volumes in electrodeposited CoPt films was investigated from the magnetization reversal and the magnetic interaction behavior. As the sample thickness is increased, the field difference between the wall pinning field ($H_{DW}$) and the nucleation field ($H_N$) as well as the absolute value of ${\Delta}$area are increased. Therefore, the decrement tendency of the switching diameter with increasing sample thickness can be well explained by the domain wall motion controlled by the domain wall pinning and the strength of dipolar interaction.

CHARACTERIZATION OF MAGNETIZATION BEHAVIOR IN Co/Pd PERPENDICULAR ANISOTROPIC MULTILAYERS

  • Oh, Hoon-Sang;Joo, Seung-Ki
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.655-658
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    • 1995
  • Magnetization behavior of sputter-deposited Co/Pd multilayers were characterized, and it has been found that even when the multilayers are sputtered at low pressure (10 mTorr), the coercivity of the multilayers can be increased to large extent without noticeable change of saturation magnetization by increasing the deposition pressure of Pd underlayer. It turned out that the surface topology of Pd underlayer gets rough as deposition pressure increases, which consequently affects the magnetization reversal mode of Co/Pd multilayers from domain wall motion to magnetic spin rotation. The enhancement of coercivity is attributed to the domain wall pinning effect which is comected with the surface roughness of Pd underlayer on which Co/Pd multilayers grow.

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Magnetic Domain Walls at the Edges of Patterned NiO/NiFe Bilayers (패턴된 이중박막의 자구벽 특성조사)

  • Hwang, D.G.;Lee, S.S.
    • Journal of the Korean Magnetics Society
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    • v.13 no.4
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    • pp.176-181
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    • 2003
  • The magnetic domain walls at the edges of a large patterned and exchanged-biased NiO(10-60 nm)/NiFe(10 nm) bilayers and their motions with applied field were investigated by magnetic force microscopy. Three kinds of domain walls, namely, head-to-head zig-zag and tail-to-tail zig-zag Bloch walls and straight Neel walls were found at specific edges of the unidirectional biased NiO(30 nm)/NiFe(10 nm) bilayer having the exchange biasing field (H$\sub$ex/) of 21 Oe. No walls were observed for the strong exchange-biased bilayer (60 nm NiO, H$\sub$ex/ = 75 Oe), while the amplitude of the zig-zag domain increased with decreasing exchange biasing. This may be explained by mutual restraint between H$\sub$ex/ and the demagnetization field of edge. We similarly investigated the magnetization reversal process, the subsequent motion of the walls and identified the pinning and nucleation sites during reversal.