• Composites Research
• /
• 제28권5호
• /
• pp.270-276
• /
• 2015

Polyvinylidene fluoride (PVDF)-based nanocomposites are fabricated by incorporation of boron nitride (BN) nanosheets with anisotropic orientation for a potential high thermal conducting ferroelectric materials. The PVDF is dissolved in dimethylformamide (DMF) and homogeneously mixed with exfoliated BN nanosheets, which is then cast into a polyimide film under application of high magnetic fields (0.45~10 T), where the direction of the filler alignment was controlled. The BN nanosheets are exfoliated by a mixed way of solvothermal method and ultrasonication prior to incorporation into the PVDF-based polymer suspension. X-ray diffraction, scanning electron microscope and thermal diffusivity are measured for the characterization of the polymer nanocomposites. Analysis shows that BN nanosheets are exfoliated into the fewer layers, whose basal planes are oriented either perpendicular or parallel to the composite surfaces without necessitating the surface modification induced by high magnetic fields. Moreover, the nanocomposites show a dramatic thermal diffusivity enhancement of 1056% by BN nanosheets with perpendicular orientation in comparison with the pristine PVDF at 10 vol % of BN, which relies on the degree of filler orientation. The mechanism for the magnetic field-induced orientation of BN and enhancement of thermal property of PVDF-based composites by the BN assembly are elucidated.

• 한국광물학회지
• /
• 제29권4호
• /
• pp.167-177
• /
• 2016

신제3기 마이오세(Miocene)의 플라야호(playa lake) 환경에서 형성된 증발형 붕소 광상인 터키의 비가디치(Bigadiç) 광상과 크르카(Kırka) 광상에서 산출되는 점토에서 각각 $LiO_2$가 0.02-0.21%, 0.16-0.30% 함유되어 있다. 이는 점토에 리튬을 함유한 헥토라이트(hectorite)가 함유되어 있기 때문으로 확인되었으며 붕소 광석을 처리하고 남은 광미도 $LiO_2$ 0.04-0.26% 포함하고 있는 것으로 보고된다. 약 0.18%의 리튬 함량을 보이는 비가디치 및 크르카 광상 점토 시료 각 1개에 대하여 추출 가능한 리튬의 양을 알아보았다. 본 연구의 XRD 분석 결과 크르카 광상의 시료에는 25.7%, 비가디치 시료에는 79.7%의 헥토라이트가 함유되어 있었다. 이들 점토가 리튬 광석으로 활용될 수 있는지 알아보기 위해 (1) 산 처리 용출 및 (2) 열처리 침출 방법으로 리튬을 추출하였다. 두 광상 시료 모두 0.25 M 염산과의 반응시간에 따라 용출되는 리튬의 양이 증가하였으나 10시간 이상 반응시켰을 때는 용출되는 리튬의 양이 더 이상 증가하지 않았다. 10시간 이상 반응시켰을 때, 크르카 광상 점토 시료에서 89%의 리튬이 용출되었으며 비가디치 광상 점토 시료에서 71%의 리튬이 용출되었다. $CaCO_3$ 및 $CaSO_4$와 함께 $1,100^{\circ}C$에서 2시간 열처리하여 크르카 광상 시료에서 87%, 비가디치 광상 시료에서 82%의 리튬을 추출하였다. 크르카 광상의 점토 시료는 산 처리로 더 많은 양의 리튬을 추출할 수 있었으며 비가디치 광상의 시료는 열처리 방법으로 리튬을 더 많이 추출할 수 있었다.

• 한국세라믹학회지
• /
• 제34권9호
• /
• pp.941-948
• /
• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• 한국재료학회지
• /
• 제12권3호
• /
• pp.220-224
• /
• 2002

The oxide scales formed on $Ni_3Al$-7.8%Cr-1.3%Zr-0.8%Mo-0.025%B after oxidation at 900, 1000 and 110$0^{\circ}C$ in air were studied using XRD, SEM, EPMA and TEM. The oxide scales consisted primarily of $NiO,\; NiAl_2O_4,\;{\alpha}-Al_2O_3,\; monoclinic-ZrO_2,\; and \;tetragonal-ZrO_2$. The outer layer of the oxide scale was rich in Ni-oxides, whereas the internal oxide stringers were rich in Al-oxides and $ZrO_2$. Within the above oxide scales, Cr and Mo tended to exist as dissolved ions.

• 대한화학회지
• /
• 제33권4호
• /
• pp.379-387
• /
• 1989

붕소와 실리콘으로 이루어진 보로실리케이트의 합성과정과 합성된 보로실리케이트의 조성, 산성도 및 흡착특성을 조사하였다. 합성속도는 온도와 $Na_2O$ 농도를 높여주면 빨라졌으나, 그 증진요인은 조건에 따라 달랐다. 합성과정은 용해된 반응물이 핵심이나 결정의 표면에 반응하여 결정이 성장되는 용액전달기구로 모사될 수 있었다. 암모니아와 프로필렌의 승온 탈착실험, 프로필렌과 프로판의 흡착 등온선으로부터 합성된 보로실레케이트의 흡착특성을 고찰하였다.

• 상하수도학회지
• /
• 제27권6호
• /
• pp.771-778
• /
• 2013

Gas hydrate (GH) process is a new desalination technology, where GH is a non- stoichiometric crystalline inclusion compounds formed by water and a number of gas molecules. Seawater GH is produced in a low temperature and a high pressure condition and they are separated from the concentrated seawater. The drawback of the GH process so far is that salt contents contained in its product does not meet the fresh water quality standard. This means that the GH process is not a standalone process for seawater desalination and it needs the help of other desalting process like reverse osmosis (RO). The objective of this study is to investigate the effect of GH process on energy saving for RO process in seawater desalination. The GH product water quality data, which were obtained from a literature, were used as input data for RO process simulation. The simulation results show that the energy saving effect by the GH process is in a range of 68 % to 81 %, which increases as the salt removal efficiency of the GH process increases. Boron (B) and total dissolved solids (TDS) concentrations of the final product of the hybrid process of GH and RO were also investigated through the RO process simulation to find relavant salt rejection efficiency of the GH process. In conclusion, the salt rejection efficiency of the GH process should exceed at least 78% in order to meet the product water quality standards and to increase the energy saving effect.

• 방사성폐기물학회지
• /
• 제3권4호
• /
• pp.335-340
• /
• 2005

Single-pass flow-through (SPFW) 방법에 의한 유리고화체의 용해율 측정에서 정밀도를 구하기 위하여 연구소간 실험프로그램의 하나로서 붕규산유리고화체의 정용해율을 구하였는데, 이 SPFT 방법은 American Society for Testing and Materials (ASTM)에서 표준화를 위하여 작성되었다. 이를 위해 100/200 mesh 크기의 모의 저방사능 유리고화체 분말시료를 $70^{\circ}C$, 알곤 분위기에서 SPFT 방법으로 리튬 완충용액 (pH=10)을 이용하여 용해실험을 시도하였다. 얻어진 용출액 중 규소와 붕소의 농도에 따라 용해율의 변화를 구한 결과, 유리의 정용해율이 $2.7\times10^{-5}g{\cdot}m^{-2}{\cdot}s^-1$ 부근으로 나타났다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.200-200
• /
• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.