• Progress in Superconductivity
• /
• v.1 no.1
• /
• pp.20-25
• /
• 1999

We constructed a high-$T_c$ scanning SQUID microscope (SSM) operating in the liquid nitrogen. We used a washer-type YBCO SQUID with inner and outer dimensions of $12{\mu}m$ and $36{\mu}m$, respectively, which was grown on the $SrTiO^3$ bicrystal substrate. The sample, rather than SQUID, was scanned using two stepping motors. We also developed readout electronics, stepping motor controller, and the software for system control and data display. We took images of various samples using our SSM and found that the spatial resolution is about $40{\mu}m$ and noise level is lower than $10^{-7}T/{\surd}Hz$ at 100 Hz and higher at lower frequencies. The noise level was much higher than that of a typical SQUID due to the other coupling from the electric parts. We present a simple argument on the inductive coupling between the sample and the SQUID which should be under-stood for the proper interpretation of the obtained images. By comparing the measured data with the simulation results the gap between the SQUID and the sample is estimated to be $40{\mu}m$.

• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.10
• /
• pp.1153-1158
• /
• 2011

Roll-to-roll process is an emerging mass production method for printed and flexible electronics such as touch screen panel, RFID tag, thin film solar cell, and flexible display due to its high throughput. High precision in printing and coating is required to apply functional materials onto substrate. For such reason, every part of the roll-to-roll equipment needs to be precisely fabricated and to retain its precision under regular operation. In this article, the precision of cantilever type idler roller and a novel method to mitigate its deflection under web tension loading are discussed and the method is verified using both the numerical and the experimental works. The proposed method improves the structural rigidity of cantilever type roller whose advantages, such as low capital cost and high web path configurability, are maintained.

• Laser Solutions
• /
• v.14 no.3
• /
• pp.7-11
• /
• 2011

As an active emission display using emissive polymer has had much attention recently, needs for a selective patterning of emissive layer for those displays have been increased abruptly. Therefore, the various laser sources in terms of its wavelength has been used for laser direct patterning. In this work, the feasibility of those processes is examined using numerical analysis and the experimental investigation. A sample has multi-layered structure, emissive polymer on aluminum which is deposited on a glass substrate. Key factors for optimizing the laser patterning of the emissive polymer are considered into the control of ablation products, large-sized particle, and the choice of the appropriate wavelength for minimizing the heat affected zone and the remnant layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.69-70
• /
• 2000

There are currently considerable interest in the applications of conjugated polymers, oligomers, and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study, pentacene thin-film transistors (TFTs) were fabricated on glass substrate. Aluminums were used for gate electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactive ion etching (R.I.E). Gold was used for the electrodes of source and drain. The active semiconductor pentacene layer was thermally evaporated in vacuum at a pressure of about $10^{-8}$ Torr and a deposition rate $0.3{\AA}/s$. The fabricated devices exhibited the field-effect mobility as large as 0.07 $cm^2/V.s$ and on/off current ratio as larger than $10^7$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.8
• /
• pp.451-454
• /
• 2000

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD usign $C_2H_2$ gas. Since the discovery of carbon nanotubes, growth of carbon nanotubes has been achieved by several methods such as laser vaporization, arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is important to flat panel display applications. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD. Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. In this paper, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density of catalytic particles reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and each nonotubes are grown in bundle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.2
• /
• pp.110-118
• /
• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.1
• /
• pp.26-32
• /
• 2003

Then-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) method on glass were measured to obtain the electrical parameters such as of I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. Then, devices were analyzed to obtain the reliability and appliability on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 5$\mu\textrm{m}$/2$\mu\textrm{m}$, 8$\mu\textrm{m}$, 30$\mu\textrm{m}$ devices of channel width/length, the field effect mobilities are 111, 116, 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus. the poly-Si TFT's used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate the display panel and peripheral circuit on a targe glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.2
• /
• pp.75-79
• /
• 2015

Ti was deposited on the Al substrate using DC magnetron sputtering with changing the $N_2$ gas for the possible application of a solar absorbing layer. $N_2$ gas ranged from 50 to 75 sccm was systematically applied in the 5 sccm interval and the variation of the absorption rate was investigated. Microstructural examination and elemental analysis indicate that Ti was reacted with $N_2$ gas and formed $TiNO_x$ compound. As compared with the film without any exposure of $N_2$ gas, absorption rate improved by more than 20%. Typically the average absorption of $TiNO_x$ fim with 65% of $N_2$ gas was about 99% in the visible range, and the average absorption was more than 90% in the infrared absorption region respectively.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1352-1354
• /
• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• Polymer(Korea)
• /
• v.36 no.5
• /
• pp.662-667
• /
• 2012

Poly(ethylene terephthalate) (PET) base films with high light transmittance have been used for the substrate of various functional films in the flat panel display. The effects of the reflective index of coated films, the roughness of the film surface and the content of inorganic silica particles on the light transmittance were studied in this article. Light transmittance was increased by coating a water soluble resin with a low reflective index at an optimum thickness. The roughness of the film did not affect light transmittance when the Ra of the film surface was less than a quarter of the wavelength of incident light. Inorganic silica particles decreased light transmittance due to their absorbance and scattering of the incident light.