• 제목/요약/키워드: display

검색결과 16,085건 처리시간 0.04초

Fabrication of simple bi-layered structure red and green PHOLEDs

  • Jeon, Woo-Sik;Park, Tae-Jin;Kwon, Jang-Hyuk;Pode, Ramchandra;Ahn, Jeung-Sun
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.34-36
    • /
    • 2008
  • Highly efficient red and green phosphorescent devices comprising a simple bilayer structure are reported. The driving voltage to reach $1000\;cd/m^2$ is 4.5 V in $Bebq_2:\;Ir(piq)_3$ red phosphorescent device. Current and power efficiency values of 9.66 cd/A and 6.90 lm/W in this bi-layered simple structure PHOLEDs are obtained, respectively. While in $Bepp_2:Ir(ppy)_3$ green phosphorescent device, the operating voltage value of 3.3V and current and power efficiencies of 37.89 cd/A and 35.02 lm/W to obtain a luminance of $1000\;cd/m^2$ are noticed, respectively.

  • PDF

New Electrochromic Materials and Prevention of Cross-talk in Passive Matrix Electrochromic Display

  • Noh, Chang-Ho;Jang, Jae-Eun;Jung, Jae-Eun;Lee, Ji-Min;Jeon, Seog-Jin;Das, Rupasree Ragini;Han, Jai-Yong;Kim, Jong-Min;Son, Seung-Uk;Park, So-Youn;Moustafa, Walid S.A.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.891-894
    • /
    • 2008
  • Here we describe the new structured electrochromic(EC) materials to improve the three primary colors (RGB). We also report the simply isolated electrochromic unit cell using gel type electrolyte and show cross-talk' free driving of EC display device.

  • PDF

4" E-ink Active-matrix Displays based on Ink-jet Printed Organic Thin Film Transistors

  • Koo, Bon-Won;Kim, Do-Hwan;Moon, Hyun-Sik;Kim, Jung-Woo;Jung, Eun-Jeong;Kim, Joo-Young;Jin, Yong-Wan;Lee, Sang-Yun;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.1631-1633
    • /
    • 2008
  • We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

  • PDF

2.2" Digital driving AMOLED One-chip Solution for Mobile Application

  • Bae, Han-Jin;Kim, Seung-Tae;Lim, Ho-Min;Ha, Won-Kyu;Lee, Jae-Do;Kim, Ji-Hun;Kim, Hak-Su;Han, Chang-Wook;Tak, Yoon-Heung;Ahn, Byung-Chul
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.127-130
    • /
    • 2008
  • A 2.2" QVGA($320{\times}240$) 262,114 color AMOLED module has been developed using digital driving methodology. In this paper, we discuss the development of diver IC which is applied to Digital AMOLED module. Technologies for low cost IC structure and image quality enhancement are presented.

  • PDF

Improved Conductivity by Effective Wetting of Single Walled Carbon Nanotubes Film

  • Manivannan, S.;Ryu, Je-Hwang;Jeong, Il-Ok;Jang, Jin;Park, Kyu-Chang
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.1598-1601
    • /
    • 2008
  • We describe the fabrication of transparent conducting single-walled carbon nanotubes (SWCNTs) film on flexible substrate following the conventional spin coating method. The fabricated film was post treated with diluted acid solution and its electrical and optical characterizations were performed. The electrical conductivity of SWCNTs film was enhanced and the film was found to be attached strongly with substrate after the post treatment.

  • PDF

Amorphous Silicon Gate Driver with High Stability

  • Koo, Ja-Hun;Choi, Jae-Won;Kim, Young-Seoung;Kang, Moon-Hyo;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
    • /
    • pp.1271-1274
    • /
    • 2006
  • Integrated a-Si:H gate driver with high reliability has been designed and simulated. The proposed a-S:H gate driver has only one reset transistor under AC driving for P and output node. These reset transistors show much less degradation than those under DC driving. The simulation results show that the lifetime and response time are improved significantly compared with those of the prior circuit.

  • PDF

Selective Growth of Carbon Nanotubes and Its Electron Emission Properties

  • Ryu, Je-Hwang;Kim, Ki-Seo;Yu, Yi-Yin;Moon, Jong-Hyun;Park, Kyu-Chang;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
    • /
    • pp.1229-1232
    • /
    • 2006
  • We have grown well-aligned carbon nanotube arrays on the selective areas by plasma enhanced chemical vapor deposition at the substrate temperature of $580\;^{\circ}C$. The selective areas for CNTs growth can be defined by photo lithography technology. The CNTs are uniformly grown on the areas regardless of island diameters. Electron emission currents were measured in a vacuum with a diode structure at room temperature. Uniform electron emission currents were achieved with $40\;{\mu}m$ island spacing with $5{\mu}m$ island diameter.

  • PDF

New Cu Process and Short Channel TFT

  • Yang, J.Y.;Hong, G.S.;Kim, K.;Bang, J.H.;Ryu, W.S.;Kim, J.O.;Kang, Y.K.;Yang, M.S.;Kang, I.B.;Chung, I.J.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
    • /
    • pp.1189-1192
    • /
    • 2009
  • Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

  • PDF

The effect of plasma damage on electrical properties of amorphous GaInZnO film

  • Kim, Min-Kyu;Park, Jin-Seong;Jeong, Jae-Kyeong;Jeong, Jong-Han;Ahn, Tae-Kyung;Yang, Hui-Won;Lee, Hun-Jung;Chung, Hyun-Joong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
    • /
    • pp.640-643
    • /
    • 2007
  • The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.

  • PDF

PHUND (Portable Head Up Navigation Display) for a Motor vehicle

  • Shin, Sung-Chul;Hahn, Sang-Hoon;Chi, Yong-Seok;Ahn, Tae-Jeong;Choi, Ho-Young;Park, Tae-Soo;Kim, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
    • /
    • pp.421-424
    • /
    • 2007
  • We have succeeded in designing a PHUND (portable head up navigation display), which has a compact system with a MD panel and full color display device using RGB LED sources. The PHUND has been developed as an alternative to conventional built-in type HUD system targeting the high volume aftermarket with an affordable price.

  • PDF