• 제목/요약/키워드: dislocations

검색결과 408건 처리시간 0.025초

Crystal growth and characteristics of lysozyme crystals

  • Kojima, Kenichi
    • 한국결정학회:학술대회논문집
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    • 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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    • pp.3-3
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    • 2002
  • Many studies on crystal growth mechanisms of the hen egg-white lysozyme protein crystals have mainly performed by optical microscopy and atomic force microscopy (AFM). As results, two types of growth mechanisms, which are a two-dimensional nucleation mechanism and a spiral growth mechanism, were identified. However, there was no direct evidence of grown-in screw dislocations at the spiral sites. We first observed the screw dislocations in tetragonal lysozyme crystals using synchrotron X-ray topography. In addition, to confirm the characteristics of dislocations, we have observed some elastic constants in lysozyme crystals in terms of the sound velocity measurement by pulse echo methods. Tetragonal hen egg-white lysozyme crystals were grown by the concentration gradient method. The crystals were grown in test tubes, with an inner diameter of 8 ㎜ and 80 ㎜ in length, held vertically. The test tubes were kept at 23C for 2 weeks. The maximum size of crystals were 3×3×4 ㎟. The high quality crystals were examined by Laue topography with a water filter using synchrotron radiation. Figure is a X-ray topograph. Several straight screw dislocations were observed. We also determined Burgers vector to be a [110] direction. The measurement of sound velocity was performed by the digital signal processing method. the crystals were placed in stainless steel vessel, which was filled with lysozyme solution used for crystal growth. We observed the longitudinal sound velocity along the [110] direction in the tetragonal is obtained to be 1817 ㎧. Therefore, Young modulus and shear modulus were evaluated to be 2.70 Gpa and 1.02 Gpa, respectively, if we assumed Poisson ratio is 0.33. These results will be discussed at the meeting.

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A Study on the Creep Strength of L12 and B2-ordered Intermetallics

  • Han, Seung-Oh;Han, Chang-Suk
    • 대한금속재료학회지
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    • 제48권12호
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    • pp.1070-1077
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    • 2010
  • The creep rates of polycrystalline $L1_2$-ordered $Co_3Ti$ and B2-ordered NiAl-Hf intermetallics decrease appreciably with the fine precipitation of the coherent disordered fcc Co-rich phase and $Ni_2AlHf$ phase. With B2-ordered NiAl containing $L2_1-Ni_2AlHf$ precipitates, transmission electron microscope observations of the interaction between dislocations and spherical precipitates revealed that the dislocations tend to be strongly attracted to the particle interfaces during the creep deformation. On the other hand, with $L1_2$-ordered $Co_3Ti$, the significance of the threshold stress is discussed based upon the transmission electron microscope observations of the interaction between dislocations and precipitates. The superdislocations produced during deformation tend to be strongly attracted and dissociated as they meet the coherent disordered precipitates because the anti-phase boundary energy in the disordered phase was zero. An extra force required to pull the dislocations out of the disordered particles during the creep deformation establishes the threshold stress which is beneficial for improving creep strength under lower stresses.

A modified shell-joint model for segmental tunnel dislocations under differential settlement

  • Jianguo Liu;Xiaohui Zhang;Yuyin Jin;Wenyuan Wang
    • Geomechanics and Engineering
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    • 제35권4호
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    • pp.411-424
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    • 2023
  • Reasonable estimates of tunnel lining dislocations in the operation stage, especially under longitudinal differential settlement, are important for the design of waterproof gaskets. In this paper, a modified shell-joint model is proposed to calculate shield tunnel dislocations under longitudinal differential settlement, with the ability to consider the nonlinear shear stiffness of the joint. In the case of shell elements in the model, an elastoplastic damage constitutive model was adopted to describe the nonlinear stress-strain relationship of concrete. After verifying its applicability and correctness against a full-scale tunnel test and a joint shear test, the proposed model was used to analyze the dislocation behaviors of a shield tunnel in Shanghai Metro Line 2 under longitudinal differential settlement. Based on the results, when the tunnel structure is solely subjected to water-earth load, circumferential and longitudinal joint dislocations are all less than 0.1 mm. When the tunnel suffers longitudinal differential settlement and the curvature radius of the differential settlement is less than 300 m, although maximum longitudinal joint dislocation is still less than 0.1 mm, the maximum circumferential joint dislocation is approximately 10.3 mm, which leads to leakage and damage of the tunnel structure. However, with concavo-convex tenons applied to circumferential joints, the maximum dislocation value reduces to 4.5 mm.

고효율 LED 제작을 위한 비,반극성 GaN의 성장 및 결함 분석

  • 공보현;김동찬;김영이;안철현;배영숙;우창호;서동규;남옥현;유근호;장종진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.172-172
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    • 2009
  • In this study, we presented comparative discrimination methods to identify various line and planar defects observed in nonpolar a-GaN epilayers on r-sapphire substrates. Unlike the case of conventional c-GaN, which is dominated by perfect threading dislocations, systematic identification of undistinguishable defects using transmission electron microscopy (TEM) is necessary to suppress the propagation of defects in nonpolar GaN epilayers. Cross-sectional TEM images near the [0001] zone axis revealed that perfect mixed and pure screw type dislocations are visible, while pure edge, partial dislocations, and basal stacking faults (BSFs) are not discernible. In tilted cross-sectional TEM images along the [$1\bar{2}10$] zone axis, the dominant defects were BSFs and partial dislocations for the $g=10\bar{1}0$ and 0002 two-beam images, respectively. From plan view TEM images taken along the [$11\bar{2}0$] axis, it was found that the dominantpartial and perfect dislocations were Frank-Shockley with b=${\pm}1/6$<$20\bar{2}3$> and mixed type without an 1 component including b=${\pm}1/3$<$1\bar{2}10$> and ${\pm}1/3$<$\bar{2}110$>, respectively. Prismatic stacking faults were observed as inclined line contrast near the [0001] zone axis and were visible as band contrast in the two-beam images along the [$1\bar{2}10$] and [$11\bar{2}0$] zone axes.

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거골 경부 골절 및 탈구의 수술적 치료 후 발생한 무혈성 괴사 (Avascular Necrosis after Operative Treatment for Fracture and Dislocations of the Talar Neck)

  • 공일규;서형연;이근배
    • 대한족부족관절학회지
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    • 제12권2호
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    • pp.163-167
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    • 2008
  • Purpose: To evaluate the incidence of avascular necrosis (AVN), prognostic reliability of the Hawkins sign, and clinical outcomes after operative treatment of fracture and dislocations of the talar neck. Materials and Methods: We analysed 16 patients with fracture and dislocations of the talar neck which were treated by open reduction and internal fixation and followed up for more than 2 years. The postoperative radiographs were examined for Hawkins sign and avascular necrosis was confirmed by bone scan. The assessment of clinical results was based on the Hawkins scoring system. Results: AVN was occurred in 2 of 16 cases (12.5%) only in type III. Hawkins sign was found 11 of 16 cases (68.8%), which included 8 cases in type II, 2 cases in type III and 1 case in type IV. The Hawkins sign was not observed in two cases with AVN. In contrast, only 2 of the 5 cases with a negative Hawkins sign developed AVN. According to Hawkins scoring system, 4 patients (25.0%) was in excellent, 7 patients (43.8%) in good, 4 patients (25.0%) in fair and 1 patient (6.3%) in poor. Conclusion: Incidence of AVN after operative treatment of fracture and dislocations of the talar neck was lower than that of previous reports. Hawkins sign had a high prognostic reliability, but absence of Hawkins' sign should not be considered a totally reliable indicator of development of avascular necrosis.

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투과전자현미경 조사에 의한 사파이어 $({\alpha}-Al_2O_3)$합성 결정내의 결함특성 분석 (Characterization of Defects in a Synthesized Crystal of Sapphire $({\alpha}-Al_2O_3)$ by TEM)

  • 김황수;송세안
    • Applied Microscopy
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    • 제36권3호
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    • pp.155-163
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    • 2006
  • 합성 사파이어 기판 시료-GaN반도체의 성장기판으로 사용된-의 내재하는 결함 형태를 전통적인 투과식 전자현미경 조사기법 (TEM), LACBED, HAADF-STEM 방법으로 관찰 분석하였다. 이 시료에서 주로 발견된 결함들은 두께 ${\sim}2nm$에서 32nm를 가진(0001)면 미소 쌍정(basal microtwins), 모체 결정과의 계면 주위의 변형 결함, (0001)면 전위결함(basal dislocations), 그리고 {$2\bar{1}\bar{1}3$} 피라미드 미끄럼면 중 한 면에서 일어나는 복잡한 형태의 전위 결함들이다 이들(0001)면 및 {$2\bar{1}\bar{1}3$}면에 전위 결함들은 미소 쌍정과 강하게 관련되어 일어나는 것으로 보인다. 또한 전위결함 밀도는 매우 균일하지 않으며 수 ${\mu}m$의 크기의 결함 밀집 영역에서는 그 밀도가 ${\sim}10^{10}/cm^2정도만큼 높지만 시료 전체에서의 평균은 대체적으로 ${\sim}10^5/cm^2보다 작다. 이 값은 보통 합성되는 결정에서 평균적으로 예상되는 수치이다.

Al-Cu-Mg 합금에 있어서의 2차 결함조직 (The Secondary Defect Structure in Al-Cu-Mg Alloy)

  • 조현기;우기도
    • Applied Microscopy
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    • 제16권2호
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    • pp.14-24
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    • 1986
  • The interrelation of secondary defects, intermediate S' phase and aging condition in Al-2.0 wt% Cu-1.1 wt% Mg alloy is studied by transmission electron microscope. The results obtained in this study are as follows. 1. High density of dislocation loops, helices and stacking faults are observed in this specimen with aging treatment. 2. The number of dislocation loops and the width of loop free zone (LFZ) are increased with aging time. 3. The intermediate S' phase precipitates and grows on the dislocations and secondary defects. 4. The misfit dislocations are formed around intermediate S' phase. 5. It is thought that the helices appear to be produced by the climb of screw dislocations, while the dislocation loops appear to be formed both by condensation of vacancies into collapsed discs and by interaction of helices with screw of opposite sign.

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Transmission Electron Microscopy Study of Stacking Fault Pyramids Formed in Multiple Oxygen Implanted Silicon-on-Insulator Material

  • Park, Ju-Cheol;Lee, June-Dong;Krause, Steve J.
    • Applied Microscopy
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    • 제42권3호
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    • pp.151-157
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    • 2012
  • The microstructure of various shapes of stacking fault pyramids (SFPs) formed in multiple implant/anneal Separation by Implanted Oxygen (SIMOX) material were investigated by plan-view and cross-sectional transmission electron microscopy. In the multiple implant/anneal SIMOX, the defects in the top silicon layer are confined at the interface of the buried oxide layer at a density of ${\sim}10^6\;cm^{-2}$. The dominant defects are perfect and imperfect SFPs. The perfect SFPs were formed by the expansion and interaction of four dissociated dislocations on the {111} pyramidal planes. The imperfect SFPs show various shapes of SFPs, including I-, L-, and Y-shapes. The shape of imperfect SFPs may depend on the number of dissociated dislocations bounded to the top of the pyramid and the interaction of Shockley partial dislocations at each edge of {111} pyramidal planes.

오스테나이트계 25Cr-20Ni 스테인리스강의 고온 예변형에 의한 크리프 거동 (Creep Behavior of High Temperature Prestrain in Austenitic 25Cr-20Ni Stainless Steels)

  • 박인덕;남기우;안석환
    • 한국해양공학회지
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    • 제16권3호
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    • pp.59-64
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    • 2002
  • In the present study, we examined the influence of prestrain on creep strength of Class M alloy(STS310S) and Class A(STS310J1TB) alloys containing precipitates. Prestrain was given by prior creep at a higher stress than the following creep stresses. Creep behaviour before and after stress change and creep rate of pre-strained specimens were compared with that of virgin specimens. Pre-straining produced the strain region where the strain rate was lower than that of a virgin specimen both for STS310J1TB and STS310S steels. The reason for this phenomenon was ascribable to the viscous motion of dislocations, the interaction between dislocations and precipitates in a STS310J1TB steel, and the interaction of dislocations with sub-boundaries in a STS310S steen which has the higher dislocation density and smaller subgrain size resulted from pre-straining at higher stress.

전위 및 공공을 고려한 고변형률 변형에 대한 재료 시뮬레이션 (A Material Simulation of High-Strain-Rate Deformation with Dislocations and Vacancies)

  • 최덕기;유한규
    • 대한기계학회논문집A
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    • 제28권9호
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    • pp.1306-1313
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    • 2004
  • This paper addresses a theoretical approach to calculate the amount of the stored energy during high strain-rate deformations using atomistic level simulation. The dynamic behavior of materials at high strain-rate deformation are of great interest. At high strain-rates deformations, materials generate heat due to plastic work and the temperature rise can be significant, affecting various properties of the material. It is well known that a small percent of the energy input is stored in the material, and most of input energy is converted into heat. However, microscopic analysis has not been completed without construction of a material model, which can simulate the movement of dislocations and vacancies. A major cause of the temperature rise within materials is traditionally credited to dislocations, vacancies and other defects. In this study, an atomistic material model for FCC such as copper is used to calculate the stored energy.