• Corrosion Science and Technology
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• v.8 no.3
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• pp.93-102
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• 2009

The direct-current electroetching of high purity aluminum in hot aqueous-chloride solution produces a high density of micrometer-wide tunnels whose walls are made up of the {100} planes and penetrate aluminum in the <100> directions at rates of micrometer per second. In the process of the alternating-current pitting of aluminum, cathodic polarization plays an important role in the nucleation and growth of the pits during the subsequent polarization. The direct-current tunnel etching and alternating-current etching of aluminum are basically related to the formation of poorly crystallized or amorphous passive films. If the passive film forms on the wall, a natural misfit exists between the film and the aluminum substrate, which in turn gives rise to stress in both the film and the substrate. Even though the amorphous films do not have directed properties, their stresses are influenced by the substrate orientation. The films on elastically soft substrate are likely to be less stressed and more stable than those on elastically hard substrate. The hardest and softest planes of aluminum are the {111} and {100} planes, respectively. Therefore, the films on the {111} substrates are most likely to be attacked, and those on the {100} substrates are least likely to be attacked. For the tunnel etching, it follows that the tunnel walls tend to consist of the {100} planes. Meanwhile, the tunnel tip, where active corrosion takes place, tend to be made of four closely packed {111} planes in order to minimize the surface energy, which gives rise to the <100> tunnel etching.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.768-773
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• 2005

We present an overview of our new method of liquid crystal (LC) alignment based on the anisotropic etching of the alignment layers with a directed plasma flux. The method is realized by the use of anode layer source of "race track" geometry generating two "sheets" of accelerated plasma. These sheets are directed obliquely to the treated substrates. The static and dynamic irradiation regimes have been explored. The optimized processing conditions and materials are discussed. The technique yields an excellent uniformity of liquid crystal alignment of planar, tilted and vertical types. It is shown that the new method can be easily adapted for the alignment treatment of large area substrates used in the modern LCD manufacturing process.

• Restorative Dentistry and Endodontics
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• v.12 no.2
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• pp.45-53
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• 1987

The purpose of this study was to evaluate the tensile bond strength between composite resin and the human enamel. Three composite resin systems, two chemical (Clearfil Posterior, and Clearfil Posterior-3) and one light cure (Photo Clearfil-A), used with and without an intermediate resin (clearfil bonding agent), were evaluated under different amounts of load (10g, 200g and 200g for a moment) for in vitro tensile bond strength to acid-eched human enamel. Clinically intact buccal or lingual surfaces of 144 freshly extracted human permanent molars, embedded in acrylic were flattened with No #600 carborundum discs. Samples were randomly assigned to the different materials and treatments using a table of random numbers. Eight samples were thus prepared for each group(Table 2) these surfaces were etched with an acid etchant (Kurarey Co. Japan) in a mode of etching for 30 seconds, washing for 15 seconds, and drying for 30-seconds. During the polymerization of composite resin on the acid-etched enamel surfaces with and without bonding agent 10-gram, 200 gram and temporary 200 gram of load were applied. The specimens were stored in 50% relation humidity at $37^{\circ}C$ for 24 hours before testing. An universal Testing machine (Intesco model No. 2010, Tokyo, Japan) was used to apply tensile loads in the vertical directed (fig 5), and the force required for separation was recorded with a cross head speed of 0.25 mm/min and 20 kg in full scale. The results were as follow: 1. The tensile bond strength was much greater in applying a bonding agent than in not doing that. 2. The tensile bond strength of chemical cure composite resin was higher than that of light cure composite resin with applying on bonding agent on the acid-etched enamel. 3. In case of not applying a bonding agents on the acid-etching enamel, the highest tensile bond strength under 200 gram of load was measured in light cure composite resin. 4. The tensile bond strength under 200-gram of load has no relation with applying the bonding agent. 5. Under the load of 10-gram, There was significant difference in tensile bond strength as applying the bonding agent.