• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 학술대회 논문집 전문대학교육위원
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Membrane and Water Treatment
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• 제7권1호
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• pp.71-86
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• 2016

The present study deals with a numerical simulation for the transport phenomena in three configurations of Membrane Distillation (Air Gap, Direct Contact and Sweeping Gas Membrane Distillation) usually used for desalination in order to make an objective comparison between them under the same operating conditions. The models are based on the conservation equations for the mass, momentum, energy and species within the feed saline and cooling solutions as well as on the mass and energy balances on the membrane sides. The theoretical model was validated with available data and was found in good agreement. DCMD configuration provided the highest pure water production while SGMD shows the highest thermal efficiency. Process parameters' impact on each configuration are also presented and discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.125.1-125.1
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• 2016

The excitonic insulator (EI), which is one of fundamental insulators, was theoretically proposed in 1967 but its material realization has not been established well. Only a few materials were proposed as EIs but their experimental evidences were indirect such as the renormalization of band dispersions or an anomaly in electrical resistivity. We conducted scanning tunneling microscopy / spectroscopy measurements and found out that $Ta_2$ $NiSe_5$, which was the most recently proposed as an EI, had a metal-insulator phase transition with the energy gap of 700 meV at 78 K. Moreover, the spatially delocalized excitonic energy level was observed within the energy gap, which could be the direct evidence of the EI ground state. Our theoretical model calculation with the order parameter of 150 meV reproduces the spectral function and the excitonic energy gap very well. In addition, experimental data shows that the band character is inverted at the valence and conduction band edges by the exciton formation, indicating that the mechanism of exciton condensation is similar to the Bardeen-Cooper-Schrieffer (BCS) mechanism of cooper pairs in superconductors.

• Coupled systems mechanics
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• 제5권4호
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• pp.305-314
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• 2016

We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.

• 한국세라믹학회지
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• 제40권3호
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.239-241
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• 1996

The energy gap of GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displaced a direct energy gap at 1.79 eV and an indirect energy gap at 1.62 eV at $300^{\circ}K$ with the addition of Erbium. Also, an impurity optical absorption peak was found to have occurred at $6505\;cm^{-1}$. The peak identified the origin of the electronic transitions between the energy levels of $Er^{3+}$ ions when the addition of dopant.

• 대한전자공학회논문지SD
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• 제38권5호
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• pp.338-346
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• 2001

온도에 따른 반도체 에너지갭의 변화를 디지털 영상처리를 이용해 직접 측정하는 적외선 영상기법을 제안하고 있다. 본 방법은 반도체 에너지갭의 온도계수를 경제적이고 간단하게 평가할 수 있도록 한다. 본 기법의 핵심 구성 부품은 다색광원기(Polychromator), 프레임 그래버가 내장된 컴퓨터 및 가변 온도 저온유지장치(Cryostat)이다. 방법의 타당성을 검증하기 위해 LEC 방법으로 제조한 GaAs에 시험적으로 행한 실험은 온도 계수가 이론 모델에서 구한 값과 전반적으로 잘 일치함을 보여 주었다.