• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.27 no.2
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• pp.49-61
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• 1997

The purpose of this study was to compare E-speed film, CDR, and modified CDR images by means of observing some artificial defects of alveolar bone wall in the sound human dried mandibles. High diagnostic accuracy was shown in 1 wall and 4 wall defects by all 5 observers (2 Radiologists, 2 Periodontists, 1 General practitioner), but the diagnosis in 2 wall and 3 wall defects was inaccurate. Modified CDR images had the more diagnostic accuracy than E-speed film and CDR images, but there was no statistical difference among them. Finally, radiologist used modified CDR images more than others and used equalization effect more than the change in contrast and/or brightness.

• The Journal of the Korean dental association
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• v.55 no.8
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• pp.516-526
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• 2017

Objective: To suggest diagnostic reference levels (DRLs) for dental panoramic radiography in adults and children through the nationwide survey in Korea. Materials and Methods: Two hundred twelve dental institutions on a national basis were visited. The radiographic examination protocols were surveyed and their patient doses at the clinical exposure setting for adult and children (5- and 10-year old) were measured at 244 panoramic radiographic equipment. The measured DAP were analyzed and compared according to age group, the size of hospital, the type of radiographic system, the installation duration of equipment. Results: The mean exposure parameters were 70.1 kV, 9.2 mA, 14.4 second for adult and 66.6 kV, 7.9 mA, 13.8 second for 10-year old child and 65.5 kV, 7.3 mA, 13.7 second for 5-year old child. The mean and third quartile patient DAPs were $138.3mGy\;cm^2$ and $151.0mGy\;cm^2$ for adult, $99.5mGy\;cm^2$ and $104.8mGy\;cm^2$ for 10-year old child and $89.5mGy\;cm^2$ and $95.5mGy\;cm^2$ for 5-year old child. The mean patient dose at the university dental hospital was lower than that at the dental clinic (p<0.05). The mean patient dose of direct digital radiography type was higher than that of film-based type. However, the difference did not show statistically significance. Conclusion: DRLs for dental panoramic radiography in adult, 10- and 5-year old child were suggested to be $151mGy\;cm^2$, $105mGy\;cm^2$, and $96mGy\;cm^2$ in Korea based on this nationwide survey.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Korean Journal of Digital Imaging in Medicine
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• v.5 no.1
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• pp.64-77
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• 2002

DR has had an important fact not only in the department of radiology but also in productivity or work efficiency of a whole hospital. The environment of DR has more various parameter than CR, so it is able to supply high quality of medical services. The current environment of radiology department in each hospital has been changed from Film-Screen system to DR through Full-PACS. This hospital which uses Full-PACS became to study the proper condition of CR and DDR and how the image quality of them is expressed among general photographing systems in the DR environment. From this experiment, the image quality of DDR is better than CR under the same exposure condition. And in the DDR system, the score of image which uses AEC is a little higher than the score which doesn't use it. Especially it can be known that the function of AEC of DDR is useful to improve the image quality in the part of skull and chest. (The function of AEC : It is the tool that detects the ionized current of x-ray which goes through objects with using the ion chamber which is in the detector. Also it controls the examination of X-ray when the proper density is reached.) Because the proper degree of density can be represented by this system, the photographing can be taken much easily without consideration of the exposure condition with the thickness of various objects. From the result of this experiment, it can be known that the selection of proper exposure condition plays an important rule to gain good Image Quality. More researches will be necessary about DDR system which has potential ability in the future.

• Journal of the Korean Society of Radiology
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• v.3 no.3
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• pp.27-35
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• 2009

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.97-101
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• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.424-427
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• 2002

In this papaer, there is a basic research for the development of the Hybrid digital radiation detector with a new system, make up for existing digital radiation detector of direct/indirect method with a weak point. for enhance the efficiency characteristics of signal response from X-ray detector using the a-Se, We make sample with various kinds of layer, through the ratio of As(0.l%,0.3%,0.5%,1%,1.5%,5%,10%). We measure net charge with a leakage current and photo current for electric charateristics. Ratio of As in a-Se consist of 7 stage, It made of using the thermal deposition system, In the made of samples, we made multi layer using the EFIRON optical adhesives from phosphor layer consist of Oxybromide$(BrO_2)$. As a result of X-ray measurement, the best result is ; leakage current(0.30nA/cm2), net charge(610.13pC/cm2/mR) when the condition is voltage(9V/um), 0.3% ratio of As in multi layer(BrO2 + a-Se)

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.